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Analysis of Au metal–metal contacts in a lateral actuated RF MEMS switch

Published online by Cambridge University Press:  24 July 2014

Markus Gaitzsch*
Affiliation:
Center for Microtechnologies, Chemnitz University of Technology, Reichenhainer Str. 70, Chemnitz D-09126, Germany
Steffen Kurth
Affiliation:
Fraunhofer ENAS, Technologie-Campus 3, Chemnitz D-09126, Germany
Sven Voigt
Affiliation:
Fraunhofer ENAS, Technologie-Campus 3, Chemnitz D-09126, Germany
Sven Haas
Affiliation:
Center for Microtechnologies, Chemnitz University of Technology, Reichenhainer Str. 70, Chemnitz D-09126, Germany
Thomas Gessner
Affiliation:
Fraunhofer ENAS, Technologie-Campus 3, Chemnitz D-09126, Germany
*
Corresponding author: M. Gaitzsch Email: markus.gaitzsch@enas.fraunhofer.de

Abstract

This paper reports on the ohmic contacts of an radio-frequency micro-electro-mechanical-system (RF MEMS) switch. The structure of the MEMS is described briefly to give information about the organization of the switch device. The most significant performance data are reported, indicating very low actuation voltage below 5 V, switching time of <10 µs and good RF performance for frequencies up to 5 GHz. Since the contact performance is a key for excellent RF performance in the actuated state and for high reliability as well the article is focused on the contacts. It is supposed that asperities are building the current path in a closed contact, which is proved by measurements of the closing process with high time resolution. The measurements exhibit very good power-handling capabilities of the contacts. The reported findings render prior theoretical experiments with a physical device.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2014 

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