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Characterization of Epitaxial High Tc Superconductors using a Parallel Beam X-Ray Diffractometer

Published online by Cambridge University Press:  06 March 2019

E. Houtman ,
T.W. Ryan ,
B. David  and
V. Doormann
E. Houtman
Affiliation:
Philips Analytical Almelo, The Netherlands
T.W. Ryan
Affiliation:
Philips Analytical Almelo, The Netherlands
B. David
Affiliation:
Philips Research Laboratories, Hamburg, FRG
V. Doormann
Affiliation:
Philips Research Laboratories, Hamburg, FRG
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Abstract

Many analytical problems cannot be solved using a single XRD measurement. One example is the epitaxial growth of thin films of High Tc superconductors. To fully characterise such a sample it is necessary to study both the orientation (texture) and the phase composition of the layer.

Type
III. Thin-Film and Surface Characterization by XRD
Information
Advances in X-Ray Analysis , Volume 35 , Issue A: First Pacific-International Congress on X-ray Analytical Methods (PICXAM). Fortieth Annual Conference on Applications of X-ray Analysis, August 7-16, 1991 , 1991 , pp. 205 - 210
Copyright
Copyright © International Centre for Diffraction Data 1991

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References

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