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3.3 μm high brightness LEDs

Published online by Cambridge University Press:  01 February 2011

Boris A. Matveev ,
Nonna V. Zotova ,
Natalya Il'inskaya ,
Sergey A. Karandashev ,
Maxim A. Remennyi ,
Nicolay M. Stus' ,
Anatoly P. Kovchavtsev ,
Georgii L. Kuryshev ,
Vladimir G. Polovinkin  and
Natalya Tarakanova
Boris A. Matveev
Affiliation:
bmat@iropt3.ioffe.rssi.ru, Ioffe Physico-Technical Institute RAS, Physics of nanoheterostructures, Polytechnicheskaya 26, St.Petersburg, 194021, Russian Federation, (812) 247 7446, (812) 247 1017
Nonna V. Zotova
Affiliation:
bmat@iropt3.ioffe.rssi.ru, Ioffe Physico-Technical Institute RAS, Russian Federation
Natalya Il'inskaya
Affiliation:
Natalya.ilynskaya@mail.ioffe.ru, Ioffe Physico-Technical Institute RAS, Russian Federation
Sergey A. Karandashev
Affiliation:
bmat@iropt3.ioffe .rssi.ru, Ioffe Physico-Technical Institute RAS, Russian Federation
Maxim A. Remennyi
Affiliation:
Mremennyy@mail.ioffe.ru, Ioffe Physico-Technical Institute RAS, Russian Federation
Nicolay M. Stus'
Affiliation:
bmat@iropt3.ioffe.rssi.ru, Ioffe Physico-Technical Institute RAS, Russian Federation
Anatoly P. Kovchavtsev
Affiliation:
kap@isp.nsc.ru, Institute of Semiconductor Physics, Siberian Branch of RAS, Russian Federation
Georgii L. Kuryshev
Affiliation:
kap@isp.nsc.ru, Institute of Semiconductor Physics, Siberian Branch of RAS, Russian Federation
Vladimir G. Polovinkin
Affiliation:
PVG@isp.nsc.ru, Institute of Semiconductor Physics, Siberian Branch of RAS, Russian Federation
Natalya Tarakanova
Affiliation:
bmat@iropt3.ioffe.rssi.ru, IoffeLED, Ltd., Russian Federation
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Abstract

Deep mesa etching and surface roughening have been implemented to InAs flip-chip LEDs emitting at 3300 nm (300 K). Near field and power measurements confirmed the output power enhancement of about 2 and brightness increase with and equivalent to a black body temperature of about 1250 K.

Keywords

optoelectronicmicrostructureliquid-phase epitaxy (LPE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE01-04
Copyright
Copyright © Materials Research Society 2006

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References

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