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Generation of electrical self-oscillations in two-terminal switching devices based on the insulator-to-metal phase transition of VO2 thin films

Published online by Cambridge University Press:  17 November 2011

Jonathan Leroy ,
Aurelian Crunteanu ,
Julien Givernaud ,
Jean-Christophe Orlianges ,
Corinne Champeaux  and
Pierre Blondy
Jonathan Leroy*
Affiliation:
XLIM UMR 6172, CNRS/Université de Limoges, Avenue Albert Thomas, 87060 Limoges, France. Phone: +33 5 87 50 67 41.
Aurelian Crunteanu*
Affiliation:
XLIM UMR 6172, CNRS/Université de Limoges, Avenue Albert Thomas, 87060 Limoges, France. Phone: +33 5 87 50 67 41.
Julien Givernaud
Affiliation:
XLIM UMR 6172, CNRS/Université de Limoges, Avenue Albert Thomas, 87060 Limoges, France. Phone: +33 5 87 50 67 41.
Jean-Christophe Orlianges
Affiliation:
SPCTS UMR 6638, CNRS/Université de Limoges, CEC, 12 rue Atlantis, 87068 Limoges, France.
Corinne Champeaux
Affiliation:
SPCTS UMR 6638, CNRS/Université de Limoges, CEC, 12 rue Atlantis, 87068 Limoges, France.
Pierre Blondy
Affiliation:
XLIM UMR 6172, CNRS/Université de Limoges, Avenue Albert Thomas, 87060 Limoges, France. Phone: +33 5 87 50 67 41.
*
Corresponding authors: J. Leroy and A. Crunteanu Emails: jonathan.leroy@xlim.fr; aurelian.crunteanu@xlim.fr
Corresponding authors: J. Leroy and A. Crunteanu Emails: jonathan.leroy@xlim.fr; aurelian.crunteanu@xlim.fr
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Abstract

We present the non-linear electrical properties of simple two-terminal switching devices based on vanadium dioxide (VO2) thin films. The current–voltage characteristics of such devices present negative differential resistance (NDR) regions allowing generating electrical self-oscillations across the investigated devices, with frequencies ranging from several kHz up to 1 MHz. We investigate and compare the factors determining the onset of oscillatory phenomenon in both voltage- and current-activated oscillations and explain its origin. For both activation modes, we will correlate the properties of electrical oscillations (amplitude and frequency) with the amplitude of the continuous excitation signal, the physical geometry of the devices or ambient temperature. We conclude by mentioning several possible applications for the oscillation generation in the radiofrequency (RF)/microwave domains (inverters, integrated a.c. signal generators, pressure and temperature sensors, etc.).

Keywords

Vanadium dioxideElectrical switchingSelf-oscillationsMetal-insulator transition
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Special Issue 1: IJMWT Special Issue on the 2011 National Microwave Days in France , February 2012 , pp. 101 - 107
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

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