Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-28T20:21:28.397Z Has data issue: false hasContentIssue false

Equivalent circuit model of reliable RF-MEMS switches for component synthesis, fabrication process characterization and failure analysis

Published online by Cambridge University Press:  15 October 2013

Núria Torres Matabosch*
Affiliation:
CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France
Fabio Coccetti
Affiliation:
CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France
Mehmet Kaynak
Affiliation:
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Beatrice Espana
Affiliation:
Thales Alenia Space, 26 Avenue Jean-François Champollion, 31037 Toulouse, France
Bernd Tillack
Affiliation:
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Jean-Louis Cazaux
Affiliation:
Thales Alenia Space, 26 Avenue Jean-François Champollion, 31037 Toulouse, France
*
Corresponding author: N. Torres Matabosch E-mail: nuria.torres.matabosch@gmail.com

Abstract

An accurate and very large band (30–110 GHZ) lumped element equivalent circuit model of capacitive RF-MEMS components based on a standard 250 nm BiCMOS technology is presented. This model is able to predict the effect of the fabrication process dispersion, synthesize new components and monitor the failure mechanisms. Moreover, a reliability study is performed in order to define a screening criterion (VPOUT > 36 V and |VPIN − VPOUT| ≤ 1) based on which a selection of the devices with optimal performance in terms of RF and lifetime performance can be made. Finally, a very quick effective technique (non-intrusive) is proposed to carry out this operation.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]De Wolf, I.: Reliability of MEMS, in Proc. 7th Int. Conf. Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSime 2006), 2006, 1–6.Google Scholar
[2]Lucyszyn, S. (Ed.): Advanced RF MEMS, Cambridge University Press, Cambridge, 2010.CrossRefGoogle Scholar
[3]Bordas, C. et al. : Carbon nanotube based dielectric for enhanced RF MEMS reliability, in 2007 IEEE MTT-S Int. Microwave Symp. Digest (MTT), Honolulu, Hawaii, June 2007, 375–378.Google Scholar
[4]Goldsmith, C. et al. : Charging characteristics of ultra-nano-crystalline diamond in RF MEMS capacitive switches, in 2010 IEEE MTT-S Int. Microwave Symp. Digest (MTT), Anaheim, California, May 2010, 1246–1249.Google Scholar
[5]Goldsmith, C.L.: United States Patent no: 6608268B1, August 2003.Google Scholar
[6]Feixiang, K. et al. : A ruthenium-based multimetal-contact RF MEMS switch with a corrugated diaphragm. J. Microelectromech. Syst., 17 (6) (2008), 14471459.CrossRefGoogle Scholar
[7]Nguyen, C.T.C.: The harsh environment robust micromechanical technology (HERMiT) program: success and some unfinished business, in 2012 IEEE MTT-S Int. Microwave Symp. Digest (MTT), Montreal, Canada, June 2012, 1–3.Google Scholar
[8]Kaynak, M. et al. : BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique, in 2010 IEEE Int. Electron Devices Meeting (IEDM), 2010, 36.5.1–36.5.4.CrossRefGoogle Scholar
[9]Kaynak, M. et al. : RF-MEMS switch module in a 0.25 µm BiCMOS technology, in 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 16–18 January 2012, 25–28.Google Scholar
[10]Kaynak, M. et al. : Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads, 2012 IEEE MTT-S Int. Microwave Symp. Digest (MTT), 17–22 June 2012, 1–3.CrossRefGoogle Scholar
[11]Torres Matabosch, N. et al. Accurate and Versatile. Equivalent Circuit Model for RF-MEMS Circuit. Optimization in BiCMOS. Technology, in 2012 European Microwave Integrated Circuits Conf. (EuMIC), October 2012.Google Scholar
[12]Dickson, T.O. et al. : 30–100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits. IEEE Trans. Microwave Theory and Techniques, 53 (1) (2005), 123133.CrossRefGoogle Scholar
[13]Simons, R.N.: Coplanar Waveguide Circuits Components & Systems, John Wiley & Sons, New York, 2012.Google Scholar
[14]Vendier, O.: RF-MEMS for space applications, in 2012 European Microwave Integrated Circuits Conf. (EuMIC), RF-MEMS for Mm-wave Reconfigurable ICs Workshop, November 2012.Google Scholar
[15]Torres Matabosch, N.: Design for reliability applied to RF-MEMS devices and circuits issued from different TRL environments, Ph.D. dissertation, Université Paul Sabatier – Toulouse III, 2013.Google Scholar
[16]Rebeiz, G.M.: RF MEMS: Theory, Design, and Technology, Wiley, New York, 2003, 87104.CrossRefGoogle Scholar