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Impurity Analysis on Si Wafer Using Monochro-Trex

Published online by Cambridge University Press:  06 March 2019

Kazuo Nishihagi ,
Noboru Yamashita ,
Kobukatsu Fujino ,
Kazuo Taniguchi  and
Shigero Ikeda
Kazuo Nishihagi
Affiliation:
Technos Co., Ltd, 2-23, Hayako–cho, Neyagawa–shi, Osaka 572, Japan
Noboru Yamashita
Affiliation:
Technos Co., Ltd, 2-23, Hayako–cho, Neyagawa–shi, Osaka 572, Japan
Kobukatsu Fujino
Affiliation:
Kyushu Electronic Metal Co., Ltd. 2201, Oaza–Kamioda, Kohoku–cho, Kishitna-gun, Saga 849-05
Kazuo Taniguchi
Affiliation:
Osaka Electro–Communication University 18-8, Hatsumachi, Neyagawa–shi, Osaka 572, Japan
Shigero Ikeda
Affiliation:
Ryukoku University Setache-cho, Otsu–shi, Shiga 502, Japan
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Extract

Recently, semiconductors have been integrated and densified to much higher levels. Under this circumstance, control of surface impurity on the Si substrate has become more important. We have attempted to increase analytical sensitivity of the transition metals, which have the greatest influence on productivity.

For the last few years, x-ray fluorescence analysis, using total reflection as a non-destructive and speedy method, has been applied for surface impurity analysis of Si wafers. However, this method is insufficiently sensitive (to the level required for surface impurity analysis) and the lower detection limit is still 1011 to 1012 atoms/cm2 order because the continuous x-ray excitation causes lots of scattering which makes the background higher.

Type
II. Determination of Low Concentration Levels by X-Ray Spectrometry
Information
Advances in X-Ray Analysis , Volume 34: Thirty-Ninth Annual Conference on Applications of X-ray Analysis, July 30 - August 3, 1990 , 1990 , pp. 81 - 89
Copyright
Copyright © International Centre for Diffraction Data 1990

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References

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