In this paper, the Ni-decorated ZnO photocatalysts with magnetic separable characteristics were prepared by a simple replacing-hydrothermal process for the first time. The as-synthesized composites were characterized by powder x-ray diffraction, UV–visible diffuse reflectance spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscope, transmission electron microscopy, and so on. It is found that the introduction of Ni (as Ni0 and Ni2+ forms) turned the morphologies of ZnO photocatalysts, enhanced photoabsorption in a visible light region, and increased amount of surface adsorbed oxygen. The photodegradation test of anthraquinone dye (reactive brilliant blue KN-R) indicated that the Ni-decorated ZnO photocatalysts have better activities as compared to the ZnO reference. The enhancement of photocatalytic activity of Ni-decorated ZnO photocatalysts can be attributed to the existence of Ni2+ doping, Ni0/ZnO heterostructure, and abundant-adsorbed oxygen (as the electronic scavenges), which caused efficient separation of electron–hole pairs in Ni-decorated ZnO photocatalysts. Furthermore, the introduction of metallic Ni also endued ZnO with good magnetic recoverability. The re-collected experiments by external magnetic field indicated that Ni-decorated ZnO as a magnetically recoverable photocatalyst is acceptable.

In this study, the authors have comparatively studied the influence of H2 addition on the structures and properties of ZnO films grown by metal organic (MO) chemical vapor deposition with dimethyl zinc and diethyl zinc as zinc precursors and N2O and O2 as oxygen sources, respectively. Various characterization methods, like x-ray diffraction, Raman scattering, Hall effect, photoluminescence, and atomic force microscopy, have been utilized, showing that H2 has different effects on different MO precursors and oxidants. The H2 addition has significantly improved the crystal structural quality of ZnO thin films for the case of dimethyl zinc source, but an opposite effect has been found for the case of diethyl zinc. Moreover, the H2 addition can significantly improve the optical properties of the ZnO films, regardless of the zinc MO sources used, with the surface morphology improved too. The suppression of carbon-related contaminations depends on the use of different precursors and whether H2 is added. By analyzing the experimental results, we have given the effects of H2 on the decomposition of the discussed MO precursors and oxidants, the proposed mechanism could be used in understanding the experimental data.

Visible light emitting ZnO quantum dots (QDs) were synthesized by a modified sol–gel method and in situ coated with the amino acid cysteine to modify their surface chemistry and govern the crystal growth process. Surface chelation by a hydrophilic thiol such as cysteine offered a fine control over the particle size and modulated the optical emission and its stability by reducing the density of surfacial oxygen deficiencies and also induced the formation of hierarchical nanostructures in the solution. TEM and XRD results confirmed the formation of mono-dispersed and spherical ZnO QDs in the size range 2.5–3.8 nm. The modulation of band gap energies was manifested in the visible emission of cysteine modified QDs, which was found to be remarkably stable for cell labeling applications, when compared to the photoluminescence of conventional ZnO QDs.

X-ray photoemission spectroscopy using synchrotron radiation from 100 to 1486.6 eV was used to investigate polarity-dependent differences between the Zn-polar (0001) and the O-polar () faces of ultrahigh vacuum cleaved hydrothermally grown ZnO single crystals. The cleaved polar surfaces showed a characteristic polarity effect in that the intensity of emission from the lowest binding energy O 2p related valence band states was significantly stronger on the Zn-polar face, even when the cleaved surfaces were imperfect with irregular nonatomically flat features. A residual submonolayer hydroxyl termination of approximately 0.5 ML was observed on both the Zn-polar and O-polar surfaces immediately after cleaving. The near-surface downward band bending on the O-polar face was removed by the cleaving process leaving almost flat bands, while on the cleaved Zn-polar face, emission from states above the valence band edge was observed.

Nanocrystals of Zn1−xMxO (M=Mn, Co, or Ni) were grown using proteic sol-gel process, and the crystalline phases were identified by X-ray diffraction and Rietveld refinement. The nanocrystals have hexagonal wurtzite structure, with space group P63mc. The insertion of Mn2+ in the place of Zn2+ provoked an increase in the size of the nanocrystals, and the insertion of Co2+ or Ni2+ caused a reduction in the sizes of the nanocrystals, as compared to pure ZnO. This occurred because these three transition metals have very different ionic radii (Co2+=0.58 A˚, Mn2+=0.66 A˚, Ni2+=0.55 A˚, and Zn2+=0.60 A˚).

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.

A general least-squares technique for X-ray diffraction line broadening analysis has been developed. The technique can be used to determine single, double, and triple line broadening effects caused by small particle sizes, microstrain, stacking faults, or all three presented in a closed-packed hexagonal nanomaterial. The technique was applied to characterize the microstructure of β-Ni(OH)2, a negative electrode material in nickel-metal hydride (NiMH) batteries. Double line broadening effects caused by both small crystallite sizes and stacking faults in β-Ni(OH)2 were detected and analyzed. Triple line broadening effects caused simultaneously by small crystallite sizes, microstrain, and stacking faults were detected in β-Ni(OH)2 after activation and charge-discharge cycle tests. The triple line broadening effects were found to be selective and most pronounced for diffraction lines with h−k=3n±1. The broadening effects were larger when l=even, but smaller when l=odd. The shape and the average size of the crystallites, microstrain, and stacking fault probability in β-Ni(OH)2 changed dramatically after activation and charge-discharge cycles. The method was also applied to characterize and investigate the microstructure of nano ZnO materials. Results indicate that no selective broadening appears in the XRD patterns of the nano ZnO materials. The average crystallite sizes were different slightly, and the stacking fault probabilities differed significantly with different dopants.

