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Published online by Cambridge University Press: 06 March 2019
The results of an experimental study on residual stresses within the encapsulation layers of electronic components are described. For this study, silicon wafers were coated with a flexibilized cycloaliphatic formulation filled with 30 and 40 (vol.) % of Cu particles. The residual stresses were determined by measuring the radii of curvature of the encapsulated wafers. The stress in the Cu particles at the surface was also measured by X-Ray diffraction. It was seen that the stresses within the structure are primarily macro-stresses, with little stress present within the Cu particles. Comparison of the experimental values to those calculated from linear elasticity theory also indicate relaxation within the composite during curing.