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Physical Origins of Intrinsic Stresses in Volmer–Weber Thin Films

Published online by Cambridge University Press:  31 January 2011

Jerrold A. Floro ,
Eric Chason ,
Robert C. Cammarata  and
David J. Srolovitz
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Abstract

As-deposited thin films grown by vapor deposition often exhibit large intrinsic stresses that can lead to film failure. While this is an “old” materials problem, our understanding has only recently begun to evolve in a more sophisticated fashion. Sensitive real-time measurements of stress evolution during thin-film deposition reveal a generic compressive–tensile–compressive behavior that correlates with island nucleation and growth, island coalescence, and postcoalescence film growth. In this article, we review the fundamental mechanisms that can generate stresses during the growth of Volmer–Weber thin films. Compressive stresses in both discontinuous and continuous films are generated by surface-stress effects. Tensile stresses are created during island coalescence and grain growth. Compressive stresses can also result from the flux-driven incorporation of excess atoms within grain boundaries. While significant progress has been made in this field recently, further modeling and experimentation are needed to quantitatively sort out the importance of the different mechanisms to the overall behavior.

Keywords

intrinsic stressphysical vapor depositionthin films.
Type
Research Article
Information
MRS Bulletin , Volume 27 , Issue 1: Mechanical Properties in Small Dimensions , January 2002 , pp. 19 - 25
Copyright
Copyright © Materials Research Society 2002

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References

1. See references in Stoney, G.G., Proc. R.Soc. London, Ser. A 82 (1909) p. 172.Google Scholar
2.Doerner, M.F. and Nix, W.D., CRC Crit. Rev. Solid State Mater. Sci. 14 (1988) p. 225.Google Scholar
3.Nix, W.D., Metall. Trans. A 20A (1989) p. 2217.CrossRefGoogle Scholar
4.Floro, J.A. and Chason, E., in In Situ RealTime Characterization of Thin Films, edited by Auciello, O. and Krauss, A.R. (John Wiley & Sons, New York, 2001) p. 191.Google Scholar
5.Flinn, P.A., Gardner, D.S., and Nix, W.D., IEEE Trans. Electron Devices ED–34 (1987) p. 689.CrossRefGoogle Scholar
6. See the list of references in Koch, R., J. Phys.: Condens. Matter 6 (1994) p. 9519.Google Scholar
7.Floro, J.A., Hearne, S.J., Hunter, J.A., Kotula, P., Chason, E., Seel, S.C., and Thompson, C.V., J. Appl. Phys. 89 (2001) p. 4886.CrossRefGoogle Scholar
8.Shull, A.L. and Spaepen, F., J. Appl. Phys. 80 (1996) p. 6243.Google Scholar
9.Cammarata, R.C., Prog. Surf. Sci. 46 (1994) p. 1.Google Scholar
10.Cammarata, R.C., Trimble, T.M., and Srolovitz, D.J., J. Mater. Res. 15 (2000) p. 2468.Google Scholar
11. While surface stresses are frequently tensile, β can be either positive or negative depending on the material and crystallographic orientation of the island; see Reference 10.Google Scholar
12.Hoffman, R.W., Thin Solid Films 34 (1976) p. 185.Google Scholar
13.Nix, W.D. and Clemens, B.M., J. Mater. Res. 14 (1999) p. 3467.CrossRefGoogle Scholar
14.Freund, L.B. and Chason, E., J. Appl. Phys. 89 (2001) p. 4866.Google Scholar
15.Johnson, K.L., Contact Mechanics (Cambridge University Press, Cambridge, UK, 1985).CrossRefGoogle Scholar
16.Seel, S.C., Thompson, C.V., Hearne, S.J., and Floro, J.A., J. Appl. Phys. 88 (2000) p. 7079.Google Scholar
17.Sheldon, B.W., Lau, A., and Rajamani, A., J. Appl. Phys. 90 (2001) p. 5097.CrossRefGoogle Scholar
18.Thompson, C.V., J. Mater. Res. 8 (1993) p. 237.CrossRefGoogle Scholar
19.Thompson, C.V., Annu. Rev. Mater. Sci. 20 (1990) p. 245.Google Scholar
20.Chaudhari, P., J. Vac. Sci. Technol. 9 (1972) p. 520.CrossRefGoogle Scholar
21.Lee, H., PhD thesis, Stanford University, 2001.Google Scholar
22.Floro, J.A., Thompson, C.V., Carel, R., and Bristowe, P.D., J. Mater. Res. 9 (1994) p. 2411.CrossRefGoogle Scholar
23.Zielinski, E.M., Vinci, R.P., and Bravman, J.C., J. Appl. Phys. 76 (1994) p. 4516.CrossRefGoogle Scholar
24.Sanchez, J.E. Jr and Arzt, E., Scripta Metall. Mater. 27 (1992) p. 285.CrossRefGoogle Scholar
25.Ramaswamy, V. PhD thesis, Stanford University, 2000.Google Scholar
26.Chason, E., Sheldon, B.W., Freund, L.B., Floro, J.A., and Hearne, S.J., Phys. Rev. Lett. (2001) submitted for publication.Google Scholar
27.Thouless, M.D., Acta Metall. Mater. 41 (1993) p. 1057.CrossRefGoogle Scholar