Crossref Citations
This Book has been
cited by the following publications. This list is generated based on data provided by Crossref.
Guerrieri, Simona Donati
Ramella, Chiara
Bonani, Fabrizio
and
Ghione, Giovanni
2019.
Efficient Sensitivity and Variability Analysis of Nonlinear Microwave Stages Through Concurrent TCAD and EM Modeling.
IEEE Journal on Multiscale and Multiphysics Computational Techniques,
Vol. 4,
Issue. ,
p.
356.
Guerrieri, S. Donati
Ramella, C.
Bonani, F.
and
Ghione, G.
2020.
PA design and statistical analysis through X-par driven load-pull and EM simulations.
p.
1.
Martin-Guerrero, Teresa M.
Santarelli, Alberto
Gibiino, Gian Piero
Traverso, Pier Andrea
Camacho-Penalosa, Carlos
and
Filicori, Fabio
2020.
Automatic Extraction of Measurement-Based Large-Signal FET Models by Nonlinear Function Sampling.
IEEE Transactions on Microwave Theory and Techniques,
Vol. 68,
Issue. 5,
p.
1627.
Martin-Guerrero, Teresa M.
Santarelli, Alberto
Gibiino, Gian Piero
Traverso, Pier Andrea
Camacho-Penalosa, Carlos
and
Filicori, Fabio
2020.
Measurement-Based FET Analytical Modeling Using the Nonlinear Function Sampling Approach.
IEEE Microwave and Wireless Components Letters,
Vol. 30,
Issue. 12,
p.
1145.
King, Justin B.
2021.
Efficientenergy‐conservativedispersive transistor modelling usingdiscrete‐timeconvolution and artificial neural networks.
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields,
Vol. 34,
Issue. 5,
Sahrling, Mikael
2021.
Analog Circuit Simulators for Integrated Circuit Designers.
p.
157.
Hart, Pascal A. lt
van Staveren, Job
Sebastiano, Fabio
Xu, Jianjun
Root, David E.
and
Babaie, Masoud
2021.
Artificial Neural Network Modelling for Cryo-CMOS Devices.
p.
1.
Sahrling, Mikael
2021.
Analog Circuit Simulators for Integrated Circuit Designers.
p.
329.
Pedro, Jose
Gomes, Joao
and
Nunes, Luis
2021.
Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTs.
p.
1.
Sahrling, Mikael
2021.
Analog Circuit Simulators for Integrated Circuit Designers.
p.
5.
Luo, Haorui
Yan, Xu
Zhang, Jingyuan
and
Guo, Yongxin
2022.
A Neural Network-Based Hybrid Physical Model for GaN HEMTs.
IEEE Transactions on Microwave Theory and Techniques,
Vol. 70,
Issue. 11,
p.
4816.
Peng, Kaidong
Poore, Rick
Krantz, Philip
Root, David E.
and
O'Brien, Kevin P.
2022.
X-parameter based design and simulation of Josephson traveling-wave parametric amplifiers for quantum computing applications.
p.
331.
Gomes, Joao L.
Nunes, Luis C.
Barradas, Filipe M.
and
Pedro, Jose C.
2022.
A Qualitative Explanation of the AlGaN/GaN HEMT Nonlinear Intrinsic Capacitances.
p.
1.
M. Kast, Joshua
and
Elsherbeni, Atef Z.
2022.
Advances in Time‐Domain Computational Electromagnetic Methods.
p.
1.
Singh, Dilbagh
Salter, Martin J.
Johny, Susan
and
Ridler, Nick M.
2022.
Uncertainties in Small-Signal and Large-Signal Measurements of RF Amplifiers Using a VNA.
IEEE Instrumentation & Measurement Magazine,
Vol. 25,
Issue. 6,
p.
37.
Martinez, Rafael Perez
Iwamoto, Masaya
Xu, Jianjun
Pahl, Philipp
and
Chowdhury, Srabanti
2023.
Benchmarking Measurement-Based Large-Signal FET Models for GaN HEMT Devices.
p.
69.
Gomes, João L.
Barradas, Filipe M.
Nunes, Luís C.
and
Pedro, José C.
2023.
On the Energy Nonconservation in the FET’s Equivalent Circuit Capacitance Model.
IEEE Transactions on Electron Devices,
Vol. 70,
Issue. 9,
p.
4808.
Bisquert, Juan
2023.
Current-controlled memristors: Resistive switching systems with negative capacitance and inverted hysteresis.
Physical Review Applied,
Vol. 20,
Issue. 4,
Martinez, Rafael Perez
Iwamoto, Masaya
Morgado, Ana M. Banzer
Li, Yiao
Tinti, Roberto
Xu, Jianjun
Gillease, Chad
Cochran, Steven
Shankar, Bhawani
Schmidt, Else-Marie
Song, Zijian
Wagner, Natalie
Pahl, Philipp
Petr, Alexander
and
Chowdhury, Srabanti
2024.
A Hybrid Physical ASM-HEMT Model Using a Neural Network-Based Methodology.
p.
38.
Perez Martinez, Rafael
Iwamoto, Masaya
Xu, Jianjun
Gillease, Chad
Cochran, Steven
Culver, Morgan
Cognata, Alex
Wagner, Natalie S.
Pahl, Philipp
and
Chowdhury, Srabanti
2024.
Assessment and Comparison of Measurement-Based Large-Signal FET Models for GaN HEMTs.
IEEE Transactions on Microwave Theory and Techniques,
Vol. 72,
Issue. 5,
p.
2692.