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Dynamics of the Formation of the Nitrogen-Vacancy Center in Diamond

Published online by Cambridge University Press:  01 February 2016

Amihai Silverman
Affiliation:
Computer and Information Systems Division, Technion – Israel Institute of Technology, Haifa 32000 , Israel
Joan Adler*
Affiliation:
Physics Department, Technion – Israel Institute of Technology, Haifa 32000Israel
Rafi Kalish
Affiliation:
Physics Department, Technion – Israel Institute of Technology, Haifa 32000Israel Solid State Institute, Technion – Israel Institute of Technology, Haifa 32000Israel
*
*Corresponding author. Email addresses:amihai@tx.technion.ac.il (A. Silverman), phr76ja@tx.technion.ac.il (J. Adler), kalish@si.technion.ac.il (R. Kalish)
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Abstract

We present results of simulations of the energetics and dynamics involved in the realization of the NV (nitrogen-vacancy) center in diamond. We use the self-consistent charge-density functional tight-binding approximation and show that when the nitrogen resides on a single substitutional site, it fails to attract a vacancy, hence no NV center can be formed. However, if it occupies a split interstitial site and two vacancies reside on the second or third neighbor sites, an NV center will form following annealing at temperatures as low as 300°C and 650°C, respectively. These results provide guidelines to experimentalists on how to increase the efficiency of NV formation in diamond.

