English has an oblique predicative construction in which the prepositions for and as license an oblique predicative complement that is predicated of a noun phrase, as in We took her for a friend and I regarded her as a genius. The construction with for is the oldest, and is found in many other languages. This article traces the history of oblique predicative constructions involving for and as, and a number of other prepositions, from Old English to Present-Day English (PDE). Visser (1963–73) has suggested that predicative for and as were rivals, and that in PDE as is now dominant at the expense of for. I will argue instead that since around 1900 predicative for and as can clearly be distinguished semantically as expressing the meanings qua (‘as being’) and qualitate qua (‘in the capacity of’), respectively, and that the existence of these distinct meanings explains why constructions with both prepositions still survive in PDE.

The high-silica rhyolitic Joe Lott Tuff was erupted at 19.2 ± 0.4 Ma from the Mount Belknap caldera, SW Utah. Certain units in the tuff contain two species of wakefieldite, the Nd- and Y-dominant types. They occur in disseminated streaks and patches in association with rhodochrosite, calcite, Fe oxide, cerite-(Ce), and a Mn silicate (caryopilite?), thought to have been deposited from hydrothermal fluids. The wakefieldites contain the highest levels of As (≤15.34 wt.% As2O5) and P (≤5.7 wt.% P2O5) yet recorded in this mineral, indicating significant solid solution towards chernovite-(Y) and xenotime-(Y). Thorium levels are also unusually high (≤14.2 wt.% ThO2). The source of the hydrothermal fluid(s) is unknown but might be related to uranium mineralisation in the region, in that As, V and U are commonly associated in such deposits.

Arsenic (As) is highly toxic element, even at very low concentrations in feed and drinking water. Its physiological role in poultry is well established, as it is essential for the synthesis of methionine metabolites including cysteine, even though it is a teratogenic and carcinogenic element. Paradoxically, recent studies have uncovered its nutritional value. The recommended amounts of As in poultry feed are between 0.012 and 0.050 mg/kg. Water is the primary route for the transfer of As and exposure of animals to its toxic effects. The available data on the impact of water contamination on the deposition of As in broiler tissues are rather scarce. The amount of As was 0.006-0.015 mg/kg in breast meat, 0.007-0.017 mg/kg in drumstick meat, 0.001-0.014 mg/kg in liver and 0.008-0.016 mg/kg in testicles of broilers at the end of a 42 day experiment after exposure to naturally contaminated drinking water. The toxic dose of As for poultry is between 40 and 50 mg/kg of poultry feed whereas the amount of 40 mg/kg leads to decreased egg production and the amount of 50 mg/kg leads to decreased feed consumption. Symptoms of chronic As exposure differ among individuals, populations and geographic regions, which suggests that there is no universal definition of symptoms associated with chronic As poisoning. Moreover, some individuals can tolerate high As, that is, levels that can be fatal for others. In wild birds, the content of As was the highest in meat of march hens (0.063 mg/kg), seagull muscle tissue (0.058 mg/kg), in meat from swans (0.022 mg/kg) and the white-tailed eagle (0.022 mg/kg). In this review, the essential role and toxicity of As in poultry nutrition is addressed with particular emphasis on its importance as a contaminant of poultry feed and products.

Lead, zinc and arsenic mobilization/attenuation processes during interactions between smelter slag and water show differences depending on the origin of the slag. The studied samples, waste from ore and car-battery processing, were submitted to long-term (365 days) batch leaching at two different initial pH values. The leachate analyses were input to the EQ3NR speciation-solubility code to speciate the solutions and determine the degree of saturation with respect to different phases, and a mineralogical investigation was made of the newly formed phases. An ‘oxidizing’ scenario can be proposed for slag waste disposal, considering that cerussite (PbCO3) at pH >6 becomes a major solubility-controlling phase for Pb, and newly formed hydrous ferric oxides (HFO – common secondary phases under oxidizing conditions) efficiently adsorb As. No efficient scavenging mechanism was found for Zn, which was progressively leached from the slag and in particular from the ore-processing slag. Quenched glass-rich slag from old car-battery processing was found to release significant amounts of Pb, especially in acidic environments. Neither slag would therefore be suitable for recycling for civil engineering purposes. Conversely, extremely low releases of Pb, Zn and As were observed for recent car-battery processing slag, which could therefore be considered for road construction.

