Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-26T22:46:09.247Z Has data issue: false hasContentIssue false
  • English
  • Français

Grazing Incidence X-ray Fluorescence Analysis with Monochromatic Radiation

Published online by Cambridge University Press:  06 March 2019

Manfred Schuster
Manfred Schuster*
Affiliation:
Siemens AG Corporate Research and Development, ZFE ME AMF 12 Otto-Hahn-Ring 6, D-8000 Munich 83, West Germany
Get access

Abstract

X-ray fluorescence excited by a monochromatic collimated Mo-Kα beam at grazing incidence is measured as a function of the angle of incidence. Monochromatic excitation guarantees a well-defined penetration depth and enables a simple analytical description of the fluorescence intensity. This method is applied to a system of thin Cu and Ti metallization layers on a Si wafer and to As dopant concentration profiles in Si wafers.Thereby, the effect of annealing can be analyzed non-destructively.

Type
II. Determination of Low Concentration Levels by X-Ray Spectrometry
Information
Advances in X-Ray Analysis , Volume 34: Thirty-Ninth Annual Conference on Applications of X-ray Analysis, July 30 - August 3, 1990 , 1990 , pp. 71 - 80
Copyright
Copyright © International Centre for Diffraction Data 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wobrauschek, P., Aiginger, H., Owesny, G. and Streli, C., J. Trace Microprobe Techn. 6 (1988) 295.Google Scholar
2. Prange, A., Spectrochimica Acta 44B (1989)437.10.1016/0584-8547(89)80049-7Google Scholar
3. Penka, V. and Hub, W., Spectrochimica Acta 44B(1989) 483.Google Scholar
4. Penka, V. and Hub, W., Fresenius Z. Anal. Chem. 333 (1989) 586.Google Scholar
5. Eichinger, P., Rath, H. J. and Schwenke, H., Semiconductor Fabrication: Technology and Metrology, ASTM STP 990, Ed. D. C. Gupta, American Society for Testing and Materials (1988).Google Scholar
6. Klockenkämper, R., Spectroscopy 5 no. 6 (1990) 26.Google Scholar
7. Iida, A., Sakurai, K., Yoshinaga, Y. and Gohshi, Y., Nucl. Instr. Meth, Phys. Res. A246 (1986) 736.10.1016/0168-9002(86)90182-8Google Scholar
8. Brunel, M., Acta Ccyst. A42 (1986) 304.Google Scholar
9. Schwenke, H., Berneike, W., Knoth, J. and Weisbrod, U., Adv. X-Ray Anal. 32 (1989) 105.Google Scholar
10. Barbee, T. W. Jr. and Warburton, W. K., Mater. Lett. 3 (1984) 17.10.1016/0167-577X(84)90006-5Google Scholar
11. Barbee, T. W. Jr., Superlattice Microstructure 1 (1985) 311.10.1016/0749-6036(85)90093-XGoogle Scholar
12. Bedzyk, M. J., Bommarito, G. M. and Schildkraut, J. S., Phys. Rev. Lett. 62 (1989) 1376.Google Scholar
13. Król, A., Sher, C. J. and Kao, Y. H., Phys. Rev. B 38 (1988) 8579.10.1103/PhysRevB.38.8579Google Scholar
14. Lengeler, B., Mikrochimica Acta [Wien], 1 (1987) 455.Google Scholar
15. Lengeler, B., Advanced Materials 2 (1989) 123.10.1002/adma.19900020303Google Scholar
16. Hockett, R. S., Spectrochimica Acta B 3. TXRF workshop.Google Scholar
17. Tsuchiya, N., Tanaka, M., Kageyama, M., Kubota, A. and Matsushita, Y., Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 1131-1134.Google Scholar
18. Berneike, W., Knoth, J., Schwenke, H. and Weisbrod, U., Fresenius Z. Anal. Chem, 333 (1989) 524.Google Scholar
19. Evans, R. D., “The Atomic Nucleus” (McGraw-Hill, New York, 1955) pp. 672–674, p. 683, pp. 713-717.Google Scholar
20. Schuster, M., Spectrochimica Acta B 3. TXRF workshop.Google Scholar
21. de Boer, D. K. G. and van, W. W. den Hoogenhof, submitted to Spectrochimica Acta B.Google Scholar
22. Underwood, J. H. and Barbee, T. W. Jr., Topical Conf. on Low Energy X-Ray Diagnostics, Monterey, June 8-10, 1981, in AIP Conf. Proc. 75 (1981) 170.Google Scholar
23. Nishihagi, K., Fujino, N., Taniguchi, T. and Ikeda, S., 39th Annual Denver Conference on Applications of X-Ray Analysis, Steamboat Springs, CO, USA, July 30-August 3, 1990.Google Scholar
24. Kishihagi, K., Kawabata, A., Taniguchi, T. and Ikeda, S., Semicond. Clean. Teehnol., Osaka, 1989, Proc. Electrochem. Soc. vol. 90-9 (1990) 243.Google Scholar
25. Shimazaki, A., Hiratsuka, H., Matsushita, Y. and Yoshii, S., Extended Abstracts of the 16th (1984 International) Conference on Solid State Devices and Materials, Kobe, 1984, pp. 281-284.Google Scholar
26. Shiraiwa, T., Fujino, N., Sumita, S. and Tanizoe, Y., Semiconductor Fabrication: Technology and Metrology, ASTM STP 990, Ed. D. C. Gupta, American Society for Testing and Materials, 1989.Google Scholar
27. Huber, A., Rath, H. J., Eichinger, P., Th. Bauer, Kotz, L. and Staudigl, R., Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices (Electrochemical Soc, Ed. Th.J. Shaffner and D. K. Schroder, Chicago, 1988) p. 109.Google Scholar
28. Neumann, C., Spectrochimica Acta B 3. TXRF workshop.Google Scholar
29. Schuster, M., in “Oberflächen-, Grenzflächen- und Dünnfilmanalytik zur Lösung technischer Probleme” VD1 BW 9456, Dtisseldorf, 1989.Google Scholar
30. Lengeler, B., in “Synchrotronstrahlung in der Festkörperforschung, 17,IFF-Ferienkurs (KFA Jülich, Jülich, 1986) pp. 348-359.Google Scholar
31. Rygsel, H., Haberger, K., Hoffmann, K., Prinke, G., Dümcke, R. and Sachs, A., IEEE J. Solid State Circuits SC-15 no. 4 (1980) 549.Google Scholar