Photoluminescence (PL) of Er-doped ZnO nanoparticle films was studied. The films were fabricated using e-beam evaporation. The films were subsequently annealed at 700 °C in air for an hour. The atomic force microscopy (AFM) image revealed nano-sized ZnO particles. PL was measured at two excitation wavelengths, 325 and 514.5 nm. The 325 nm is used for exciting the ZnO host semiconductor and 514.5 nm is used for directly exciting Er3+ ions in the ZnO films. Er3+ luminescence was observed from the annealed film using either indirect (325 nm) or direct (514.5 nm) excitations. It has been found that the indirect excitation is about 40 times more efficient than the direct excitation in producing 1.54 μm PL. With indirect excitation, the Er3+ luminescence observed is attributed to energy transfer from ZnO host to the Er3+ ions doped. Energy transfer from e-h pairs resulting from ZnO host excitation may provide efficient routes for exciting Er3+ ions inside nano-crystalline particles of the films.

The garnet Ca3Sc2Si3O12 (CSSO) and the silico-carnotite Ca3Y2Si3O12 (CYSO) and Ca3Lu2Si3O12 (CLSO) materials, both undoped and doped with Pr3+, have been synthesized by solid state reaction at high temperature. The luminescence spectroscopy and the excited state dynamics of the materials have been studied upon VUV and X-ray excitation using synchrotron radiation. All doped samples have shown efficient 5d-4f emission upon direct VUV excitation of 5d levels, but only CSSO:Pr3+ shows luminescence upon interband VUV or X-ray excitation. The VUV excited emission spectra of CYSO:Pr3+ and CLSO:Pr3+ show features attributed to emission from two distinct sites accommodating the Pr3+ dopant. The decay kinetics of the Pr3+ 5d-4f emission in CSSO:Pr3+ upon VUV excitation across the conduction band are characterized by decay times in the range 25-28 ns with no significant rise after the excitation pulse. They appear to be faster upon X-ray irradiation than for VUV excitation. Weak afterglow components are attributed to defect luminescence.

Highly crystalline and transparent Eu-doped Gd2O3 thin films were produced through a modified sol-gel method that did not require the use of any chelating agent. The effect of the atomic fraction of Eu3+ ions (‘x’ =0.05-0.30) on the structural, optical and luminescent properties has been studied. X-ray diffraction studies showed the preferential growth of Gd2-xEuxO3 thin films along the (400) plane corresponding to the cubic phase. UV-vis measurements revealed the high film transparency of the films in the visible region and a band gap value of 5.3eV. It has also been observed that the luminescence properties of the films were strongly dependent on both, the excitation wavelength and Eu concentration; the most efficient excitation conducive to red luminescence was achieved at the absorption band of Gd2O3 host (229nm). Under this condition all films exhibited strong red emission that is characteristic of Eu3+ ions. The emission intensity was also dependent on the doping level; the most intense luminescence was obtained at ‘x’=0.15. The drop in the luminescence intensity observed for ‘x’ values higher than 0.15 was attributed to quenching concentration effect.

Lithium Niobate doped with 4f-ions is of great interest for both fundamental science and advanced applications including high efficiency lasers with frequency conversion, elements for an all-optical telecommunication network and quantum cryptography. Our study has shown that 4f-ions create an unexpected variety of completely different non-equivalent centers in both stoichiometric and lithium deficient congruent crystals. Dominant Nd1 and Yb1 centers have C3 point symmetry (axial center), whereas all Er and most other Nd and Yb centers have the lowest C1 symmetry. Distant defects create small distortions of the crystal field at the impurity site, which cause line broadening, but do not change the C3 symmetry of observed EPR spectra. Defects in the near neighborhood can lower center symmetry from C3 to C1. We concluded that Nd1 has distant charge compensation, whereas the charge excess in low-symmetry Nd(Li) centers is compensated by near lithium or niobium vacancies. Since no axial centers were found for Er, models with cation vacancies can not describe our experimental data. The dominant axial Yb1 center has no defects in its surrounding. One axial and one low-symmetry Yb centers are self compensating Yb(Li)-Yb(Nb) pairs. Six other centers are different complexes of Yb3+ and intrinsic defects. Obtained data can be used for defect engineering for tailoring properties of photonic materials.