The fabrication of diamond-like carbon (DLC) micro-gear by room temperature curing nanoimprint lithography (RTC-NIL) using glass-like carbon (GC) molds as applications to the DLC-based medical MEMS (Micro Electronic Mechanical Systems) was investigated. The DLC film which has excellent properties similar to chemical vapor deposited (CVD) diamond films was used as the patterning material. We propose GC as mold material because GC has higher etching selectivity than a diamond film. The etching selectivity of polysiloxane film against a GC substrate is about 5 times as high as that of a diamond film. Therefore we fabricated the GC molds that have micro-gear patterns with 30 µm-tip diameter and 500 nm-tooth thickness. We carried out the RTC-NIL process using the GC micro-gear molds under the following optimum conditions. 1 min-time from spin-coating to imprint: t1, 0.5 MPa-imprinting pressure: P and 5 min-holding time: t2, and then the imprinted polysiloxane pattern on DLC film was processed with an electron cyclotron resonance (ECR) oxygen ion shower. However, we were not able to fabricate micro-gear patterns in high accuracy because of a remaining residual layer on the DLC film. Therefore we propose the removing process for the residual layer with trifluoromethane (CHF3) ion shower under the optimum conditions of 300 eV-ion energy and 4 min-etching time. As a result, we succeeded to fabricate concave DLC-based micro-gear patterns in high accuracy which has 30 µm-tip diameter and 1 µm-depth.

A temperature dependent Hall Effect measurement system with software based data acquisition and control was built and tested. Transport measurements are shown for boron-doped single crystal diamond (SCD) films deposited in a microwave plasma-assisted chemical vapor deposition (MPCVD) reactor. The influence of Ohmic contacts and temperature control accuracy are studied. For a temperature range of 300K-700K IV curves, Hall mobilities and carrier concentrations are presented.

Layered dielectric films comprising of Diamond like Carbon (DLC) and Amorphous Fluorocarbon (a:C-F) were generated using three different stack configurations for ultra low dielectric constant (ULK) applications. These include a DLC – a:C-F – DLC sandwich, a:C-F – DLC topcoat only and an annealed a:C-F – DLC topcoat only film stack. These films were subsequently evaluated for thickness, dielectric constant, contact angle, surface roughness and chemical structure using IR analysis. Thermal stability was analyzed after annealing in Argon ambient at 400°C for 1 hour. Deposition conditions were optimized for film thickness, roughness, dielectric constant and contact angle using Minitab by tuning process pressure, substrate temperature and FRR. The modified Gaseous Electronics Conference (mGEC) reference cell was used to deposit DLC films using CH4 and Argon as precursors. Structural properties of the deposited thin film were studied using laser excitation of 633 nm in a Jobin Yvon Labram high-resolution micro-Raman spectrometer. Multiple points on each sample were analyzed in terms of the disordered carbon (D-peak) and graphitic carbon (G-peak). The thin film of DLC was subsequently annealed in Ar ambient for 1 hr at 400°C and analyzed. Commercially available graphing software was utilized to deconvolute peaks and the ratio of their intensities as well as the shift in their positions were determined to characterize the as-deposited and annealed film. The film was further characterized using AFM, FTIR, XRD, goniometry and electrical testing. Average film roughness as measured by AFM was less than 1 nm, the k-value was 2.5 and the contact angle with water was 42°. A:C-F films were separately deposited using CF4 and Si2H6 (5% by volume in He) as precursors in a UNAXIS PECVD system. Films deposited using substrate temperatures between 120°C – 200°C, chamber pressure of 300 and 500 mTorr and power of 100 W were independently evaluated in terms of their electrical, physical, structural and optical properties prior to layering with DLC films. After process optimization, seven unique process conditions generated promising layered films with k-values between 1.69 and 1.95. Of these, only one film exhibited very low shrinkage rates acceptable for semiconductor device processing.

Due to its outstanding properties, diamond is considered as an ideal material for mechanical and electric applications at high temperatures, voltages, radiation, etc. It is known that femtosecond lasers exhibit extremely high precision and minimized thermal effect in material processing. In this study, a seed-free diamond pattern growth method was developed by patterning silicon substrates using a femtosecond laser before diamond deposition through laser-assisted combustion flame synthesis. The resolution of the diamond patterns reaches micro scales. Peak position, full width at half maximum (FWHM), and diamond quality parameter were calculated from Raman spectra. The mechanism of the seed-free diamond growth based on the femtosecond laser patterning was discussed. The influence of substrates surface roughness on the diamond nucleation and subsequent growth was studied, indicating that the nucleation density is proportional to the surface roughness.

