We report static and time-resolved terahertz (THz) conductivity measurements of a highperformance thermoelectric material containing tellurium nanowires in a PEDOT:PSS matrix. Composites were made with and without sulfur passivation of the nanowires surfaces. The material with sulfur linkers (TeNW/PD-S) is less conductive but has a longer carrier lifetime than the formulation without (TeNW/PD). We find real conductivities at f = 1THz of σTeNW/PD = 160 S/cm and σTeNW/PD-S = 5.1 S/cm. These values are much larger than the corresponding DC conductivities, suggesting DC conductivity is limited by structural defects. The free-carrier lifetime in the nanowires is controlled by recombination and trapping at the nanowire surfaces. We find surface recombination velocities in bare tellurium nanowires (22m/s) and TeNW/PD-S (40m/s) that are comparable to evaporated tellurium thin films. The surface recombination velocity in TeNW/PD (509m/s) is much larger, indicating a higher interface trap density.

Thermoelectric (TE) materials have been studied during past decades since they can generate electricity directly from waste heat. Antimony chalcogenides (Sb2M3, M = S, Se, Te) are well known as one of the promising candidates among the inorganic TE materials. We report on the synthesis of Sb2Te3 nanoparticle via thermolysis method. A systematic study was done to investigate the effect of reaction time and ratio between the precursors as well as the method of cooling on the morphology and composition of obtained nanoparticles. The ratio between precursors was varied to study the effect on the morphology. Furthermore, the high purity phase Sb2Te3 was obtained by a rapid cooling process.