X-ray reference powder patterns and structures have been determined for a series of cobalt- and tungsten-containing cubic alkaline-earth perovskites, (BaxSr1–x)2CoWO6 (x = 0.1, 0.2, 0.3, 0.5, 0.7, and 0.9). The structure of the end members of the series, Sr2CoWO6 and Ba2CoWO6, were tetragonal and cubic, respectively, agreeing with the literature data. From Rietveld refinements, it was found that when x = 0.1 and 0.2, the structure was tetragonal I4/m (a = 5.60481(6) and 5.62305(11) Å and c = 7.97989(12) and 7.9847(2) Å, respectively; Z = 2). When x > 0.2, the structure was cubic (Fm$\bar{3}$m, No. 225; Z = 4) (from x = 0.3 to 0.9, a increases from 7.98399(13) to 8.08871(10) Å). This tetragonal series of compounds exhibit the characteristics of a distorted double-perovskite structure. The bond valence sum values for the alkaline-earth (Ba, Sr) sites in all (BaxSr1−x)2CoWO6 members are greater than the ideal value of 2.0, indicating over-bonding situation, whereas for the W sites, as x increases, a change from under-bonding to slightly over-bonding situation was observed. Density functional theory calculations revealed that while Sr2CoWO6 is a semiconductor, Ba2CoWO6 and SrBaCoWO6 are half-metals. Powder X-ray diffraction patterns of this series of compounds (BaxSr1−x)2CoWO6, with x = 0.1, 0.2, 0.3, 0.5, 0.7, and 0.9, have been submitted to be included in the Powder Diffraction File.

In this work, the correlation between composition and relative evaporation field was investigated by tracking the statistics of multi-hit detector events in atom probe tomography (APT). This approach is applied systematically to a GaN-based nitride heterostructure with five AlxGa1−xN layers of varying Al composition. The relative field evaporation and the percentage of multi-hit events were found to increase with higher Al concentration. Furthermore, the comparison of the relative evaporation fields of AlN with respect to the constituent ions is found to be less than GaN with respect to its constituent ions. Despite equivalent compositions between opposing interfaces of the same AlxGa1−xN interlayer, the rate of change in multiplicity exhibits a consistent asymmetric trend with a steeper slope across the AlxGa1−xN/GaN interface compared to the GaN/AlxGa1−xN interface. The AlxGa1−xN/GaN heterostructure serves as a test structure for exploring field evaporation and neighborhood chemistry, which can be applied to any material chemistry and particularly other nitride systems.

Like many other American corporations, Intel was outcompeted in manufacturing by Japanese firms in the late 1970s and the first half of the 1980s. By 1985, it became clear that the corporation's weakness in production endangered its long-term survival. Responding to the Japanese challenge, Intel's upper management instigated a fundamental reform of manufacturing. At their behest, production engineers and managers adopted Japanese manufacturing technologies and operating procedures. They put microchip fabrication on a scientific footing. They developed new ways of transferring processes from development to production and standardized the firm's factories. This major transformation enabled Intel to reach manufacturing parity with Japanese chipmakers by the early 1990s.

Understanding and resolving discrepancies between atom probe tomography (APT) and secondary ion mass spectrometry (SIMS) measurements of B dopants in Si-based materials has long been a problem for those in the semiconductor community who wish to measure B within the source/drain SiGe of a device. APT data collection of Si-based materials is typically optimized for Si, which is logical, but perhaps not ideal for field evaporation of B. Increasing the evaporation field well beyond the typically used 28Si2+:28Si+ ratio of approximately 10:1 up to a ratio of ~200:1 is demonstrated to improve B detection while retaining well-matched Si and Ge concentrations with respect to those measured by SIMS. A range of evaporation conditions are examined from a very low field with high laser energy to an extremely high field with extremely low laser energy demonstrating problems at both far ends of the spectrum and a sweet spot when the operating conditions used produce a 28Si2+:28Si+ ratio of approximately 200:1 (in terms of total counts of each ionization state), which is more than an order of magnitude higher than normally used conditions and results in nicely matched B, Si, and Ge APT measurements with those of SIMS.

