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3.3 μm high brightness LEDs

Published online by Cambridge University Press:  01 February 2011

Boris A. Matveev ,
Nonna V. Zotova ,
Natalya Il'inskaya ,
Sergey A. Karandashev ,
Maxim A. Remennyi ,
Nicolay M. Stus' ,
Anatoly P. Kovchavtsev ,
Georgii L. Kuryshev ,
Vladimir G. Polovinkin  and
Natalya Tarakanova
Boris A. Matveev
Affiliation:
bmat@iropt3.ioffe.rssi.ru, Ioffe Physico-Technical Institute RAS, Physics of nanoheterostructures, Polytechnicheskaya 26, St.Petersburg, 194021, Russian Federation, (812) 247 7446, (812) 247 1017
Nonna V. Zotova
Affiliation:
bmat@iropt3.ioffe.rssi.ru, Ioffe Physico-Technical Institute RAS, Russian Federation
Natalya Il'inskaya
Affiliation:
Natalya.ilynskaya@mail.ioffe.ru, Ioffe Physico-Technical Institute RAS, Russian Federation
Sergey A. Karandashev
Affiliation:
bmat@iropt3.ioffe .rssi.ru, Ioffe Physico-Technical Institute RAS, Russian Federation
Maxim A. Remennyi
Affiliation:
Mremennyy@mail.ioffe.ru, Ioffe Physico-Technical Institute RAS, Russian Federation
Nicolay M. Stus'
Affiliation:
bmat@iropt3.ioffe.rssi.ru, Ioffe Physico-Technical Institute RAS, Russian Federation
Anatoly P. Kovchavtsev
Affiliation:
kap@isp.nsc.ru, Institute of Semiconductor Physics, Siberian Branch of RAS, Russian Federation
Georgii L. Kuryshev
Affiliation:
kap@isp.nsc.ru, Institute of Semiconductor Physics, Siberian Branch of RAS, Russian Federation
Vladimir G. Polovinkin
Affiliation:
PVG@isp.nsc.ru, Institute of Semiconductor Physics, Siberian Branch of RAS, Russian Federation
Natalya Tarakanova
Affiliation:
bmat@iropt3.ioffe.rssi.ru, IoffeLED, Ltd., Russian Federation
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Abstract

Deep mesa etching and surface roughening have been implemented to InAs flip-chip LEDs emitting at 3300 nm (300 K). Near field and power measurements confirmed the output power enhancement of about 2 and brightness increase with and equivalent to a black body temperature of about 1250 K.

Keywords

optoelectronicmicrostructureliquid-phase epitaxy (LPE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE01-04
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1 Green, A., Gevaux, D., Roberts, C., and Philips, C., Physica E: Low-dimensional Systems and Nanostructures, 20, 531 (2004)Google Scholar
2 Tomm, J. W.,. Weik, F., Glatthaar, R., Vetter, U., Nurnus, J., Lambrecht, A., Spellenberg, B., Bassler, M., Behringer, M., and Luft, J., Proc. SPIE 5722 (in print)Google Scholar
3 Malyutenko, V., Malyutenko, O., Zinovchuk, A., Zotova, N., Karandashev, S., Matveev, B., Remennyi, M., Stus', N., Book of abstracts of the MIOMD-VI conference, 2004, St Petersburg, Russia, (http://www.ioffe.rssi.ru/MIOMD-VI/miomd-abs.html)Google Scholar
4 Das, N. C., Simonis, G., Bradshaw, J., Goldberg, A., and Gupta, N., Proc. SPIE 5408, 136–143 (2004)Google Scholar
5 Nash, G.R., Gordon, N.T., Hall, D.J., Ashby, M.K., Little, J.C., Masterton, G., Hails, J.E., Giess, J., Haworth, L., Emeny, M.T., Ashley, T., Physica E, 20, 540–547(2004)Google Scholar
6 Zabelin, V., Zakheim, D.A. and Gurevich, S.A., IEEE J. Quant. Electr. 40, 1675–1686 (2004)Google Scholar
7 Matveev., B., Zotova, N., Il'inskaya, N., Karandashev, S., Remennyi, M., and Stus', N., phys. stat. sol. (c) 2, 927–930 (2005)Google Scholar
8 Bazovkin, V.M., Guzev, A.A., Kovchavtsev, A.P., Kuryshev, G.L., Larshin, A.S., Polovinkin, V.G., “Prikladnaya Phyzika” pp. 97–102 (2005) ( in Russian)Google Scholar
9 Malyutenko, V.K.. “Maps show hotspots in mid-IR LEDs”, http://optics.org/articles/news/9/4/10 (2003)Google Scholar