Several silicate-minerals, such as ardennite – Mn2+4MgAl5[Si5(As5+,V5+)O22](OH)6, Z = 2, tiragalloite – Mn2+4[Si3As5+O12(OH)], Z = 4 and medaite – Mn2+6[Si5(V5+,As5+)O18(OH)], Z = 4 possess (V5+,As5+,P5+)O4 tetrahedra. Using electron-microprobe analysis (EMPA) and single-crystal X-ray diffraction methods, the crystal chemistry of ardennite from Salam-Château, Belgium and the Vernetto mine, Italy, tiragalloite from the Gambatesa mine, Italy, and medaite from the Molinello mine, Italy and the Fianel mine, Switzerland, were studied. Structure refinements converged to R1 values of 2.10–5.67%. According to chemical analysis, the Σ(As+V+P) content increases with decreasing Si content. Thus, Si replaces pentavalent cations in tetrahedral coordination. The (As5+,V5+,P5+,Si4+)O4 tetrahedra are categorized by their connections to SiO4 tetrahedra. The (As5+,V5+,P5+,Si4+)O4 tetrahedron of ardennite is isolated, and those of tiragalloite and medaite terminate a tetrahedral chain. The <T–O> of the isolated (As5+,V5+,P5+,Si4+)O4 tetrahedron shows a positive correlation with the mean ionic radius. For (As5+,V5+,P5+,Si4+)O4 tetrahedra with one T–O–T link, <T–O> and mean ionic radius are also correlated. In addition, the longest bridging T–O bond occurs between (As,V,P,Si)O4 and the adjacent SiO4 tetrahedron. The bridging O atom is over-bonded to satisfy the charge requirement of Σ(As+V+Si).

Two sites with five wells in the Danube-Tisza interfluvial were studied in order to help understand the genesis of the high-As content of shallow ground water. Separation of As species was carried out in the field as it proved to be the best method by which to preserve the As species. Different geochemical environments could be separated by the speciation studies which correlate with the concentrations of oxyanion-forming elementss uch asV, Se, Mo, U and W.

Schäferite, NaCa2Mg2(V5+O4)3; palenzonaite, NaCa2Mn22+(V5+O4)3; berzeliite, NaCa2Mg2(As5+O4)3; and manganberzeliite, NaCa2Mn2+2(As5+O4)3, are cubic minerals with garnet structures (space group Iad) in which tetrahedrally coordinated V5+ and/or As5+ at the Z site are charge balanced by disordered Na+ and Ca2+ at the X site, and divalent Mg2+ and Mn2+ cations at the octahedrally coordinated Y site. The crystal chemistry of palenzonaite (from the Molinello and Gambatesa mines, Italy, and the Fianel mine, Switzerland), berzeliite (from Långban, Sweden, and Montaldo, Italy), and manganberzeliite (from Varenche, Italy, and the Gozaisho mine, Japan) were studied by electron microprobe analysis and single-crystal X-ray diffraction methods. Structure refinements converged to R1 values of 1.36–2.42%. The tetrahedral site in these garnet structures is mainly occupied by pentavalent As5+ or V5+ (only up to about 20% randomly distributed Si4+ is present). Charge balance is maintained by variations in the Ca/Na ratio at the X site. Heterovalent substitution (Na+ ↔ Ca2+) at the distorted square antiprism X site in vanadate- and arsenate-bearing garnets allows full occupancy of the octahedral Y site by divalent cations (primarily Mg2+ and Mn2+). There is a positive correlation between the <Z–O> and <Y–O> bond lengths and the mean ionic radii of the substituent elements, but there is no correlation between the <X–O> bond length and the variable Na/Ca site occupancy. The ionic radii of octahedrally coordinated Mg2+ and Mn2+ are such that the shared octahedral–dodecahedral edges are similar in length to the unshared octahedral edges, which is a measure of lattice distortion in garnet structures.

