In this article, the secondary electron-emission properties of both vertically and laterally inhomogeneous samples are discussed. To study the effect of surface coverage, the total electron-emission yield of tungsten and niobium samples was measured as a function of primary electron energy and oxide thickness. A method is suggested to avoid charging difficulties during AES measurements of samples that consist of both metal and various insulator parts.

The physical mechanisms involved in electron irradiation of insulating specimens are investigated by combining some simple considerations of solid-state physics (trapping mechanisms of electrons and secondary electron emission) with basic equations of electrostatics. To facilitate the understanding of the involved mechanisms only widely irradiated samples having a uniform distribution of trapping sites are considered. This starting hypothesis allows development of simple models for the trapped charge distributions in ground-coated specimens as investigated in electron probe microanalysis (EPMA) as well as for the bare specimens investigated in scanning electron microscopy (SEM) and environmental SEM (ESEM). Governed by self-regulation processes, the evolution of the electric parameters during the irradiation are also considered for the first time and practical consequences in EPMA, SEM, and ESEM are deduced. In particular, the widespread idea that the noncharging condition of SEM is obtained at a critical energy E2 (where δ + η = 1 with δ and η yields obtained in noncharging experiments) is critically discussed.

Very low energy electrons in a solid should behave like Bloch electrons and will interact with perturbations of the atomic lattice, that is, with phonons. So we use the acoustic phonon scattering for replacing the elastic binary encounter approximation of the Mott scattering for electrons with low energies E < 100 eV. For ballistic electrons (1 eV < E < Eg) and higher energies up to 1 keV we determined the acoustic phonon scattering and the impact ionization rate by means of the “backscattering-versus-range” proof and respective η(E0) − R(E0) diagrams. Electron trajectories demonstrate the relatively short range of primary electrons (PE) with energies E > 50 eV due to strong impact ionization losses (cascading) and the much greater range of secondary electrons (SE) with E < 50 eV, finally as a consequence of less effective phonon losses. The field-dependent transport parameters allow us to model the self-consistent charge transport and charging-up of insulating SiO2 layers during electron bombardment maintained by the current components of primary electrons jPE, secondary electrons jSE, and associated ballistic holes jBH, as well as by Fowler–Nordheim field injection jFN from the substrate. The resulting distributions of currents j(x,t), charges ρ(x,t), electric fields F(x,t), and the potential V(x,t) across the dielectric layer explain the phenomena of field-enhanced and field-blocked secondary electron emission with rates δ [gel ] 1.

The changes of the work function (Φ) and the secondary electron emission (SEE) of oxygen covered polycrystalline tungsten occurring after ion sputtering and heat treatments have been investigated. The chemical composition was analyzed by X-ray photoelectron spectroscopy (XPS), and the electron emission properties by work function spectroscopy (WFS). We observed in what manner the chemical changes of the surface are reflected in the work function and SEE. The simultaneous change of Φ and SEE in the case of oxygen covered tungsten have been pointed out and a direct relationship between them can be supposed.