This paper gives an overview of frequency regulation, standardization, and applications of 60 GHz communication systems. Based on forecasted developments of mobile IP traffic, the motivation for investigating circuits, and systems for the 60 GHz band is underlined. Some physical properties of 60 GHz radio waves are outlined and implications on potential applications are sketched. The current international and European frequency regulation aspects are presented. The main parameters of three different international standards are summarized and compared with each other. Details of channel spacing and channel bonding are given. Based on the investigation of different applications, the main system requirements are derived. Finally, some information on protocol issues and system integration aspects are given.

A 52–61 GHz power amplifier (PA) is implemented in 65 nm bulk complementary metal oxide semiconductor (CMOS) technology. The proposed PA employs a transformer-based power combiner to sum the output power from two unit PAs. Each unit PA uses transformer-coupled two-stage differential cascode topology. The differential cascode PA is able to increase the output power and ensure stability. The transformer-based passives enable a compact layout with the PA core area of only 0.3 mm2. The PA achieves a peak power gain of 10.2 dB with 3-dB bandwidth of 9 GHz. The measured saturated output power is 14.8 dBm with a peak power-added efficiency (PAE) of 7.2%. The reverse isolation is smaller than −33 dB from 25 to 65 GHz. The PA consumes a quiescent current of 143 mA from a 1.6 V supply.

Wireless data communication is pushing towards 60 GHz and will most likely be served by SiGe and Complementary Metal Oxide Semiconductor (CMOS) technologies in the consumer market. Nevertheless, some applications are imposing superior performance requirements on the analog frontend, and employing III-V compound semiconductors can provide significant advantages with respect to transmitter power and noise figure. In this paper, we present essential building blocks and a novel single-chip low complexity transceiver Monolithic Microwave Integrated Circuit (MMIC) with integrated antenna switches for 60 GHz communication, fabricated in a 100 nm metamorphic high electron mobility transistor (mHEMT) technology. This technology features a measured noise figure of <2.5 dB in low-noise amplifiers at 60 GHz and the realized medium power amplifiers achieve more than 20 dBm saturated output power. Integrated antenna switches with an insertion loss of less than 1.5 dB enable the integration of the transmit and the receive stages on a single chip. A single-chip transceiver with external subharmonic Local Oscillator (LO) supply for its I/Q down- and up-converter achieves a linear conversion gain in both, the Transmit (Tx) and the Receive (Rx) paths, of more than 10 dB.

In this paper, micromachined devices for millimeter-wave applications at U- and V-bands are presented. These structures are designed using a rectangular coaxial line built of gold-coated SU-8 photoresist layers, where the coaxial center conductor is suspended in air by stubs. The designs include a stepped coplanar waveguide (CPW)-to-coaxial transition at 63 GHz, with an insertion loss of 0.39 dB at 67.75 GHz and a return loss better than −10 dB across the band of operation between 54.7 and 70.3 GHz. Two filters have been designed; one centered at 42 GHz with a 10% bandwidth, and another at 63 GHz with a 5% bandwidth. Measured insertion losses of 0.77 and 2.59 dB were obtained for these filters, respectively. Measured return loss lower than 13.8 dB over the passband was achieved for both designs. The structures presented in this paper involve a low-cost manufacturing process suitable to produce integrated subsystems at millimeter waves.

This paper presents a hardware efficient receiver architecture, to be used in low-cost, ultra-high rate 60 GHz wireless communication systems. The receiver utilizes a simple, feed-forward carrier recovery concept, performing phase and frequency synchronization in the analog domain. This enables 1-bit baseband processing without a need of ultra-high speed and high precision analog-to-digital conversion, offering a strong simplification of the system architecture and comparatively low power consumption. In a first prototype implementation, the receiver is realized in a low-cost SiGe technology as two separate ICs: the 60 GHz/5 GHz downconverter, and the intermediate frequency synchronous demodulator. The simple synchronous reception concept is experimentally validated for up to 3.5 Gbit/s data rate, which constituted the limit of the existing experimental setup. Furthermore, the downconverter demonstrates that low-cost technologies (fop/fmax ~ 0.75) can be used to realize short-range data links at 60 GHz, with low-noise amplifiers in a more performant technology as needed.