The crystal structure of the partially ordered vacancy compound Cu2In14/3□4/3Se8, belonging to the system I3-III7-□2-VI12, was analyzed using X-ray powder diffraction data. Several structural models were derived from the structure of the selenium-rich phase β-Cu0.39In1.2Se2 by permuting the cations in the available Wyckoff positions. The refinement of the best model by the Rietveld method in the tetragonal space group P$\overline 4 $ 2c (No 112), with unit-cell parameters a = 5.7487(3) Å, c = 11.5106(6) Å, V = 380.40(3) Å3, led to Rp = 9.0%, Rwp = 9.9%, Rexp = 7.2%, S = 1.4 for 134 independent reflections. This model has the following Wyckoff site atomic distribution: Cu in 2e (0,0,0); In in 2b (½,0,¼), 2d (0,½,¼), and 2f (½,½,0);□ in 2f (½,½,0); Se in 8n (x,y,z).

This paper presents the origin of digital information devices, the Silicon Audio, and its family. The Silicon Audio is the digital counterpart of the Walkman and the ancestor of the iPod. It employs the MPEG / Audio Layer II algorithm for data compression, which was standardized by ISO (International Standardization Organization)/ IEC (International Electrotechnical Commission). A semiconductor memory card is equipped with to store the compressed signal. Since it has no mechanical movement, it is robust against shocks and vibrations that had been a serious problem for portable audio players. The background of the development, implementations, challenges toward a commercial product, and impact on audio players as well as personal information devices are discussed with its family including a video derivative, the Silicon View.

The ultrafast dynamic process in semiconductor Ge irradiated by the femtosecond laser pulses is numerically simulated on the basis of van Driel system. It is found that with the increase of depth, the carrier density and lattice temperature decrease, while the carrier temperature first increases and then drops. The laser fluence has a great influence on the ultrafast dynamical process in Ge. As the laser fluence remains a constant value, though the overall evolution of the carrier density and lattice temperature is almost independent of pulse duration and laser intensity, increasing the laser intensity will be more effective than increasing the pulse duration in the generation of carriers. Irradiating the Ge sample by the femtosecond double pulses, the ultrafast dynamical process of semiconductor can be affected by the temporal interval between the double pulses.

New organic materials with semiconductor behavior were prepared from diphenyldiacetylene and aromatic amines with withdrawing groups by Reisch-Schulte reaction and characterized by IR, RMN spectroscopy. The obtained materials share the property of having electron withdrawing groups joint to the attached aromatic ring, it seems this feature accounts in large fashion to improve the semiconducting behavior of this kind of substances, this topic was studied by means theoretical calculations and the results are also discussed. The calculations were carried out by means the Gaussian09 software and all the involved species were geometrically optimized.

Double-filled high Fe content skutterudites, BaxYbyFe3CoSb12 (x + y = 1), were synthesized to investigate their high temperature transport properties. Both their phase and stoichiometry were characterized by powder x-ray diffraction and energy dispersive spectroscopy. The Seebeck coefficient, S, and electrical resistivity, ρ, increase with increasing temperature for all specimens over the entire measured temperature range. The thermal conductivity for the two low Ba content specimens decreases with increasing temperature up to 550 K at which point it increases with temperature due to bipolar diffusion. Bipolar diffusion becomes negligible with increasing Ba content. Due to this low bipolar diffusion, the ZT values of the higher Ba content specimens increase linearly with temperature, with the highest ZT value obtained for Ba0.9Yb0.1Fe3CoSb12.

The peculiarities of the Seebeck coefficient and power factor are studied in porous thermoelectric materials with spherical hollow pores of varying diameter from nanometer to micrometer length scales. The pores are assumed to be randomly dispersed throughout the matrix material. The influence of trap centers situated at pore interfaces on the power factor is investigated. Using the model based on gamma distribution of the pore sizes, the analytical expression is obtained for the power factor at the arbitrary level of the Fermi energy. Limiting cases of nondegenerate and degenerately doped porous semiconductors are examined as well. The results are compared with calculations for a multilayer composite in which each layer contains pores of a single length-scale. It is shown that the presence of hollow pores with multiscale hierarchical disorder leads to more considerable enhancement in the thermopower over its value in the bulk. Necessary conditions for the enhancement of the power factor are found.

