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Residual Stress in Thin Films of Aluminum/Hafnium

Published online by Cambridge University Press:  06 March 2019

S. J. Rant ,
C. C. Goldsmith  and
I. C. Noyan
S. J. Rant
Affiliation:
IBM Technology Products Division Hopewell Junction, NY 12533
C. C. Goldsmith
Affiliation:
IBM Technology Products Division Hopewell Junction, NY 12533
I. C. Noyan
Affiliation:
IBM Research Division - Thomas J. Watson Research Center Yorktown Heights, NY 10598
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Abstract

Residual stresses in thin films are important technologically due to their impact on the reliability of these structures. Various techniques are used to measure these stresses, and the results of these techniques do not always agree. In some cases, formation of interphase stresses were postulated to account for such discrepancy, but no definitive microstructural analysis was given. In this study, the residual stress response of evaporated films of 9 1% Al - 9% Hf (atomic %) deposited on 0.4 mm thick (100) Si wafers was studied as a function of thermal treatment. The stresses were measured by radius of curvature and d vs. sin2ψ techniques. Concurrently, the microstructure evolution was tracked using powder diffraction and metallographic techniques. As previously reported in the literature, residual stresses were tensile in all cases for both techniques. However, as expected, the stress results from both techniques did not always agree. The delta between the residual stresses measured by the radius of curvature and d vs. sin2ψ techniques were found to correlate well with the development of a 2nd phase (metastable cubic Al3Hf).

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 37: Forty-Second Annual Conference on Applications of X-ray Analysis, August 2-6, 1993 , 1993 , pp. 157 - 165
Copyright
Copyright © International Centre for Diffraction Data 1993

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