Book contents
- Frontmatter
- Contents
- List of contributors
- Preface
- 1 Introduction
- 2 DC and thermal modeling: III–V FETs and HBTs
- 3 Extrinsic parameter and parasitic elements in III–V HBT and HEMT modeling
- 4 Uncertainties in small-signal equivalent circuit modeling
- 5 The large-signal model: theoretical foundations, practical considerations, and recent trends
- 6 Large and packaged transistors
- 7 Nonlinear characterization and modeling of dispersive effects in high-frequency power transistors
- 8 Optimizing microwave measurements for model construction and validation
- 9 Practical statistical simulation for efficient circuit design
- 10 Noise modeling
- Index
Index
Published online by Cambridge University Press: 25 October 2011
Book contents
- Frontmatter
- Contents
- List of contributors
- Preface
- 1 Introduction
- 2 DC and thermal modeling: III–V FETs and HBTs
- 3 Extrinsic parameter and parasitic elements in III–V HBT and HEMT modeling
- 4 Uncertainties in small-signal equivalent circuit modeling
- 5 The large-signal model: theoretical foundations, practical considerations, and recent trends
- 6 Large and packaged transistors
- 7 Nonlinear characterization and modeling of dispersive effects in high-frequency power transistors
- 8 Optimizing microwave measurements for model construction and validation
- 9 Practical statistical simulation for efficient circuit design
- 10 Noise modeling
- Index
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- Information
- Nonlinear Transistor Model Parameter Extraction Techniques , pp. 350 - 352Publisher: Cambridge University PressPrint publication year: 2011