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InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications

Published online by Cambridge University Press:  27 November 2017

Stéphane Piotrowicz ,
Jean-Claude Jacquet ,
Piero Gamarra ,
Olivier Patard ,
Christian Dua ,
Eric Chartier ,
Nicolas Michel ,
Mourad Oualli ,
Cedric Lacam  and
Clément Potier
...Show all authors
Stéphane Piotrowicz*
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Jean-Claude Jacquet
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Piero Gamarra
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Olivier Patard
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Christian Dua
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Eric Chartier
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Nicolas Michel
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Mourad Oualli
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Cedric Lacam
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Clément Potier
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Philippe Altuntas
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
Sylvain Delage
Affiliation:
III-V Lab, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
*
Corresponding author: S. Piotrowicz Email: stephane.piotrowicz@3-5lab.fr
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Abstract

This paper presents performances achieved with InAlGaN/GaN HEMTs with 0.15 µm gate length on SiC substrate. Technology Computer Aided Design simulations were used to optimize the heterostructure. Special attention was paid to the design of the buffer structure. I-V measurements with DC and pulsed bias voltages were performed. CW measurements at millimeter waves were also carried out and are detailed in the following sections. The technology, optimized for power applications up to 45 GHz, demonstrates a current gain cut-off frequency FT of 70 GHz and a maximum available gain cut-off frequency FMAG of 140 GHz. CW Load-pull power measurements at 30 GHz enable to achieve a maximum PAE of 41% associated with an output power density of 3.5 W/mm when biased at VDS = 20 V. These devices, with an improved buffer structure show, reduced recovery time in pulsed operating conditions. These improved characteristics should have a positive impact for pulsed or modulated signal applications.

Keywords

InAlGaN HEMTPower DevicesPower characterizations
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 10 , Special Issue 1: Journee Nationale des Micro-ondes 2017 , February 2018 , pp. 39 - 46
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2017 

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References

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