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Nano-scale MOSFET device modelling with quantum mechanical effects

Published online by Cambridge University Press:  01 November 2006

ELLIS CUMBERBATCH ,
SHIGEYASU UNO  and
HENOK ABEBE
ELLIS CUMBERBATCH
Affiliation:
School of Mathematical Sciences, Claremont Graduate University, Claremont, CA 91711, USA
SHIGEYASU UNO
Affiliation:
School of Mathematical Sciences, Claremont Graduate University, Claremont, CA 91711, USA
HENOK ABEBE
Affiliation:
USC Information Sciences Institute, MOSIS Service, 4676 Admiralty Way, Marina del Rey, CA 90292, USA email: abebeh@mosis.org
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Abstract

The continuing down-scaling trend of CMOS technology has brought serious deterioration in the accuracy of the SPICE (Simulation Program with Integrated Circuit Emphasis) device models used in the design of chip functions. This is due to in part to hot electron and quantum effects that occur in modern nano-scale MOSFET devices [13, 25, 28, 33, 34]. The focus of this paper is on modeling quantum confinement effects based on the Density-Gradient (DG) model [6, 9, 14], for application in SPICE. Analytic 1-D quantum mechanical (QM) effects correction formulae for the MOSFET inversion charge and electrostatic potential are derived from the DG model using matched asymptotic expansion techniques. Comparison of these new models with numerical data shows good results.

Type
Papers
Information
European Journal of Applied Mathematics , Volume 17 , Issue 4 , August 2006 , pp. 465 - 489
Copyright
2006 Cambridge University Press

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