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Structure and Composition of Metal-Doped HfO2 Gate Oxides in CMOS Devices Studied by High Resolution STEM and EELS

Published online by Cambridge University Press:  01 August 2010

J Bruley ,
MM Frank ,
V Narayanan ,
B Mendis  and
M Gass
J Bruley
Affiliation:
IBM
MM Frank
Affiliation:
IBM
V Narayanan
Affiliation:
IBM
B Mendis
Affiliation:
Daresbury Laboratory, United Kingdom
M Gass
Affiliation:
Daresbury Laboratory, United Kingdom

Extract

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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Type
Abstract
Information
Microscopy and Microanalysis , Volume 16 , Supplement S2 , July 2010 , pp. 1892 - 1893
Copyright
Copyright © Microscopy Society of America 2010