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Significant measureable development of inductance gain per unit of space in loop fractals

Published online by Cambridge University Press:  24 March 2015

Mohammad Alibakhshi-Kenari*
Affiliation:
Electrical and Communication Engineering Department of Shahid Bahonar University, Kerman-Iran
*
Corresponding author: M. Alibakhshi-Kenari Email: Naeem.alibakhshi@yahoo.com

Abstract

A significant measureable development of inductance gain per unit of space in loop fractals for a suite of inductors which occupy the same layout space and require only a single-fabrication layer is investigated. All structures are fabricated on a borofloat glass substrate with dielectric constant loss tangent of 0.004. A chrome layer of 30 nm for adhesion followed by a 180 nm gold layer were sputtered and etched. To increase the surface area is implemented a simple geometrical strategy through fractalization and consequently the inductive performances is improved. Also, the higher fractal orders can be developed the inductive performance over 9 times from 0th to 3rd order. The fractal derivations of the original loop due to its space filling properties are examined and it suggests that although the effective electrode length increases, overall, the arrangement still essentially occupies the same space. In terms of design space for 0th, 3O-5O-7O of 1st, 2nd, and 3rd orders of fractals, 0, 26.2, 34.6, 38.6, 65.5, and 75.8% of occupied conductor surface area are saved. The measured inductances and resistances for aforementioned orders of fractals are 4.6 nH and 5 Ω, 8.6 nH and 10.5 Ω, 12 nH and 11.6 Ω, 12.8 nH and 17.3 Ω, 19.2 nH and 23.2 Ω, and 44.7 nH and 63.5 Ω, respectively.

Type
Online Only Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2015 

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References

REFERENCES

[1] Burghartz, J.N.; Edelstein, D.C.; Jahnes, C.V.; Uzoh, C.E.: U.S. Patent No.6,114,937. Washington, DC: U.S. Patent and Trademark Office, 2000.Google Scholar
[2] Kawabe, K.; Koyama, H.; Shirae, K.: Planar inductor. IEEE Trans. Mag., 20 (5) (1984), 18041806. doi: 10.1109/TMAG.1984.1063271, 6 January 2003.CrossRefGoogle Scholar
[3] Bahl, I.J.: Lumped Elements for RF and Microwave Circuits, Artech House Publishers, International Standard Book Number: 1-58053-309-4, 2003.Google Scholar
[4] Stojanović, G.; Radovanović, M.; Radonić, V.: A new fractal-based design of stacked integrated transformers. Act. Passive Electron. Compon., Hindawi Publishing Corp., 2008 (2008), Article ID 134805, 8. http://dx.doi.org/10.1155/2008/134805.Google Scholar
[5] Werner, D.H.; Ganguly, S.: An overview of fractal antenna engineering research. IEEE Antennas Propag. Mag., 45 (1) (2003), 3857. doi: 10.1109/MAP.2003.1189650.Google Scholar
[6] Xu, H.X.; Wang, G.M.; Liang, J.G.: Novel CRLH TL metamaterial and compact microstrip branch-line coupler application. Prog. Electromagn. Res. C, 20 (2011), 173186.CrossRefGoogle Scholar
[7] Best, S.R.; Morrow, J.D.: The effectiveness of space-filling fractal geometry in lowering resonant frequency. IEEE Antennas Wirel. Propag. Lett., 1 (1) (2002), 112115.CrossRefGoogle Scholar
[8] Robin, T.; Souillard, B.: Electromagnetic properties of fractal aggregates. EPL (Europhys. Lett.), 21 (3) (2007), 273. doi:10.1209/0295-5075/21/3/004.CrossRefGoogle Scholar
[9] Stauffer, L.: C-V Measurement Tips, Trics, and Traps. Keithley Instruments, Inc., Printed in the U.S.A., No. 3109, 2011.Google Scholar
[10] Falconer, K.: Fractal Geometry: Mathematical Foundations and Applications, 2nd ed., John Wiley & Sons Ltd, The Atrium, Southern Gate, Chichester, West Sussex, England, 2003.CrossRefGoogle Scholar
[11] Mandelbrot, B.B.; Gefen, Y.; Aharony, A.; Peyriere, J.: Fractals, their transfer matrices and their eigen-dimensional sequences. J. Phys. A: Math. Gen., 18 (2) (1985), 335. doi:10.1088/0305-4470/18/2/024.CrossRefGoogle Scholar
[12] Maric, A. et al. : Modelling and characterisation of fractal based RF inductors on silicon substrate, in 2008. ASDAM 2008 Int. Conf. on Advanced Semiconductor Devices and Microsystems, October 2008, 191194.Google Scholar
[13] Wang, G.; Xu, L.; Wang, T.: A novel MEMS fractal inductor based on Hilbert curve, in 2012 Fourth Int. Conf. on Computational Intelligence and Communication Networks (CICN), November 2012, 241–244.Google Scholar
[14] Paul, C.: Inductance: Loop and Partial, Wiley-IEEE Press, 2010, 142146.Google Scholar