To date, many studies have been carried out to investigate the use of semiconductive diamonds in industrial applications. In these studies, it has been necessary to deposit high-quality crystalline diamond thin films on large-area substrates. Hot-filament chemical vapor deposition (HFCVD) has been a useful method for generating these thin films. While large-area silicon (Si) substrates are easily obtainable and inexpensive and Si is a suitable material for the deposition of diamond thin films, because of the large mismatch of the lattice constants of Si and diamond, it is usually difficult to grow epitaxial diamond films on Si substrates. Therefore, insertion of a buffer layer comprised of a material with a lattice constant between those of Si and diamond is required. Silicon carbide (SiC), which is readily obtained by carbonization of the Si surface, is a candidate material for such a buffer layer. Therefore, in this study, a char layer was formed on a Si surface using HFCVD equipment and analyzed from various perspectives.

As an application to the nanoemitter, we investigated the nanofabrication of diamond-like carbon (DLC)-dot arrays by room-temperature curing imprint-liftoff (RTCIL) method using aluminum mask. The DLC film which has excellent properties similar to diamond properties was used as the patterning material. A polished glass like carbon (GC) was used as a mold material. The polysiloxane in the state of sticky liquid at room temperature and stable in air exhibits a negative-exposure characteristics. Therefore, the polysiloxane was used as electron beam (EB) resist and oxide mask material in EB lithography, and also used as RTC-imprint resist material. An aluminum was used as oxide metal mask material of liftoff. We have fabricated the GC mold of dot arrays with 5 µm-square and 500 nm-height. We carried out the RTCIL process using the GC mold under the following optimum imprint conditions: 0.5 MPa-imprinting pressure and 5 min- holding time. Aluminum film on the imprinted polysiloxane was prepared by vacuum evaporation method and its thickness is 20 nm. Finally, the polysiloxane patterns were removed with acetone and aluminum mask patterns were fabricated. We found that the maximum etching selectivity of aluminum film against DLC film was as high as 35, which was obtained under an ion energy of 400 eV. Then we processed the patterned aluminum on DLC film with an ECR oxygen ion shower. We fabricated DLC-dot arrays with 5 µm-square and 400 nm-height with an aspect ratio of 0.08.

Recently we postulated that polystyrene Petri dishes become soft when in contact with an aqueous milieu. Specifically, we assumed that the effect is restricted to a superficial nanolayer, a condition presumably favoring the establishment of a stable nanolayer of reactive oxygen species (ROS) at the liquid/solid-interface. Cells are known to be hypersensitive to ROS. Previously we used P19 mouse embryonal carcinoma cells and systematically analyzed their capability to climb different substrates placed vertically into a Petri dish. The worst and best performance was found on polystyrene (Petri dish material) and nanocrystalline diamond, respectively. Polystyrene Petri dishes are today standard in laboratories conducting in vitro fertilization (IVF). Here we proceed and extend the investigation to human spermatozoa and show that their performance (vitality) on polystyrene Petri dishes is low compared to that on diamond Petri dishes. This work may propel further research and inspire the development of a new generation of cell-friendly Petri dishes.

This paper presents the study of the electrochemical deposition of Cu/Sn alloy nanoparticles on Boron Doped Diamond (BDD) films in order to improve their electrocatalytic activity and selectivity for application in nitrate electrochemical reduction. Cyclic voltammetry measurements evidenced the formation of Cu/Sn alloy electrodeposited on BDD electrode. The electrodeposited Cu/Sn can be better visualized by analyzing the dissolution process. By studying the dissolution peak separately, the dissolution peak of the Sn was obtained at a more positive potential, when compared with the dissolution peak of Cu. From the scanning electronic microscopy (SEM) analysis, the homogeneous distribution of the Cu/Sn alloys particles on BDD surface with grain size in nanometric scale was verified. From X-ray diffraction analysis, two Cu/Sn alloy phases (Cu41Sn11 and Cu10Sn3) were identified for the electrodeposits obtained at -0.5V and charge of 0.26 C. The electrocatalytic reduction of nitrate in 0.1 M Britton-Robinson (BR) buffer solution with pH 9 was analyzed. The BDD electrode modified with Cu/Sn alloy nanoparticles proved to potentiate the electrocatalytic reduction of nitrate.

