Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-15T07:09:59.080Z Has data issue: false hasContentIssue false
  • English
  • Français

Materials Interactions in the Firing of Copper Thick Film Multilayer Ceramics

Published online by Cambridge University Press:  21 February 2011

William Borland  and
Vincent P. Siuta
William Borland
Affiliation:
E. I. Du Pont De Nemours &; Co., Inc., Electronics Department, Wilmington, De 19898
Vincent P. Siuta
Affiliation:
E. I. Du Pont De Nemours &; Co., Inc., Electronics Department, Wilmington, De 19898
Get access

Abstract

In recent years, copper thick film materials have gained rapid acceptance in ceramic multilayer interconnect boards because of their ability to meet advanced packaging requirements at reasonable cost. With high volume production, however, problems such as opens, shorts, blisters and porosity have been experienced. Many of these failures may be attributed to undesirable materials interactions caused by reducing conditions which can be caused by incomplete burnout of thick film organics during firing.

This paper considers the interactions in current copper thick film material systems. Primary emphasis will be placed on chemical interactions that occur in both ideal and non-ideal conditions during firing. Failure modes will be related to chemistry and processing. New systems designed to overcome processing sensitivity will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 108 , 1987 , 287
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Brown, W. P. and Tipper, C. F. H., J. Appl. Polymer Sci. 22, 1459–1468, (1978).Google Scholar
2.Kingery, W. D., Bowen, H. K. and Uhlmann, D. R., Introduction to Ceramics, 2nd edition. John Wiley & Sons, Inc., New York (1960, 1976), p. 492.Google Scholar
3.Bacher, R. J. and Siuta, V. P., in Proc. 36th Electronic Components Conf. (IEEE. New York, 1986).Google Scholar
4.Larry, J. R.. Rosenberg, R. M., and Uhler, R. O., IEEE Trans. CHMT–3 (2). 211–225 (1980).Google Scholar
5.Vest, R. W., Ceramic Bulletin 65 (4), 631–636 (1986).Google Scholar
6.Holmes, P. J. and Loasby, R. G., Handbook of Thick Film Technology, (Electrochemical Publications, Ltd., Glasgow, 1976).Google Scholar
7.Loasby, R. G.. Davey, N. and Borlow, H., Solid State Technology, May 1972.Google Scholar
8.Vest, R. W., “The Physical Chemistry of Copper Thick Film Firing”. ISHM Symposium, Dallas, TX, 1984.Google Scholar
9.Button, D. P. and Siuta, V. P., “Copper Interactions in Thick Film Ceramics: Dielectric Blushing and Performance”. Proc. of the Materials Research Society Symposium: Electronic Packaging Materials Science, V. 72, Ed. by Jackson, K. A., Materials Research Soc., Pittsburgh, PA, 1986.Google Scholar
10.Toch, P. L.. Goodrick, J. and Shaw, B. A. in Proc. 36th Electronic Component Conf. (IEEE, New York, 1986)Google Scholar
11.Honig, R. E., “Vapour Pressure Data for the More Common Elements”, RCA Review, Vol.18. No. 2, pp 195–204, June, 1957.Google Scholar
12.Langmuir, Phys. Rev., Vol.8, 149 (1916).Google Scholar
13.Voce, E. and Hallowes, A. P. C., “The Mechanism of Embrittlement of Deoxidized Copper by Bismuth”, J. Inst. Metals, Vol.73, pp 323–376, 1947.Google Scholar
14.Schneider, M., Hughes Aircraft, Unpublished work.Google Scholar
15.Lund, R., “Circuit Shorting Mechanisms in Copper Multilayer Systems”, Proc. International Symposium on Microelectronics. ISHM Conference, Anaheim. CA, November 11–14, pp 463–471, 1985.Google Scholar
16.Pitkanen, D. E., Cummings, J. P. and Sortell, J. A., “Compatibility of Copper/Dielectric Thick Film Materials”. Proc. 1979 ISHM Symposium, Los Angeles. CA. pp 148–156.Google Scholar
17.Needes, C. R. S. and Travis, A. R., “The Processing of Thick Film Copper Multilayer Materials in a Fast Firing Furnace”, Proc. International Symposium on Microelectronics, ISHM Conference, Anaheim, CA, November 11–14, pp. 454–462, 1985.Google Scholar
18.Hayduk, E. A. and Adams, B. M., Proc. 1987 ISHM Conference, p. 569.Google Scholar