The secondary electron (SE) signal over a cleaved surface of GaAs p-i-n solar cells containing stacks of quantum wells (QWs) is analyzed by high-resolution scanning electron microscopy. The InGaAs QWs appear darker than the GaAsP barriers, which is attributed to the differences in electron affinity. This method is shown to be a powerful tool for profiling the conduction band minimum across junctions and interfaces with nanometer resolution. The intrinsic region is shown to be pinned to the Fermi level. Additional SE contrast mechanisms are discussed in relation to the dopant regions themselves as well as the AlGaAs window at the p-region. A novel method of in situ observation of the SE profile changes resulting from reverse biasing these structures shows that the built-in potential may be deduced. The obtained value of 0.7 eV is lower than the conventional bulk value due to surface effects.

The surfaces of crystalline samples of 3d-metals (Mn, Fe, Co, Ni, and Cu) and their stoichiometric oxides have been studied by Auger spectroscopy. A correlation between the change in the LVV (L-inner level-valence-valence electron transition) Auger intensities and the change of the squares of the corresponding atomic-magnetic moments has been observed. This is because of the complicated nature of the Auger process. That is, the Auger electron emission is a result of the inner atomic level excitation by electron impact and Auger annihilation of the inner-level hole. Therefore, the Auger process has been considered a second-order process, and spin polarization of the valence states has been taken into account for the LMM (L-inner level-M-inner level-M-inner level electron transition) Auger spectra of 3d-metals.