An experimental study of cadmium substitution into AgXS2 phases (X = As, Bi, Sb) indicates significant amounts of cadmium can be incorporated in the structure by the mechanism 2Cd ⇌ Ag + X. The limit of substitution of Cd in the high-temperature polymorph of miargyrite, β-AgSbS2 is 6.2 at.%, whereas the low-temperature polymorph, α-AgSbS2, can accommodate at least 12 at.% cadmium. Substitution of Cd into the cubic β-AgSbS2 induces a small monoclinic distortion and the unit cell becomes pseudo-cubic. The α ⇌ β transition in Cd-substituted miargyrites is modified by the solute ions, with both a reduction of Tc and transition smearing evident. Similar effects are also recorded in Cd-substituted AgAsS2 and AgBiS2.

The weathering and oxidation of mine tailings has the potential to contaminate water and soil with toxic elements. To understand the mechanisms, extent and products of the long-term weathering of complex Bolivian tailings from the Cerro Rico de Potosí, and their effects on As, Pb, P and Sb cycling, three-year long laboratory column experiments were carried out to model 20 years of dry- and wet-season conditions in the Pilcomayo basin. Chemical analysis of the leachate and column solids, optical mineralogy, X-ray diffraction, scanning electron microscopy, electron probe microanalysis, microscale X-ray absorption near edge structure spectroscopy, Bureau Commun de Référence sequential extraction and water-soluble chemical extractions, and speciation modelling have shown that the weathering of As-bearing pyrite and arsenopyrite, resulted in a loss of 13–29% of the original mass of As. By contrast, Pb and Sb showed much lower mass losses (0.1–1.1% and 0.6–1.9%, respectively) due to the formation of insoluble Pb- and Sb(V)-rich phases, which were stable at the low pH (~2) conditions that prevailed by the end of the experiment. The experiment also demonstrated a link between the cycling of As, Sb, and the oxidation of Fe(II)-bearing sphalerite, which acted as a nucleation point for an Fe-As-Sb-O phase. Phosphorus was relatively immobile in the tailings columns (up to 0.3% mass loss) but was more mobile in the soil-bearing columns (up to 10% mass loss), due to the formation of soluble P-bearing minerals or mobilization by organic matter. These results demonstrate the influence of mine tailings on the mobility of P from soils and on the potential contamination of ecosystems with As, and strongly suggest that these materials should be isolated from fluvial environments.

As the scaling of the device dimensions in CMOS devices runs into physical limitations, new materials beyond Si with high electron and hole mobilities such as Ge, SiGe, and III-V materials are introduced. Challenges of CMP for these materials are reviewed in this paper. First we discussed the challenge of the new integration schemes to CMP. Loading effects can result in different growth rates for varying feature sizes, which results in a critical dimension dependent overburden. This makes it more difficult to meet the targets of the CMP process with respect to oxide loss and Ge/SiGe/III-V dishing. Secondly we discuss the challenge for the reduction of the defects during CMP for these new materials. Finally the challenge that is relevant especially for the introduction of III-V materials is studied. During the polishing of III-V materials, toxic gases as well as III-V containing liquid waste will be created. The chemical mechanism of the waste control is discussed.