Type
Research Article
Copyright
Copyright © Global-Science Press 2016 

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References

[1]Awschalom, D. D., Epstein, R., and Hanson, R., Scientific American 297(4), 84 (2007).CrossRefGoogle Scholar
[2]Kalish, R., in MRS bulletin, Vol. 38, edited by Acosta, V. and Hemmer, P. (2013).Google Scholar
[3]Kalish, R., Nucl. Instr. Methods B 272, 42 (2012).Google Scholar
[4]Kalish, R., Ion implantation in diamond for quantum information processing: doping and damaging, in Quantum information processing with diamond principles and applications, Vol. 63, edited by Prawer, S. and Aharonovch, I. (WPEO, 2014) Chap. 3.Google Scholar
[5]Botsoa, J., Sauvage, T., Adam, M.-P., Desgardin, P., Leoni, E., Courtois, B., Treussart, F., and Barthe, M.-F., Phys. Rev. B 84, 125209 (2011).CrossRefGoogle Scholar
[6]Collins, A. T. and Kiflawi, I. J., J. Phys. Condens. Matter 21, 364209 (2009).Google Scholar
[7]Davies, G., Nature 269, 498 (1977).Google Scholar
[8]Rabeau, J. R., Reichart, P., Tamanyan, G., Jamieson, D. N., Prawer, S., Jelezko, F., Gaebel, T., Popa, I., Domhan, M., and Wrachtrup, J., Appl. Phys. Lett. 88, 023113 (2006).Google Scholar
[9]Pezzagna, S., Naydenov, B., Jelezko, F., Wrachtrup, J., and Meijer, J., New J. Phys. 12, 065017 (2010).Google Scholar
[10]Acosta, V. M., Bauch, E., Ledbetter, M. P., Santori, C., Fu, K.-M.C., Barclay, P.E., Beausoleil, R.G., Linget, H., Roch, J.F., Treussart, F., Chemerisov, S., Gawlik, W., and Budker, D., Phys. Rev. B 80, 115202 (2009).Google Scholar
[11]Mainwood, A., Phys. Rev. B 49, 7934 (1994).Google Scholar
[12]Luszczek, M., Laskowski, R., and Horodecki, P., Physica B 348, 292 (2004).Google Scholar
[13]Doherty, M., Hossain, F., and Hollenberg, L., Physics Procedia 3, 1525 (2010).Google Scholar
[14]Goss, J. P., Coomer, B. J., Jones, R., Shaw, T. D., Briddon, P. R., Rayson, M., and Oberg, S., Phys. Rev. B 63, 195208 (2001).Google Scholar
[15]Davies, G., Lawson, S. C., Collins, A. T., Mainwood, A., and Sharp, S. J., Phys. Rev. B 46, 13157 (1992).Google Scholar
[16]Kiflawi, I., Mainwood, A., Kanda, H., and Fisher, D., Phys. Rev. B 54, 16719 (1996).Google Scholar
[17]Dek, P., Aradi, B., Kaviani, M., Frauenheim, T., and Gali, A., Phys. Rev. B 89, 75203 (2014).Google Scholar
[18]Kovalenko, A., Petrkov, V., Ashcheulov, P., Zli, S., Nesldek, M., Kraus, I., and Kratochvlov, I., Physica Status Solidi (A) 209, 1769 (2012).CrossRefGoogle Scholar
[19]Goss, J. P., Briddon, P. R., Papagiannidis, S., and Jones, R., Phys. Rev. B 70, 235208 (2004).Google Scholar
[20]Jones, R., Ewels, C., Goss, J., Miro, J., Deak, P., Oberg, S., and Rasmussen, F. B., Semlcond. Sci. Technol. 9, 2145 (1994).Google Scholar
[21]Karoui, F. S. and Karoui, A., J. Appl. Phys. 108, 033513 (2010).Google Scholar
[22]Goss, J. P., Hahn, I., Jones, R., Briddon, P. R., and Oberg, S., Phys. Rev. B 67, 045206 (2003).Google Scholar
[23]Naydenov, B., Reinhard, F., Lammle, A., Richter, V., Kalish, R., D'Haenens-Johansson, U. F. S., Newton, M., Jelezko, F., and Wrachtrup, J., Appl. Phys. Lett. 97, 242511 (2010).Google Scholar
[24]Schwartz, J., Aloni, S., Ogletree, D. F., and Schenkel, T., New J. Phys. 14, 043024 (2012).Google Scholar
[25]Gali, A., Fyta, M., and Kaxiras, E., Phys. Rev. B 77, 155206 (2008).CrossRefGoogle Scholar
[26]Saada, D., Adler, J., and Kalish, R., Int. J. Mod. Phys. C 09, 61 (1998).Google Scholar
[27]Silverman, A., Adler, J., and Kalish, R., Phys. Rev. B 83, 224206 (2011).CrossRefGoogle Scholar
[28]Fairchild, B. A., Olivero, P., Rubanov, S., Greentree, A. D., Waldermann, F., Taylor, R. A., Walmsley, I., Smith, J. M., Huntington, S., Gibson, B. C., Jamieson, D. N., and Prawer, S., Adv. Mater. 20, 4793 (2008).Google Scholar
[29]Porezag, D., Frauenheim, T., Kohler, T., Seifert, G., and Kaschner, R., Phys. Rev. B 51, 12947 (1995).Google Scholar
[30]Elstner, M., Porezag, D., Jungnickel, G., Elsner, J., Haugk, M., Frauenheim, T., Suhai, S., and Seifert, G., Phys. Rev. B 58, 7260 (1998), http://www.dftb-plus.info.Google Scholar
[31]Koehler, C. and Frauenheim, T., Surf. Sci. 600, 453 (2006).Google Scholar
[32]Bradac, C., Gaebel, T., Naidoo, N., Sellars, M. J., Twamley, J., Brown, L. J., Barnard, A. S., Plakhotnik, T., Zvyagin, A. V., and Rabeau, J. R., Nature Nanotechnology 5, 345 (2010).Google Scholar
[33]Adler, J., Koenka, Y., and Silverman, A., Physics Procedia 15, 7 (2011).Google Scholar
[34]Peled, D., Silverman, A., and Adler, J., J. Phys.: Conf. Ser. 454, 012076 (2013), http://phycomp.technion.ac.il/~aviz.Google Scholar
[35]Adler, J., Silverman, A., Ierushalmi, N., Sorkin, A. and Kalish, R., VIIth Brazilian Meeting on Simulational Physics, Journal of Physics: Conference Proceedings, 487, 01215 (2014), http://phjoan23.technion.ac.il/~phr76ja/nv.Google Scholar
[36]Adler, J., Silverman, A., Ierushalmi, N., Sorkin, A., and Kalish, R., J. Phys.: Conf. Ser. 487, 012015 (2014).Google Scholar