We demonstrate a sub-terahertz (THz) and THz integration platform based on micromachined waveguides on silicon. The demonstrated components in the frequency range 225–325 GHz include waveguides, filters, waveguide vias, and low-loss transitions between the waveguide and the monolithic integrated circuits. The developed process relies on microelectromechanical systems manufacturing methods and silicon wafer substrates, promising a scalable and cost-efficient system integration method for future sub-THz and THz communication and sensing applications. Low-temperature Au/In thermo-compression and Au–Au laser bonding processes are parts of the integration platform enabling integration of millimeter-wave monolithic integrated circuits.

To overcome the low fabrication yield associated with single crystalline 3C–SiC diaphragm-based high temperature capacitive pressure sensors fabricated by wafer bonding, we have developed an alternative based on a polycrystalline SiC-on-Si architecture. The capacitive pressure sensing element, i.e., a thin film diaphragm, was fabricated using low stress and high conductivity low-pressure chemical vapor deposition poly-SiC thin films, and the sensing architecture was formed by wafer bonding a poly-SiC film to a Si substrate using phosphosilicate glass bonding films. With a geometric aspect ratio of up to 800:1 and a maximum deflection load eight times or more to their thickness, the poly-SiC diaphragm-based sensors presented repeatable pressure sensing characteristics up to 500 °C.

In this paper, micromachined devices for millimeter-wave applications at U- and V-bands are presented. These structures are designed using a rectangular coaxial line built of gold-coated SU-8 photoresist layers, where the coaxial center conductor is suspended in air by stubs. The designs include a stepped coplanar waveguide (CPW)-to-coaxial transition at 63 GHz, with an insertion loss of 0.39 dB at 67.75 GHz and a return loss better than −10 dB across the band of operation between 54.7 and 70.3 GHz. Two filters have been designed; one centered at 42 GHz with a 10% bandwidth, and another at 63 GHz with a 5% bandwidth. Measured insertion losses of 0.77 and 2.59 dB were obtained for these filters, respectively. Measured return loss lower than 13.8 dB over the passband was achieved for both designs. The structures presented in this paper involve a low-cost manufacturing process suitable to produce integrated subsystems at millimeter waves.

This paper proposes and demonstrates a method toobtain macroscopic work out of distributed microactuatorsfabricated by IC-compatible micromachiningprocesses. We have coordinated the simple and smallmotion of microactuators in order to perform a task. Theconcept and a control scheme are discussed first. In orderto show the feasibility, the fabrication and operation ofarrayed microactuators for conveyors are described. One uses thermally driven cantilevers and the other uses controlled air flow from micronozzles to carry flat objects.

This paper reports on a novel approach for producing high energy femtosecond pulses without external amplification. The so-called chirped-pulse oscillator (CPO) concept is based on an extended-cavity oscillator, operating at small net positive intracavity group delay dispersion (GDD), over a broad spectral range by the use of chirped multilayer mirrors. The resultant chirped picosecond pulses are compressed by a dispersive delay line external to the laser cavity. Utilizing this technique, sub-30 fs pulses with an energy exceeding 200 nJ at a repetition rate of 11 MHz were produced. The demonstrated peak power in excess of 5 MW is the highest ever achieved from a cw-pumped laser and is expected to be scaleable to tens of megawatts by increasing the pump power and/or decreasing the repetition rate. The demonstrated source allows micromachining of any materials under relaxed focusing conditions.