Strain Profiles in Si Channel of PMOS Devices Affected by Shallow-Trench Isolation Strain Relaxation In Embedded SiGe

C Vartuli; G Lian; YS Choi; J Chung

doi:10.1017/S1431927610054577

Strain Profiles in Si Channel of PMOS Devices Affected by Shallow-Trench Isolation Strain Relaxation In Embedded SiGe

Published online by Cambridge University Press: 01 August 2010

C Vartuli ,

G Lian ,

YS Choi and

J Chung

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C Vartuli: Affiliation:
Texas Instruments
G Lian: Affiliation:
Texas Instruments
YS Choi: Affiliation:
Texas Instruments
J Chung: Affiliation:
Texas Instruments

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Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Type: Abstract
Information: Microscopy and Microanalysis , Volume 16 , Supplement S2 , July 2010 , pp. 1924 - 1925

DOI: https://doi.org/10.1017/S1431927610054577 [Opens in a new window]

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Strain Profiles in Si Channel of PMOS Devices Affected by Shallow-Trench Isolation Strain Relaxation In Embedded SiGe

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