The research on the design of receiver front-ends for very high data-rate communication in the 60 GHz band in nanoscale Complementary Metal Oxide Semiconductor (CMOS) technologies is going on for some time now. Although a multitude of 60 GHz front-ends have been published in recent years, they are not consequently optimized for low power consumption. Thus, these front-ends dissipate too much power for battery-powered applications like handheld devices, mobile phones, and wireless sensor networks. This article describes the design of a direct conversion receiver front-end that addresses the issue of power consumption, while at the same time permitting low cost (due to area minimization by the use of spiral inductors). It is implemented in a 65 nm CMOS technology. The realized front-end achieves a record power consumption of only 43 mW including low-noise amplifier (LNA), mixer, a voltage controlled oscillator (VCO), a local oscillator (LO) buffer, and a baseband buffer (without this latter buffer the power consumption is even lower, only 29 mW). Its pad-limited size is 0.55 × 1 mm2. At the same time, the front-end achieves state-of-the-art performance with respect to its other properties: Its maximum measured power conversion gain is 30 dB, the RF and IF bandwidths are 56.5–61.5 and 0–1.5 GHz, respectively, its measured minimum noise figure is 9.2 dB, and its measured IP−1 dB is −36 dBm.

A fully integrated transmitter (TX) and receiver (RX) front-end chipset, produced in 0.25 µm SiGe:C bipolar and complementary metal oxide semiconductor (BiCMOS) technology, is presented. The front-end is intended for high-speed wireless communication in the unlicensed ISM band of 9 GHz around 60 GHz. The TXand RX features a modified heterodyne topology with a sliding intermediate frequency. The TX features a 12 GHz in-phase and quadrature (I/Q) mixer, an intermediate frequency (IF) amplifier, a phase-locked loop, a 60 GHz mixer, an image-rejection filter, and a power amplifier. The RX features a low-noise amplifier (LNA), a 60 GHz mixer, a phase-locked loop (PLL), and an IF demodulator. The measured 1-dB compression point at the TX output is 12.6 dBm and the saturated power is 16.2 dBm. The LNA has measured noise figure of 6.5 dB at 60 GHz. Error-free data transmission with a 16 quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM) signal and data rate of 3.6 Gbit/s (without coding 4.8 Gbit/s) over 15 m was demonstrated. This is the best reported result regarding both the data rate and transmission distance in SiGe and CMOS without beamforming.

A highly integrated transceiver microwave monolithic integrated circuit (MMIC) manufactured in a 200-GHz SiGe:C production technology is presented, applicable for sensing- and broadband communication applications. To simplify the analog frontend, the fully differential design is based on a homodyne architecture. It comprises an LO signal generation unit based on a wideband 60 GHz fundamental Voltage Controlled Oscillator (VCO) and an on-chip prescaler, covering the full operational frequency band of 57–64 GHz. Within this bandwidth, the upconverter exhibits an upconversion gain of 23.6–26.4 dB and a maximum output-referred 1-dB compression point of 14 dBm. The downconverter provides a Double Sideband (DSB) noise figure of 9–12 dB with a downconversion gain of 37–71 dB. On chip AC-coupling of the receiver IF-output with a lower −3 dB cut-off frequency as low as 16 kHz eliminates mixer DC-offsets and enables on-chip Intermediate Frequency (IF) amplification. The whole transceiver MMIC draws a current of 415 mA from a single 3.3 V supply and requires few components externally to the chip.

This paper provides an overview of the research carried on in the EASY-A project concerning the design of antennas for different applications in the unlicensed band around 60 GHz, and their integration into compact RF front-ends. Different antenna configurations, in conventional microwave substrate and low-temperature co-fired ceramics (LTCC), were studied and fabricated. The results comply with the requirements established for various scenarios.

In this paper a novel differentially fed Ultra-Wide Band (UWB) antenna in low-temperature co-fired ceramics (LTCC) technology to be used in the 60 GHz band for integrated RF front-ends is presented. The antenna is based on the aperture stacked patch fed via H-shaped aperture to achieve more than 10 GHz operational bandwidth. The antenna is fed by a parallel-wire transmission line which enables the antenna to be directly integrated with differential Monolithic Microwave Integrated Circuits (MMICs). To alleviate influence of the surface waves (efficiently excited in LTCC material due to its high dielectric constant) on the antenna radiation and realize uni-directional radiation patterns, a dedicated shield is added to the antenna. The measured results of the shielded antenna showed that the antenna has an operational bandwidth from 51 GHz to over 65 GHz, the gain is about 3.5–8 dBi, and −5 dB beamwidth is about ±30°. The measurement results also demonstrated that the shield indeed improves the antenna impedance bandwidth, gain, and radiation patterns substantially.

