Elevated temperature co-sputtering of immiscible elements results in a variety of self-organized morphologies due to phase separation. Cu–Ta is used as a model system to understand the evolution of phase-separated microstructural morphologies by co-sputtering thin films with nominal 50–50 at.% composition at four temperatures: 25, 400, 600, and 800 °C. Scanning/transmission electron microscopy of the film cross sections showed the microstructure morphology varied from nanocrystalline Cu–Ta at 25 °C to a wavy ribbon-like structure at 400 °C, to Cu-rich agglomerates surrounded by Ta-rich veins at 600 and 800 °C. In the agglomerate-vein morphology, microstructural features were present on two length scales, from a few nanometers to a few tens of nanometers, thus making the structures hierarchical. On the nanoscale, the Cu-rich agglomerates contained Ta precipitates, whereas the Ta-rich veins had embedded Cu nanocrystals. The various microstructures can be attributed to the highly disparate constituent element interdiffusion at the deposition temperatures with the Cu having orders of magnitude higher mobility than Ta at the deposition temperatures. This study of processing–microstructure relationship will be useful in guiding the design of hierarchical multiphase microstructures in binary or multicomponent thin films with tailored mechanical properties.

Thermal-barrier coatings (TBCs) are complex, defected, thick films made of zirconia-based refractory ceramic oxides. Their widespread applicability has necessitated development of high throughput, low cost materials manufacturing technologies. Thermal plasmas and electron beams have been the primary energy sources for processing of such systems. Electron-beam physical vapor deposition (EBPVD) is a sophisticated TBC fabrication technology for rotating parts of aero engine components, while atmospheric plasma sprays (APS) span the range from rotating blades of large power generation turbines to afterburners in supersonic propulsion engines. This article presents a scientific description of both contemporary manufacturing processes (EBPVD, APS) and emerging TBC deposition technologies based on novel extensions to plasma technology (suspension spray, plasma spray-PVD) to facilitate novel compliant and low thermal conductivity coating architectures. TBCs are of vital importance to both performance and energy efficiency of modern turbines with concomitant needs in process control for both advanced design and reliable manufacturing.

Gas-turbine engines used in transportation, energy, and defense sectors rely on high-temperature thermal-barrier coatings (TBCs) for improved efficiencies and power. The promise of still higher efficiencies and other benefits is driving TBCs research and development worldwide. An introduction to TBCs—complex, multi-layer evolving systems—is presented, where these fascinating systems touch on several known phenomena in materials science and engineering. Critical elements identified as being important to the development of future TBCs form the basis for the five articles in this issue of MRS Bulletin. These articles are introduced, together with a discussion of the major challenges to improved coating development and the rich opportunities for materials research they provide.

High-power impulse magnetron sputtering (HiPIMS) is a promising sputtering-based ionized physical vapor deposition technique and is already making its way to industrial applications. The major difference between HiPIMS and conventional magnetron sputtering processes is the mode of operation. In HiPIMS the power is applied to the magnetron (target) in unipolar pulses at a low duty factor (<10%) and low frequency (<10 kHz) leading to peak target power densities of the order of several kilowatts per square centimeter while keeping the average target power density low enough to avoid magnetron overheating and target melting. These conditions result in the generation of a highly dense plasma discharge, where a large fraction of the sputtered material is ionized and thereby providing new and added means for the synthesis of tailor-made thin films. In this review, the features distinguishing HiPIMS from other deposition methods will be addressed in detail along with how they influence the deposition conditions, such as the plasma parameters and the sputtered material, as well as the resulting thin film properties, such as microstructure, phase formation, and chemical composition. General trends will be established in conjunction to industrially relevant material systems to present this emerging technology to the interested reader.

The residual stress in Al–Cu–Fe–B quasicrystalline thin films has been characterized by x-ray diffraction and the curvature method. Films with thicknesses in a range from 0.55 to 2.6 μm were deposited using magnetron sputtering on Si(100) substrates maintained at a temperature of 560 °C. It is found that the tensile stress in uncracked films as determined by the curvature method is close to that measured by a modified sin2ψ method using main diffraction peaks of the icosahedral structure and corresponds approximately to 1.1 GPa. This value is close to that of the thermal stress estimated from the mismatch between thermal expansion coefficients of the film and substrate, suggesting that thermal stress is the main source of residual stress. Increasing film thickness results in the development of cracks and partial delamination of the film, accompanied by the sudden decrease of the stress. The fracture toughness of the quasicrystalline films is estimated between 1.5 and 1.9 MPa.

Transparent conducting oxide films are usually several 100-nm thick to achieve the required low sheet resistance. In this study, we show that the filtered cathodic arc technique produces high-quality low-cost ZnO:Al material for comparably smaller thicknesses than achieved by magnetron sputtering, making arc deposition a promising choice for applications requiring films less than 100-nm thick. A mean surface roughness less than 1 nm is observed for ZnO:Al films less than 100-nm thick, and 35-nm-thick ZnO:Al films exhibit Hall mobility of 28 cm2/Vs and a low resistivity of 6.5 × 10−4 Ωcm. Resistivity as low as 5.2 × 10−4 Ωcm and mobility as high as 43.5 cm2/Vs are obtained for 135-nm films.

We have demonstrated that the microstructure of thick pentaerythritol tetranitrate (PETN) films can be controlled using physical vapor deposition by varying the film/substrate interface. PETN films were deposited on silicon and fused silica with and without a thin layer of sputtered aluminum to demonstrate the effects of the interface on subsequent film growth. Evolution of surface morphology, average density, and surface roughness as a function of film thickness were characterized using surface profilometry, scanning electron microscopy, and atomic force microscopy. Significant variations in density, pore size, and surface morphology were observed in films deposited on the different substrates. In addition, x-ray diffraction experiments showed that while films deposited on bare fused silica or silicon had only weak texturing, films deposited on a sputtered aluminum layer were highly oriented, with a strong (110) out-of-plane texture.

Ti–Si–C–N thin films were deposited onto WC-Co substrates by industrial scale arc evaporation from Ti3SiC2 compound cathodes in N2 gas. Microstructure and hardness were found to be highly dependent on the wide range of film compositions attained, comprising up to 12 at.% Si and 16 at.% C. Nonreactive deposition yielded films consisting of understoichiometric TiCx, Ti, and silicide phases with high (27 GPa) hardness. At a nitrogen pressure of 0.25–0.5 Pa, below that required for N saturation, superhard, 45–50 GPa, (Ti,Si)(C,N) films with a nanocrystalline feathered structure were formed. Films grown above 2 Pa displayed crystalline phases of more pronounced nitride character, but with C and Si segregated to grain boundaries to form weak grain boundary phases. In abundance of N, the combined presence of Si and C disturbs cubic phase growth severely and compromises the mechanical strength of the films.

As-deposited thin films grown by vapor deposition often exhibit large intrinsic stresses that can lead to film failure. While this is an “old” materials problem, our understanding has only recently begun to evolve in a more sophisticated fashion. Sensitive real-time measurements of stress evolution during thin-film deposition reveal a generic compressive–tensile–compressive behavior that correlates with island nucleation and growth, island coalescence, and postcoalescence film growth. In this article, we review the fundamental mechanisms that can generate stresses during the growth of Volmer–Weber thin films. Compressive stresses in both discontinuous and continuous films are generated by surface-stress effects. Tensile stresses are created during island coalescence and grain growth. Compressive stresses can also result from the flux-driven incorporation of excess atoms within grain boundaries. While significant progress has been made in this field recently, further modeling and experimentation are needed to quantitatively sort out the importance of the different mechanisms to the overall behavior.