Arsenic is one of the most toxic elements that can be found. Arsenic is mainly emitted by the copper, lead and zinc production, in agriculture as pesticides and herbicides. Two forms of arsenic are common in natural waters: arsenite (AsO33−) and arseniate (AsO43−), referred to as As(III) and As(V). The nano-Mg/Al-hydrotalcites present ionic exchange and adsorbent capacities. In this work, the physic-chemical characterization of nano-Mg/Al-hydrotalcites and his arsenic removal capacityis described. The solids were synthesized by the sol-gel method with Mg/Al=2 and 3 ratio. The solids and their thermal treated products were characterized by XRD, FTIR, DTA, TGA and N2 adsorption. The solids were used as adsorbents As(III) in aqueous solutions. Adsorption isotherm studies of As(III) from aqueous solution are described. The adsorbent capacity was determined using the Langmuir, Freundlich and Dubinin–Radushkevich adsorption isotherm models. The As(III) adsorption isotherm data fit best to the isotherm Freundlich model. The maximum As(III) uptake capacity by nano-Mg/Al-hydrotalcites and the heated solids were determined using the Freundlich equation and were found to 547.46, 660.15, 799.88 and 739.12 mg As(III)/g HT-Mg/Al=2, HT-Mg/Al=3, HT-Mg/Al=2 at 350°C and HT-Mg/Al=3 at 350°C respectively. In the kinetic studies using 40 mg/L concentration of As(III) solutions was obtained an excellent removal capacity in contact times less at one minute.

Titanium dioxide has been extensively tested in environmental applications, especially in separation technologies. In the present study, anatase nanoparticles were synthesized by using a sol-gel method, and batch adsorption experiments were carried out to analyze arsenic removal capacity of the anatase nanoparticles from water. The maximum arsenic removal percentages were found ~ 84 % for As(III) at pH 8 and ~98% for As(V) at pH 3, respectively, when 5 g/l anatase nanoparticles were used at an initial arsenic concentration of 1 mg/l. The results of the sorption experiments, which take into consideration the effects of equilibrium concentration on adsorption capacity, were analyzed with two popular adsorption models, Langmuir and Freundlich models. From the comparison of R2 values, the adsorption isotherm for As(III) was fitted satisfactorily well to the Langmuir equation (R2 > 0.996) while the adsorption behavior of As(V) on anatase nanoparticles was described better with Freundlich equation (R2 > 0.991). This study proposes the potential adsorbent material for water which is contaminated with arsenic species.

We present the results of an electrical injection study of spin polarized electrons from ferromagnetic Fe contacts into electronic shells of self-assembled InAs quantum dots (QDs) incorporated in GaAs/AlGaAs spin LED structures. The circular polarization of the emitted light was measured as function of current and magnetic field. The polarization of the EL spectra exhibits strong maxima at energies that do not coincide with the electroluminescence (EL) intensity peaks. The magnetic field dependence of the polarization maxima is consistent with spin injection from the ferromagnetic Fe contacts. The experimental results are compared with calculated emission spectra from multi-exciton complexes (N = 2 and N = 6) as function of electron spin polarization. The energies of the EL features as well as their polarization characteristics are understood in terms of energy shifts due to exchange interactions between spin-down electrons occupying adjacent shells.

