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MM-wave performance and avalanche noise estimation of hexagonal SiC and GaN IMPATTs for D-band applications

Published online by Cambridge University Press:  01 May 2012

Pravash R. Tripathy ,
Moumita Mukherjee  and
Shankar P. Pati
Pravash R. Tripathy*
Affiliation:
Purushottam Institute of Engineering & Technology, Rourkela, Odisha, India. Phone: +91 9437346463.
Moumita Mukherjee
Affiliation:
Centre for Millimeter-Wave Semiconductor devices and Systems (CMSDS), Institute of Radio Physics & Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Kolkata 700009, West Bengal, India.
Shankar P. Pati
Affiliation:
National Institute of Science & Technology, Berhampur, Odisha, India.
*
Corresponding author: P. R. Tripathy Email: pravashrt76@yahoo.co.in
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Abstract

The mm-wave as well as avalanche noise properties of IMPATT diode at D-band are efficiently estimated, with different poly-types of silicon carbide (SiC) and GaN as base materials, using advanced computer simulation techniques developed by the authors. The breakdown voltage of 4H-SiC (180 V) is more than the same for 6H-SiC, ZB- and Wz-GaN-based diode of 170,158, and 160 V, respectively. Similarly, the efficiency (14.7%) is also high in the case of 4H-SiC as compared with 6H-SiC and GaN-based diode. The study indicates that 4H-SiC IMPATT diode is capable of generating high RF power of about 8.38 W as compared with GaN IMPATT diode due to high breakdown voltage and negative resistance for the same frequency of operation. It is also observed that Wz-GaN exhibits better noise behavior 7.4 × 10−16 V2 s than SiC (5.16 × 10−15 V2 s) for IMPATT operation at 140 GHz. A comparison between the power output and noise from both the device reveals that Wz-GaN would be a suitable base material for high-power application of IMPATT diode with moderate noise.

Keywords

Avalanche noiseGallium nitrideIMPATTRF powerSilicon carbideMm-wave window frequency
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Issue 4 , August 2012 , pp. 473 - 481
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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