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Strength of silicon containing nanoscale flaws

Published online by Cambridge University Press:  03 March 2011

Antonia Pajares ,
Marina Chumakov  and
Brian R. Lawn
Antonia Pajares
Affiliation:
Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8500
Marina Chumakov
Affiliation:
Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8500
Brian R. Lawn*
Affiliation:
Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8500
*
c) Address all correspondence to this author. e-mail: brian.lawn@nist.gov
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Abstract

Silicon is a principal material in submicrometer-scale devices. Components in such devices are subject to intense local stress concentrations from nanoscale contacts during function. Questions arise as to the fundamental nature and extent of any strength-degrading damage incurred at such contacts on otherwise pristine surfaces. Here, a simple bilayer test procedure is adapted to probe the strengths of selected areas of silicon surfaces after nanoindentation with a Berkovich diamond. Analogous tests on silicate glass surfaces are used as a control. The strengths increase with diminishing contact penetration in both materials, even below thresholds for visible cracking at the impression corners. However, the strength levels in the subthreshold region are much lower in the silicon, indicating exceptionally high brittleness and vulnerability to small-scale damage in this material. The results have important implications in the design of devices with silicon components.

Keywords

FractureSemiconductorMicroindentation
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 2 , February 2004 , pp. 657 - 660
Copyright
Copyright © Materials Research Society 2004

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