Considerable amount of works have been reported to achieve a high breakdown voltage of AlGaN/GaN heterostructure devices by employing additional process such as SiO2 passivation1,2, floating metal rings and Ni/Au Oxidation3. However, it should be point out that treatment of passivation layer of AlGaN/GaN heterostructure devices has been reported scarcely. As+ ion implantation on SiO2 passivation layer may be a simple and effective to reduce electric field strength to increase breakdown voltages. The cross-sectional view of the proposed AlGaN/GaN Schottky barrier diode is shown in Fig. 1. We fabricated conventional AlGaN/GaN Schottky barrier diode and passivated the device with SiO2 layer of 350 nm thick. Finally As+ ions were implanted on the SiO2 passivation layer. We measured the surface potential of the test samples with electric force microscopy (EFM) in order to verify that implanted As+ ions remained as positively charged ions in SiO2 layer after ion implantation. After ion implantation, 2 dimensional electron gas (2DEG) concentration was increased slightly from 8.28E12 /cm2 to 8.38E12 /cm2 so that the forward current was also increased slightly. Table shows the breakdown voltages of the SBDs before and after As+ ion implantation. After As+ 80 keV 1 × 1E14 atoms/cm2 implantation, the breakdown voltage increased considerably from 604 V to 1204 V due to the edge termination by implanted As+ ions. The reverse leakage current decreased from 80.3 uA/mm to 21.2 nA/mm due to the relaxation of electric field concentration by As+ ion implantation. We verified the electric field relaxation through 2D simulation. After As+ ion implantation, the depletion region curvature under the reverse biased condition became moderate so that the maximum electric field strength was decreased. As+ ion implantation method may be a simple and effective edge termination method for improving the breakdown voltage as well as the leakage current of the proposed AlGaN/GaN SBDs. Proposed AlGaN/GaN SBDs showed high breakdown voltage of 1204 V and low leakage current of 21.2 nA/mm without any considerable decrease of forward characteristics while that of conventional device was 604 V and 80.3 uA/mm, respectively.

The ion implantation steps used in fabricating field effect transistors in ultrathin (6 to 30 nm) silicon-on-insulator (UTSOI) substrates present many challenges. Deep source/drain (S/D) implants in UTSOI layers are a particular concern, since it can be difficult to implant the desired dose without amorphizing the entire SOI thickness. In a first study, we investigated the effect of implant temperature (20 to 300 °C) on the sheet resistance (Rs) of 28 nm thick SOI layers implanted with As+ at an energy of 50 keV and a dose of 3 × 1015 /cm2, and found Rs values after activation sharply lower for samples implanted at the highest temperature. In a second study, on 8 nm thick SOI layers implanted with As+ at an energy of 0.75 keV and doses in the range 0.5 to 2 × 1015/cm2, the benefits of the elevated implantation temperature were less clear. Explanations for these effects, supported by microscopy, medium energy ion scattering (MEIS), and optical reflectance data, will be discussed.

Two recent papers by Pei et al. and Steen et al. have shown that the observed pile-up of arsenic at Si/SiO2 interfaces surprisingly does not seem to involve point defects as a major factor, causes local distortions that strain the Si in the pile-up region locally, and that the segregated arsenic atoms are deep donors. In this paper, we use ab-initio modeling to study possible configurations for high As concentrations that may fulfill these criteria. We find for a simple model structure that As nearest neighbors become stable in Si in the vicinity of the interface. We also have stud-ied dopant deactivation using bulk-Si models. Even without invoking point defects explicitly and starting from a purely substitutional arrangement, we find that the energetically most favorable configurations are most stable in the neutral charge state, indicating that high enough concentra-tions of arsenic atoms make them electrically inactive and hence result in dopant dose loss.

We conducted molecular dynamics (MD) simulations of solid phase epitaxial growth of As-doped Si using a Tersoff potential characterized via comparison to DFT calculations, including energies of AsnV clusters. The Si:As systems were initialized by amorphizing the surface region of crystalline silicon via Si ion implantation and/or selective melting. The remaining crystalline region provides dual function of controlling temperature in system without perturbing regrowth and providing seed for recrystallization. After recrystallization, isolated As atoms occupy substitutional sites, with the average number of nearest neighbors for As changing from about 3.3 in amorphous Si to 4 after crystallization. We observe V incorporation associated with high As concentrations. A small fraction of isolated As atoms have associated vacancies, while vacancies are incorporated in the majority of cases in which there are sites with two As neighbors. These observations are consistent with our previous model developed to explain kinetics of As shallow junction formation which assumed V incorporation at sites with 2 or more As nearest neighbors to account for experimental data.

A systematic study is presented of the heteroepitaxial growth of B12As2 on m-plane 15R-SiC. In contrast to previous studies of B12As2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B12As2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1100)15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of IBA on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B12As2 epilayers.