La3+ doped yttrium iron garnet films have been grown on (111) oriented gadolinium gallium garnet substrates via Liquid phase epitaxy technique as a basic material for ISHE device fabrication. Pt as a material with a large spin hall angle was used as a spin detection layer. We investigated the dependence of the spin pumping effect on the power and frequency of the excitation microwaves in La:YIG/Pt bilayers by measuring the ISHE voltage. We demonstrated that the area under the ISHE curve(SISHE) across a wide power range had a nearly linear correlation with the input microwave power (Pin). The parameter SISHE can be used to describe the spin current energy in a Pt layer which can be a useful parameter for a microwave rectifier.

Garnet films based on (BiPrGdLu) (FeGa) have been grown on (210) and (100) oriented SGGG substrates. (210) films with an easy plane of magnetization provided optimal imaging contrast. Incorporation of Au nanoparticles into an epitaxially grown film was done and these films show an increase in Faraday rotation, ostensibly due to the plasmon resonance effect.

This work is dedicated to the development of new type of UV phosphors based on single crystalline films (SCF) of aluminum garnet compounds grown by liquid phase epitaxy (LPE). The development of two types of UV emitting SCF scintillators is reported in this work: 1) Pr-doped SCF of Y-Lu-Al garnet having the intensive Pr3+ f-d luminescence in the 300-400 nm spectral ranges with a decay time of about 13-18 ns; 2) SCF of Y-Lu-Al-garnet doped with Sc3+ isoelectronic impurity emitting in the 290-400 nm range due to the formation of the ScY,Lu and ScAl centers with a luminescence decay time in the order of several hundred ns.

Epitaxial BiFeO3 (BFO) thick films were fabricated on SrTiO3 (STO) substrates by a simple liquid-phase epitaxy (LPE) growth technique. To avoid the evaporation of Bi, in this process, we used the lid substrate. As starting materials, we used calcined powder or amorphous films deposited by pulsed laser ablation. The fabricated films were found to have a single perovskite phase and be (100)-oriented. Cube-on-cube epitaxial growth of film on the STO substrate was also confirmed by ϕ-scan measurements. The films grown on the substrate display a multigrain structure with a maximum in-plane size of approximately 100μm, and the film thickness was about 3-35 μm. The interface structure between the film and the substrate was relatively smooth. These results indicate that the proposed simple LPE technique is highly suitable for the fabrication of BFO thick films.

Flash lamp annealing in the millisecond regime of heteroepitaxial silicon carbide on silicon structures involves melting the Si below the SiC layer, but the deep facetted nature of the solid-liquid interface leads to unacceptable surface roughness. This paper describes a method of controlling melting by implanting a high dose of carbon or germanium at a controlled depth below the Si/SiC interface, which significantly alters the melting characteristics of the silicon. Results confirm the effectiveness of these approaches for increasing surface uniformity, making liquid phase processing compatible with standard device fabrication techniques. A thermal model has also been developed to describe this process and results indicate that the theoretical work is consistent with the experimental evidence. The model is a valuable tool for predicting onset of melting, maximum temperatures and process windows for liquid phase epitaxy.

Deep mesa etching and surface roughening have been implemented to InAs flip-chip LEDs emitting at 3300 nm (300 K). Near field and power measurements confirmed the output power enhancement of about 2 and brightness increase with and equivalent to a black body temperature of about 1250 K.

Interfacial structures of c-axis-oriented YBa2Cu3O7–y (Y123) and Nd1+xBa2–xCu3O7–y (Nd123) films were investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with geometrical lattice matching and molecular orbital calculations. These films were formed on MgO(001) substrates by liquid-phase epitaxy. Despite the similarity in lattice constants between Y123 and Nd123, the in-plane orientation relationship (OR) to the substrates is different: [100]film//[100]substrate(I) for Y123 and [110]film//[100]substrate(II) for Nd123. From the results of HRTEM observations and image simulations, it was found that the Y123 and Nd123 films are terminated by BaO and CuO-chain layers at the interfaces, respectively. For both the Y123/MgO and Nd123/MgO systems, the OR(I) is assessed to be the most favorable in point of geometrical matching and the OR(II) is the second among the rotational misorientations on the [001]film and [001]MgO. The molecular orbital calculations reveal that the interface with the OR(II) and the CuO-chain layer termination is preferable in terms of covalent bonding for both the systems. Consequently, we suggest that the preferential interfacial structures are delicately determined by a balance of the geometrical and chemical factors at the interfaces, resulting in making the lowest interfacial free energies.