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A wideband CMOS distributed amplifier with slow-wave shielded transmission lines

Published online by Cambridge University Press:  15 November 2010

Rosa R. Lahiji*
Affiliation:
Department of Electrical Engineering & Computer Science, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA. Phone: +1 216 368 4120. West Wireless Health Institute, 10350 North Torrey Pines Road, La Jolla, CA 92037, USA.
Linda P.B. Katehi
Affiliation:
University of California at Davis, One Shields Avenue, Davis, CA 95616, USA.
Saeed Mohammadi
Affiliation:
Purdue University, Birck Nanotechnology Center, 1205 West State Street, West Lafayette, IN 47907, USA.
*
Corresponding author: R.R. Lahiji Email: rosa.lahiji@case.edu

Abstract

A four-stage distributed amplifier utilizing low-loss slow-wave shielded (SWS) transmission lines is implemented in a standard 0.13 μm Complementary Metal-Oxide-Semiconductor (CMOS) technology. The amplifier when biased in its high current operating mode of IDtotal = 46 mA (at Vdd = 2.2 V, Pdiss = 101 mW) provides a forward transmission gain of 11.3 ± 1.5 dB with a 3-dB bandwidth of 17 GHz and a gain-bandwidth product of 74 GHz. The noise figure (NF) under the same bias condition is better than 8.5 dB up to 10 GHz. The measured output-referred 1-dB compression point is higher than +2 dBm. The amplifier is also measured under low-bias condition of IDtotal = 18 mA (at Vdd = 1.15 V, Pdiss = 20.7 mW). It provides a transmission gain of 6.6 ± 1 dB, a 3-dB bandwidth of 14.8 GHz, a gain-bandwidth product of 35.5 GHz, and a NF of better than 8.6 dB up to 10 GHz. Despite using a simple four-stage cascode design, this distributed amplifier achieves very high-gain-bandwidth product at a relatively low DC power compared to the state of the art CMOS distributed amplifiers reported in the literature. This is due to the incorporation of low-loss SWS coplanar waveguide (CPW) transmission lines with a loss factor of nearly 50% of that of standard transmission lines on CMOS-grade Si substrate.

Type
Original Article
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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