We summarized in this paper the fabrication, properties, and electrochemical applications of diamond nanostructures, mainly diamond nanotextures and diamond nanowires. The characterizations of nanostructures were introduced with different techniques. As example of applications, electrochemical DNA sensing and protein trapping on diamond nanotextures are shown.

We have investigated, using density functional simulations, the energetics and the electronic properties of oxides of selected transition metals, TMs, adsorbed onto a dia-mond (001) surface. We find that stoichiometric oxides of TMs, particularly Ti and Zn,influence the electron affinity of diamond strongly. The electron affinities of stoichiomet-ric oxides of Ti and Zn are calculated to be around −3 eV, significantly higher than 1.9 eV of commonly used H–termination. The reactions of TMs with an oxygenated diamond are found to be highly exothermic. Based upon the energetics and the electronic properties, we propose that in the regime of ultra thin films, oxides of TMs are promising options for surface coating of diamond–based electron emitters, as these coatings are compatible with semiconductor device fabrication processes, while having the benefit of inducing a large negative electron affinity.

The microfabrication technologiesfor organic light-emitting devices (OLEDs) are essential to the fabrication of the next generation of light-emitting devices. The micro-OLEDs fabricated by room-temperature curing nanoimprint lithography (RTC-NIL) using diamond molds have been investigated. However, light emissions from 10 μm-square-dot OLEDs fabricated by the RTC-NIL method have not been uniform. Therefore, we proposed the fabrication of micro-OLEDs by room-temperature curing nanocontact-print lithography (RTC-NCL) using the diamond-like carbon (DLC) mold. The DLC molds used in RTC-NCL were fabricated by an electron cyclotron resonance (ECR) oxygen ion shower with polysiloxane oxide mask in electron beam (EB) lithography technology. The mold patterns are square and rectangle dots which has 10 µm-width, 10 µm-width and50 µm-length, respectively. The height of the patterns is 500 nm. The DLC molds were used to form the insulating layer of polysiloxane in RTC-NCL. We carried out the RTC-NCL process using the DLC mold under the following optimum conditions: 0.1 MPa-pressure for coating DLC mold with polysiloxane film, 2.1 MPa-pressure for transferring polysiloxane from DLC mold pattern to indium tin oxide (ITO) glass substrate. We deposited N, N'-Diphenyl -N, N'-di (m-tolyl)benzidine (TPD) [40 nm-thickness] as hole transport layer / Tris(8-quinolinolato)aluminum (Alq3) [40 nm-thickness] as electron transport layer / Al [200 nm-thickness] as cathode on ITO glass substrateas anode in this order. We succeeded in formation of the insulating layer with square and rectangle dots which has 10 µm-width,10 µm-width and 50 µm-length, and operation of micro-OLEDs by RTC-NIL using DLC molds.

Nitrogen-vacancy (NV) center in diamond is an emerging system for quantum-logic device and sensor applications. The key feature of the NV center is the ability of spin manipulation at room temperature. We apply a wide range of electron irradiation to generate the NV centers in nitrogen-rich diamond for creating best sensitivity. The NV0 and NV─ concentrations in electron irradiated diamond are determined from optical spectra. Additionally, electron spin resonance (ESR) has also proven to be an effective method for probing the electron spin transition between |ms=±1> and |ms=0> states of the NV centers. A study of ESR frequency shift and signal broadening and magnetometer sensitivity as a function of electron irradiation dose has been conducted. The research presented herein is a demonstration of minimum detectable magnetic field tailoring required for future-generation high-sensitivity diamond magnetometry.

Experiments were performed to incorporate Li and N simultaneously into the diamond lattice during hot-filament chemical vapour deposition in an attempt to produce n-type semiconducting diamond with useful electronic characteristics. Microcrystalline diamond films were grown using a mixture of methane/ammonia/hydrogen gases with tantalum as the filament. The Li was added by placing crystals of lithium nitride (Li3N) on the substrate and allowing them to melt and then slowly diffuse into the film. SIMS depth profiles showed that this process produced high levels of Li and N (0.05% - 0.5%) situated in the same region within the diamond film. The crystallinity and morphology of diamond crystals produced were confirmed using laser Raman spectrometry and scanning electron microscopy.