Molecular Dynamics (MD) simulations are performed to calculate the interfacial energy between zinc oxide (ZnO) and graphitic carbon for the study of solid–solid adhesion. The MD model consists of a ZnO slab and a single layer of graphitic carbon. The calculation was validated experimentally by atomic force microscopy (AFM) liftoff. A polishing process was applied to create a tip with a flat surface that was subsequently coated with a ZnO film allowing force displacement measurement on Highly Oriented Pyrolitic Graphite to validate the simulations. The MD simulation and AFM lift-off show good agreement with adhesive energies of 0.303 J/m2 and 0.261 ± 0.054 J/m2, respectively.

The aberration-corrected scanning transmission electron microscope can provide information on nanostructures with sub-Ångström image resolution. The relatively intuitive interpretation of high-angle annular dark-field (HAADF) imaging technique makes it a popular tool to image a variety of samples and finds broad applications to characterizing nanostructures, especially when combined with electron energy-loss spectroscopy and X-ray energy-dispersive spectroscopy techniques. To quantitatively interpret HAADF images, however, requires full understanding of the various types of signals that contribute to the HAADF image contrast. We have observed significant intensity enhancement in HAADF images, and large expansion of lattice spacings, of surface atoms of atomically flat ZnO surfaces. The surface-resonance channeling effect, one of the electron-beam channeling phenomena in crystalline nanostructures, was invoked to explain the observed image intensity enhancement. A better understanding of the effect of electron beam channeling along surfaces or interfaces on HAADF image contrast may have implications for quantifying HAADF images and may provide new routes to utilize the channeling phenomenon to study surface structures with sub-Ångström spatial resolution.

In this paper, measurement of various plasma parameters during pulsed laser deposition of ZnO thin films on Si (100) substrates is reported. The variations of electron number density and electron temperature with ambient pressure and target substrate distance is obtained via spectroscopic measurements. The structural and optical properties of ZnO thin films were analyzed using X-ray diffraction, scanning electron microscope, and photoluminescence and then correlated with spectroscopic results to find optimum conditions for the deposition of high quality ZnO thin films.

Zinc oxide is known to produce a wide variety of nanostructures that show promise for a number of applications. The use of electrochemical deposition techniques for growing ZnO nanostructures can allow tight control of the morphology of ZnO through the wide range of deposition parameters available. Here we model the growth of the rods under typical electrochemical conditions, using the Nernst–Planck equations in two dimensions to predict the growth rate and morphology of the nanostructures as a function of time. Generally good quantitative and qualitative agreement is found between the model predictions and recent experimental results.

Poly-crystal ZnO films with c-axis (002) orientation have been successfully grown on the lead-based ceramic substrates by r.f. magnetron sputtering technique. The deposited films were characterized as a function of deposition time and argon-oxygen gas flow ratio. Crystalline structures of the films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Highly oriented films with c-axis normal to the substrates can be obtained by depositing under a total pressure of 10mTorr containing 50% argon and 50% oxygen and r.f. power of 70W for 3 hours. The phase velocity, electromechanical coupling coefficient and temperature coefficient of frequency of SAW device with ZnO/IDT/PT-ceramic structure were investigated. It shows that the preferred oriented ZnO film is beneficial for improving the electromechanical coupling coefficient of SAW device.

We have recently reported the synthesis of one-dimensional nanobelt structures of ZnO, SnO2, In2O3, CdO, Ga2O3, and PbO2 by evaporating the desired commercial metal oxide powders at high temperatures (Science (2001), 291, 1947). The as-synthesized oxide nanobelts are pure, structurally uniform, single crystalline, and most of them free from dislocations. The beltlike morphology appears to be a unique and common structural characteristic for the family of semiconducting oxides. In the present article, we focus on the twin and stacking fault planar defects found in oxide nanobelts and nanowires although they are rarely observed. Some interesting and unique growth morphologies are presented to illustrate the roles played by surface energy and kinetics in growth. It is shown that the surfaces of the oxide nanobelts are enclosed by the low-index, low-energy crystallographic facets. The growth morphology is largely dominated by the growth kinetics.

We have used plasma molecular beam epitaxy on (0 0 0 1) and (0 0 0 ) ZnO substrates to induce epitaxial growth of GaN of a known polarity. The polarity of the ZnO substrates can be easily and unambiguously determined by measuring the sign of the piezoelectric coefficient. If we assume that N-face GaN grows on O face ZnO and that Ga-face GaN grows on Zn face ZnO, then we can study the growth of both Ga and N faces. The most striking difference is the doping behavior of the two faces. Growth on the Ga-face is characterized by a higher carrier concentration and a lower threshold for Ga droplet formation.