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X-ray Characterisation of Residual Surface Strains after Polishing of Silicon Wafers

Published online by Cambridge University Press:  06 March 2019

Linda Hart ,
D. Keith Bowen  and
Graham R. Fisher
Linda Hart
Affiliation:
Department of Engineering, University of Warwick, UK
D. Keith Bowen
Affiliation:
Department of Engineering, University of Warwick, UK
Graham R. Fisher
Affiliation:
Department of Engineering, University of Warwick, UK
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Abstract

Detailed x-ray double-axis rocking-curve analysis has been made of a series of silicon wafers, polished using various colloidal silicas with a number of different conditions. Significant differences, attributable to the polishing conditions, were observed in the tails of the rocking curves, using a four-reflection, non-dispersive beam conditioner. These have been compared with theoretical simulations in order to deduce the strain profile near the surface.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 33: Thirty-Eighth Annual Conference on Applications of X-ray Analysis, July 31 - August 4, 1989 , 1989 , pp. 55 - 60
Copyright
Copyright © International Centre for Diffraction Data 1989

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