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Interface Passivation for Silicon Dioxide Layers on Silicon Carbide

Published online by Cambridge University Press:  31 January 2011

Sarit Dhar ,
Shurui Wang ,
John R. Williams ,
Sokrates T. Pantelides  and
Leonard C. Feldman
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Abstract

Silicon carbide is a promising semiconductor for advanced power devices that can outperform Si devices in extreme environments (high power, high temperature, and high frequency). In this article, we discuss recent progress in the development of passivation techniques for the SiO2/4H-SiC interface critical to the development of SiC metal oxide semiconductor field-effect transistor (MOSFET) technology. Significant reductions in the interface trap density have been achieved, with corresponding increases in the effective carrier (electron) mobility for inversion-mode 4H-SiC MOSFETs. Advances in interface passivation have revived interest in SiC MOSFETs for a potentially lucrative commercial market for devices that operate at 5 kV and below.

Keywords

channel mobilityinterface passivationinterface statesmetal oxidesemiconductor field-effect transistorsMOSFETssilicon carbidesilicon dioxide
Type
Research Article
Information
MRS Bulletin , Volume 30 , Issue 4: Advances in Silicon Carbide Electronics , April 2005 , pp. 288 - 292
Copyright
Copyright © Materials Research Society 2005

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