Antenna on chip (AoC) and antenna in package (AiP) solutions for millimeter-wave (mmWave) applications and their characterization are presented in this paper. Antenna integration on low resistivity (LR) and high resistivity (HR) silicon substrate are expected. And, in a packaging approach, the combination of antenna on silicon with a material, which has the effect of a “lens”, allowing increasing gain is presented. In a second part, to satisfy beamforming capabilities, a hybrid integration of the antenna on silicon and glass substrates is proposed.

The large bandwidth of the 60 GHz frequency band enables wireless short-range applications with data rates of several Gbit/s. The German project EASY-A has focused on early prototype implementations for selected applications, although no generally accepted 60 GHz standard has been available at the time. The implementations are based on application-oriented physical layer designs and link-budget investigations that account for the scenario-specific channel characteristics and for different integration technologies. This paper discusses the results of these investigations and details the hardware implementation of the digital baseband processing that relies on considerable parallelization. The link-budget results show that SiGe technology allows for 1 Gbit/s at a range of 3.5 m in non-line-of-sight environments, while up to 10 Gbit/s are feasible at more than 1 m in case of strong line of sight.

This article presents measurement and analysis results for 60 GHz short-range wideband radio channels. We consider two scenarios, referred to as “very-high-rate extended-range” (VHR-E) and “ultra-high-rate cordless” (UHR-C). The VHR-E measurements aimed at 60 GHz fixed networks for an Airbus A340 cabin both under static and dynamic (shadowing due to passenger movement) channel conditions. We describe the channel sounder used for the VHR-E measurements and present a simple multipath model derived from the measurements. Furthermore, simulations show the feasibility of the ray-tracing approach for this kind of channel. As a typical UHR-C use case, a data kiosk scenario was investigated. Various propagation conditions are analyzed with respect to channel gain, time dispersion, and frequency selectivity.

Various wireless applications are currently under development for the unlicensed 60 GHz band. This paper describes three examples with different system requirements. The first two are point-to-multipoint wireless networks (in an airplane and in a car) and the third one is a short range point-to-point connection. Special requirements of the applications are a high number of users for the point-to-multipoint connection and a high data rate of 10 Gbit/s for the point-to-point connection system. Implementation aspects are pointed out, which are important to demonstrate the functionality of the system in a relevant environment and are key aspects to develop the related products. For example, integration aspects of the antenna into an airplane passenger seat and the receiver concept of the radio frequency-(RF) front-end to reducing the power consumption at ultrahigh data rates are described. Additionally, to determine the geometrical system architecture, ray-tracing simulations inside an aircraft and inside a car were performed.

This study deals with a non-exhaustive overview of location systems operating in the 60 GHz frequency band. Both impulse and frequency hopping topologies are considered and the performances of the two realized systems are presented. For each system, a specific signal processing has been implemented to prevent the degradation of the location error from the impact of the multipath propagation.

In this article, analog fiber optic links (radio-over-fiber, RoF, links) are presented as a flexible, low-cost solution for in-house distribution of millimeter-wave (mmw) signals. Mode-locked laser diodes (MLLD) serve as inexpensive mmw sources for the downlink distribution of mmw signals across an optical fiber link. We compare the robustness of direct and external RF modulation for such MLLD-based RoF systems, whereas the error vector magnitude (EVM) of the received symbols serves as a figure of merit. On the eve of 60 GHz WLAN standardization, we experimentally investigate the transmission of narrowband WLAN (IEEE 802.11a) signals in the millimetric range at moderate data rates. We also demonstrate broadband transmission of multi-band orthogonal frequency-division multiplexing (MB-OFDM) ultra-wideband (UWB) european computer manufacturers association (ECMA 368) signals in the 60 GHz band for data rates of up to 480 Mbps.

The biocompatibility of millimeter-wave devices and systems is an important issue due to the wide number of emerging body-centric wireless applications at millimeter waves. This review article provides the state of knowledge in this field and mainly focuses on recent results and advances related to the different aspects of millimeter-wave interactions with the human body. Electromagnetic, thermal, and biological aspects are considered and analyzed for exposures in the 30-100 GHz range with a particular emphasis on the 60-GHz band. Recently introduced dosimetric techniques and specific instrumentation for bioelectromagnetic laboratory studies are also presented. Finally, future trends are discussed.