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XRD Characterization of Titanium/Copper Thin Films Heat Treated in Vacuum and Hydrogen

Published online by Cambridge University Press:  06 March 2019

M. J. Sullivan ,
C. Goldsmith  and
P. Ficalora
M. J. Sullivan
Affiliation:
International Business Machines East Fishkill Facility Hopewell Junction, NY
C. Goldsmith
Affiliation:
International Business Machines East Fishkill Facility Hopewell Junction, NY
P. Ficalora
Affiliation:
Rensselaer Polytechnic Institute Troy, NY
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Extract

Thin film metallization is used on integrated circuit chips and ceramic and/or organic substrates for a number of different purposes, On chips the metallization forms Ohmic and Schottky Barrier Diode contact to the semiconductor and the electrical properties of these contacts are strongly influenced by the metals used. Interaction of the metal and semiconductor during processing can result in major variations in the electrical properties of the contacts, Chip metallization is also employed to provide electrical interconnection between devices on a chip. The interconnections can all be made in a single layer, or for more complex chips, a number of layers might be employed using dielectric layers to separate metal layers and via holes through the dielectric for layer-to-layer interconnection. Chip metallization is also used to form the interconnections between the chips and the substrate carrier.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 33: Thirty-Eighth Annual Conference on Applications of X-ray Analysis, July 31 - August 4, 1989 , 1989 , pp. 177 - 187
Copyright
Copyright © International Centre for Diffraction Data 1989

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