Cathodoluminescence (CL) spectroscopy in an SEM has been used to investigate the point defect structure of clear natural α-quartz at 295 K. Cathodoluminescence processes and experimental factors that influence the CL spectra from α-quartz are investigated. Electron irradiation may induce changes in the average local crystal micro structure of quartz, locally transforming it to a less dense, amorphized state. The observed CL emissions are identified with a range of native and impurity defect centres including: interstitial molecular O at 0.968 eV; a charge-compensated substitutional Fe3+ impurity centre at —1.65 eV; a non-bridging oxygen hole centre (NBOHC) at 1.9 eV; an NBOHC with OH~ precursor at 1.95 eV; an NBOHC with a non-bridging impurity (e.g. Li+, Na+ or K+) precursor at — 1.9 eV; a radiative recombination of the self-trapped exciton (STE) associated with an E' centre in electron-irradiation-amorphized quartz at 2.3 eV; a radiative recombination of the STE associated with the E1' centre in α-quartz at 2.7 eV; a charge-compensated-substitutional Al3+ impurity centre at 3.3 eV; and a neutral relaxed O vacancy at 4.3 eV. In addition, unresolved contributions from O-deficient defects in electron-irradiation-amorphized SiO2 are likely at —2.7 and 4.3 eV.

Silicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO2/4H-SiC interface critical to the development of SiC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility for inversion-mode 4H-SiC MOSFETs. Advances in interface passivation have revived interest in SiC MOSFETs for a potentially lucrative commercial market for devices that operate at 5 kV and below.