The Oxide Dispersion Strengthened (ODS) materials are potential candidates as cladding tubes for Sodium-cooled Fast Reactors. The nano-oxides are finely dispersed within the grains and confer excellent mechanical properties to these alloys. Hence, assessing nano-particle stability under irradiation remains crucial to guarantee safe use of these materials. Although neutron irradiation remains a binding and challenging experimental study to conduct, difficulties can be overcome by ion beam processing. Ion beam processing of the ODS material allows to identify the radiation-induced Ostwald ripening as the mechanism governing the nano-particle response under irradiation. The result is the increase in size and a decrease in density of the finely dispersed Y2Ti2O7 nano-particles. Under neutron irradiation, radiation-induced Ostwald ripening appears to be less effective since a slight growth of nano-particles is observed. Further, our approach shows that nanoparticle growth kinetics should scale as φ1/3, φ being the radiation flux. This suggests that the low irradiation flux is at the origin of the slower growth kinetics of the neutron irradiated particles. Both neutron and ion irradiation induce a modification of the nanoparticles/matrix interfaces which are generally flat and sharp prior to irradiation and present steps after irradiation. This could alter the nano-particle coarsening during irradiation.

For a better understanding of the local fracture behavior of semi-brittle materials, we carried out bending experiments on notched microcantilevers of varying sizes in the micrometer range using NiAl single crystals. Smaller and larger beams were milled with a focused ion beam in the so-called “soft” <110> and “hard” <100> orientation and were tested in situ in a scanning electron microscope and ex situ with a nanoindenter, respectively. The measurements were evaluated using both linear-elastic fracture mechanics and elastic–plastic fracture mechanics. The results show that (i) the fracture toughness is in the same range as the macroscopically determined one which is around 3.5 MPa$\sqrt {\rm{m}}$ for the soft orientation and around 8.5 MPa$\sqrt {\rm{m}}$ for the hard orientation, that (ii) there is a strong influence of the anisotropic behavior of NiAl on the fracture toughness values, and that (iii) the J-integral technique is the most accurate quantification method.

Thermal conductivity is a familiar property of materials: silver conducts heat well, and plastic does not. In recent years, an interdisciplinary group of materials scientists, engineers, physicists, and chemists have succeeded in pushing back long-established limits in the thermal conductivity of materials. Carbon nanotubes and graphene are at the high end of the thermal conductivity spectrum due to their high sound velocities and relative lack of processes that scatter phonons. Unfortunately, the superlative thermal properties of carbon nanotubes have not found immediate application in composites or interface materials because of difficulties in making good thermal contact with the nanotubes. At the low end of the thermal conductivity spectrum, solids that combine order and disorder in the random stacking of two-dimensional crystalline sheets, so-called “disordered layered crystals,” show a thermal conductivity that is only a factor of 2 larger than air. The cause of this low thermal conductivity may be explained by the large anisotropy in elastic constants that suppresses the density of phonon modes that propagate along the soft direction. Low-dimensional quantum magnets demonstrate that electrons and phonons are not the only significant carriers of heat. Near room temperature, the spin thermal conductivity of spin-ladders is comparable to the electronic thermal conductivities of metals. Our measurements of nanoscale thermal transport properties employ a variety of ultrafast optical pump-probe metrology tools that we have developed over the past several years. We are currently working to extend these techniques to high pressures (60 GPa), high magnetic fields (5 T), and high temperatures (1000 K).

We developed a polyatomic cluster ion beam system for materials processing, and polyatomic clusters of materials such as alcohol and water were produced by an adiabatic expansion phenomenon. In this article, cluster formation is discussed using thermodynamics and fluid dynamics. To investigate the interactions of polyatomic cluster ions with solid surfaces, various kinds of substrates such as Si(100), SiO2, mica, polymethyl methacrylate, and metals were irradiated by ethanol, methanol, and water cluster ion beams. To be specific, chemical reactions between radicals of polyatomic molecules and surface Si atoms were investigated, and low-irradiation damage as well as high-rate sputtering was carried out on the Si(100) surfaces. Furthermore, materials processing methods including high-rate sputtering, surface modification, and micropatterning were demonstrated with ethanol and water cluster ion beams.

A rich research history exists for crystalline growth by vapor–liquid–solid (VLS) methods, but not for amorphous growth. Yet VLS growth in the absence of crystallographic influences provides an ideal laboratory for exploring surface energy effects, including the role of line tension. We discuss the growth of amorphous silica nanowires from indium droplets by a modified VLS method. Multiple strands issue from each droplet, each strand having <1% (i.e., < 5 nm) of the radius of the droplet. We analyze the surface forces for this system, including line tension, and combine data in a novel way to estimate the surface energy of silica, the interfacial energy of liquid indium on silica, and the line tension at the three-phase boundary. The results suggest that the growth of these silica strands would be impossible without the presence of a negative line tension that also serves to stabilize the strand radii against perturbation.

Separation by implemented oxygen (SIMOX)(111) substrates have been formed by oxygen-ion (16O+) implantation into Si(111), showing that a so-called “dose-window” at 16O+-implantation into Si differs from Si(100) to Si(111). In SIMOX(100), an oxygen dose of 4 × 1017/cm2 into Si(100) is widely recognized as the dose-window when the acceleration energy is 180 keV. For the first time, our work shows that an oxygen dose of 5 × 1017/cm2 into Si(111) is the dose-window for the formation of SIMOX(111) substrates when the acceleration energy is 180 keV. The difference between dose-windows is caused by anisotropy of the crystal orientation during growth of the faceted buried SiO2. We also numerically analyzed the data at different oxidation velocities for each facet of the polyhedral SiO2 islands. Numerical analysis results show good agreement with the experimental data.