Methods for the solution deposition of organic semiconductors (OSCs) show great potential for the production of large-area, inexpensive, and flexible organic electronics. A solution deposition method called solution shearing has consistently been shown to yield thin film transistors with improved performance over those created via other solution-based approaches. However, the need for discrete, electronically isolated devices requires the parallel development of a facile means of pattern definition compatible with the solution shearing process. In our work, we use a simple chemical prepatterning method to enable the solution shearing deposition of the small molecule OSC TIPS-pentacene on substrates with feature sizes as small as 100 µm. Grazing incidence x-ray diffraction (GIXD) was also used to confirm the existence of high performance TIPS-pentacene polymorphs in the patterned thin films. Mobilities as high as 1.13 cm2 V−1 s−1 were obtained on 400 µm wide patterns by depositing a high-performance, metastable polymorph of TIPS-pentacene.

Given an unknown multicomponent alloy, and a set of standard compounds or alloys of known composition, can one improve upon popular standards-based methods for energy dispersive X-ray (EDX) spectrometry to quantify the elemental composition of the unknown specimen? A method is presented here for determining elemental composition of alloys using transmission electron microscopy–based EDX with appropriate standards. The method begins with a discrete set of related reference standards of known composition, applies multivariate statistical analysis to those spectra, and evaluates the compositions with a linear matrix algebra method to relate the spectra to elemental composition. By using associated standards, only limited assumptions about the physical origins of the EDX spectra are needed. Spectral absorption corrections can be performed by providing an estimate of the foil thickness of one or more reference standards. The technique was applied to III-V multicomponent alloy thin films: composition and foil thickness were determined for various III-V alloys. The results were then validated by comparing with X-ray diffraction and photoluminescence analysis, demonstrating accuracy of approximately 1% in atomic fraction.

The ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.

Nanoparticles of Cd1–xCuxS (x = 0–0.15) were synthesized by chemical coprecipitation using thiophenol as a capping agent. The x-ray diffraction patterns reveal that the pure and doped CdS nanoparticles are single phase with cubic zinc blende structure. The transmission electron microscopy shows the average size of the nanoparticles is about 8.5 nm. Optical absorption spectra indicate the energy gap decreases with increasing Cu2+ concentration. The broad emission peak around 520 nm is completely quenched with increasing Cu2+ content. The electron spin resonance analysis also confirms the Cu (II) ion to be doped substitutionally in CdS nanoparticles and the Lande factor of all the samples with sharp resonance is g = 2.0.

The applicability of atom probe to the characterization of photovoltaic devices is presented with special emphasis on high efficiency III–V and low cost ITO/a-Si:H heterojunction cells. Laser pulsed atom probe is shown to enable subnanometer chemical and structural depth profiling of interfaces in III–V heterojunction cells. Hydrogen, oxygen, and phosphorus chemical profiling in 5-nm-thick a-Si heterojunction cells is also illustrated, along with compositional analysis of the ITO/a-Si interface. Detection limits of atom probe tomography useful to semiconductor devices are also discussed. Gaining information about interfacial abruptness, roughness, and dopant profiles will allow for the determination of semiconductor conductivity, junction depletion widths, and ultimately photocurrent collection efficiencies and fill factors.

The following article is an edited transcript based on the David Turnbull Lecture given by Eugene E. Haller (University of California, Berkeley) at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his “pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations.”

The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies of isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin–film heterostructures. Isotopic composition affects several properties, such as phonon energies, band structure, and lattice constant, in subtle, yet—for their physical understanding–significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photo-luminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for studies of simultaneous self-and dopant-diffusion. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem, in which moving atoms go in random directions at random intervals. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

To investigate the effect of plasma-incorporated fluorine on Si donors in pseudomorphic-high electron mobility transistors (P-HEMTs), we used x-ray photoemission spectroscopy to analyze three layers near the Si δ-doped layer and the Si δ-doped layer itself, in which we previously found fluorine accumulation after post-thermal annealing following fluorocarbon-based plasma exposure. For this evaluation, we developed controllable and low-speed AlGaAs wet-chemical etching using citric-acid-based wet etchant. We used it to expose one of the layers to be analyzed: one 7.5 nm above the Si δ-doped layer, one 1.5 nm above it, the δ-doped layer itself, and one 1.5 nm below it. We found that the accumulated fluorine localized in the δ-doped layer and reacted with Si donors. This is apparently the main reason for the carrier passivation in the fluorocarbon-based plasma-exposed P-HEMTs.

Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.