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Impact evaluation of DC operating condition on DPD linearizability and power efficiency in GaN-based power amplifiers

Published online by Cambridge University Press:  29 May 2019

Konrad Jędrzejewski Open the ORCID record for Konrad Jędrzejewski [Opens in a new window] ,
Dawid W. Rosołowski Open the ORCID record for Dawid W. Rosołowski [Opens in a new window]  and
Wojciech Wojtasiak Open the ORCID record for Wojciech Wojtasiak [Opens in a new window]
Konrad Jędrzejewski*
Affiliation:
Warsaw University of Technology, Institute of Electronic Systems, Warsaw, Poland
Dawid W. Rosołowski
Affiliation:
Warsaw University of Technology, Institute of Radioelectronics and Multimedia Technology, Warsaw, Poland
Wojciech Wojtasiak
Affiliation:
Warsaw University of Technology, Institute of Radioelectronics and Multimedia Technology, Warsaw, Poland
*
Author for correspondence: Konrad Jędrzejewski, E-mail: konrad.jedrzejewski@pw.edu.pl
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Abstract

The paper presents the results of studies on the effect of transistor DC operating conditions on GaN power amplifiers’ (PAs) power efficiency and linearity improved by digital predistortion (DPD). The single-ended 10 W (ISM2.45 GHz) and 150 W (3.4/3.6 GHz) GaN HEMT PAs excited by wideband LTE20 E-TM1.1 signal were tested. To check the applicability of the small-signal approach for designing of LTE signals’ PAs, the 150 W PA using transistor model extracted from S-parameters measured at the properly selected operating points was designed. The conventional DPD based on the indirect learning architecture and the memory polynomial model of PA non-linearity was implemented. The results of the research show that in case of class A and B PAs operating up to several dozen watts, an additional improvement in adjacent channel leakage ratio (ACLR) of the order of a few dB only by an increase in the quiescent drain current of PA transistor can be achieved. However, a noticeable ACLR improvement with a coincident increase in power-added efficiency (PAE) can be obtained by choosing the compromise DC operating point and using DPD. In the case of high-PAs, the linearity and efficiency are strongly dependent on the load of a transistor, thus the role of DPD is significantly increased.

Keywords

Digital predistortionpower amplifiers and linearizerswide-bandgap semiconductor devices and technologieswireless systems and signal processing
Type
MIKON 2018
Information
International Journal of Microwave and Wireless Technologies , Volume 11 , Special Issue 7: MIKON 2018 / EuMW 2018 (Part II) , September 2019 , pp. 554 - 567
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2019 

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