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Industrial GaN FET technology

Published online by Cambridge University Press:  11 March 2010

Hervé Blanck ,
James R. Thorpe ,
Reza Behtash ,
Jörg Splettstößer ,
Peter Brückner ,
Sylvain Heckmann ,
Helmut Jung ,
Klaus Riepe ,
Franck Bourgeois  and
Michael Hosch
...Show all authors
Hervé Blanck*
Affiliation:
United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany.
James R. Thorpe
Affiliation:
United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany.
Reza Behtash
Affiliation:
United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany.
Jörg Splettstößer
Affiliation:
United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany.
Peter Brückner
Affiliation:
United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany.
Sylvain Heckmann
Affiliation:
United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany.
Helmut Jung
Affiliation:
United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany.
Klaus Riepe
Affiliation:
United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany.
Franck Bourgeois
Affiliation:
United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany.
Michael Hosch
Affiliation:
Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany.
Dominik Köhn
Affiliation:
Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany.
Hermann Stieglauer
Affiliation:
United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany.
Didier Floriot
Affiliation:
United Monolithic Semiconductors SAS, Orsay, France.
Benoît Lambert
Affiliation:
United Monolithic Semiconductors SAS, Orsay, France.
Laurent Favede
Affiliation:
United Monolithic Semiconductors SAS, Orsay, France.
Zineb Ouarch
Affiliation:
United Monolithic Semiconductors SAS, Orsay, France.
Marc Camiade
Affiliation:
United Monolithic Semiconductors SAS, Orsay, France.
*
Corresponding author: H. Blanck Email: herve.blanck@ums-ulm.de
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Abstract

GaN technology has gained a lot of attention in Europe over the last few years for various domains including RF electronics. After a few years of active observation, United Monolithic Semiconductors (UMS) has taken the decision to introduce a GaN technology family in its portfolio. Based on its extensive experience of III–V technology and the intensive support and collaboration with partners and European research institutes, UMS has developed the capability to produce state-of-the-art GaN devices and circuits. The present paper will summarize the current status achieved and illustrate it with a few representative examples. Aspects covering material, devices, and circuits will be addressed.

Keywords

GaN technologyRFMMICPower
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 21 - 32
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

REFERENCES

[1]Blanck, H.; Splettstößer, J.; Floriot, D.: GaN technology for RF electronics – development status in Europe, in Proceedings of Compound Semiconductor Integrated Circuits Symposium, Greensboro, NC, USA, 2009Google Scholar
[2]http://www.hyphen-eu.com/Google Scholar
[3]Defrance, N. et al. : AlGaN/GaN HEMT high power densities on SiC/SiO2/poly-SiC substrates. IEEE Electron. Dev. Lett., 30 (6) (2009), 596.Google Scholar
[4]Jung, H.; et al. : Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface. Phys. Status Solidi C, 6 (S2) (2009), S976–S979.Google Scholar
[5]Stieglauer, H.; Bödege, G.; Öttlin, D.; Ilgen, M.; Blanck, H.; Behammer, D.: Process benchmarking of SiC backside via manufacturing for GaN HEMT technology, in Proceedings of CS-MANTECH Conference, Tampa, FL, USA, 2009.Google Scholar
[6]Device Simulation Software ATLAS 2008, Silvaco, Santa Clara, CA 95054, USA, May 2008.Google Scholar
[7]Sanabria, C.; Chakraborty, A.; Xu, H.; Rodwell, M.J.; Mishra, U.; York, R.A.: The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs. IEEE Electron. Dev. Lett., 27 (1) (2006), pp. 19–21.CrossRefGoogle Scholar
[8]Hosch, M.; Behtash, R.; Thorpe, J.R.; Blanck, H.; Riepe, K.J.; Schumacher, H.: Gate leakage in AlGaN/GaN HEMTs utilizing a dielectric assisted gate process – a simulation study, in Proc. 18th European Workshop on Heterostructure Technology, Günzburg, Germany, 2009.Google Scholar
[9]Liu, Z.H.; Arulkumaran, S.; Ng, G.-I.: Temperature dependent microwave noise parameters and modeling of AlGaN/GaN HEMTs on Si substrate, in Proc. Int. Microwave Symp., Honolulu, Hawaii, 2007, 777.CrossRefGoogle Scholar
[10]Bettidi, A.; et al. : X-Band GaN-HEMT LNA performance versus robustness trade-off, in Proc.e 4th European Microwave Integrated Circuits Conf., Rome, Italy, 2009, 439.CrossRefGoogle Scholar
[11]Jardel, O.; De Groote, F.; Charbonniaud, C. et al. : A drain-lag model for AlGaN/GaN Power HEMTs, in Proc. Int. Microwave Symp., Honolulu, Hawaii, 2007, 601.CrossRefGoogle Scholar