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Characterization of Perovskite-Like Substrates for Thin Film Superconductors using Synchrotron X-Ray Topography

Published online by Cambridge University Press:  06 March 2019

G.-D. Yao
Affiliation:
Department of Materials Science & Engineering SUNY at Stony Brook, Stony Brook, NY 11794-2275
S.Y. Hon
Affiliation:
Department of Materials Science & Engineering SUNY at Stony Brook, Stony Brook, NY 11794-2275
M. Dudley
Affiliation:
Department of Materials Science & Engineering SUNY at Stony Brook, Stony Brook, NY 11794-2275
Julia M. Phillips
Affiliation:
AT & T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The characterization of defect configurations in various perovskite-like substrate materials for high Tc superconductor epitaxial films has been conducted using white beam synchrotron X-ray topography. The substrates were found to contain crystal lattice defects such as twins, dislocations and grain boundaries. It is shown that characterization of substrates can potentially afford insight into factors controlling the properties of the high Tc superconductor tilms supported on them. This can help in the selection of optimum substrate material. Defect formation mechanisms in individual materials as well as their respective influences on the films are discussed. Comparisons between the physical and chemical properties of several potential substrate materials are presented.

Type
IV. Lattice Defects and X-Ray Topography
Copyright
Copyright © International Centre for Diffraction Data 1991

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References

1. Tanner, B.K.. X-Ray Diffraction Topography, Pergamon Press, (1970).Google Scholar
2. Phillips, J.M., Siegal, M.P., Perry, C.L., and Marshall, J.H.. IEEE Trans. Magn., 27, 1006, (1991).Google Scholar
3. Berkstresser, G.W., Valentino, A.J., and Brandle, C.D.. J. Cryst. Growth, 109, 457, (1991).Google Scholar
4. Sandstrom, R.L., Giess, E.A., Gallagher, W.J., A. Segmuller, Cooper, E.I., Chisholrn, M.F., A. Gupta, S. Shinde, and Laibowitz, R.B.. Appl. Phys. Lett, 53, 1874, (1988).Google Scholar
5. Yao, G.-D., Dudley, M., Wang, Y., X, Liu, and Liebermanii, R.C.. Mater. ScA. & Eng. A, 132,23, (1991).Google Scholar
6. Balestrino, G., Foglietti, V., Marinelli, M., Milani, E., Paoletti, A., and Paroli, P., Appl Phys. Lett, 57,2359,(1990).Google Scholar
7. Miyazawa, S.. Appl. Phys. Lett, 55,2230, (1989).Google Scholar
8. Giess, E.A., RX. Sandstrom, Gallagher, W.J., A. Gupta, S. Shinde, Cook, R.F., Cooper, E.I.. O'Sullivan, E.J.M., J.M, Roldan, A. Segmuller, and J. Angilello. IBM J. Res. Develop., 34, 916, (1990).Google Scholar