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Performance study of an inverse class E power amplifier with series tunable parallel resonant tank

Published online by Cambridge University Press:  25 March 2011

Tao Cao ,
Songbai He  and
Fei You
Tao Cao*
Affiliation:
Institute of Electronic Engineering, China Academy of Engineering Physics, Sub-Box 517 of P.O. Box 919, Mianyang, Sichuan, P.R. China. Phone: +86 816 2493651
Songbai He
Affiliation:
School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan, P.R. China
Fei You
Affiliation:
School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan, P.R. China
*
Corresponding author: T. Cao Email: caotaog@gmail.com
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Abstract

An analysis of operation of a modified inverse class E power amplifier is presented. The proposed amplifier that has a series tunable parallel resonant tank is similar to a hybrid of class F and inverse class E. The principles and design equations required to determine the optimum operation of the amplifier are analyzed in detail. The practical circuit using LDMOS MRF21010 is shown to be able to deliver 40.02 dBm outpout power at 155 MHz. The amplifier achieves power-added efficiency (PAE) of 78.18% and drain efficiency of 78.42%, and exhibits 25.02 dB power gain when operates from a 21 V supply voltage. Comparisons of simulated and measured results are given with good agreement between them being achieved.

Keywords

Inverse class E amplifierclass Fzero current switchinghigh efficiency
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Issue 4 , August 2011 , pp. 405 - 413
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

REFERENCES

[1]Huttunen, A.; Kaunisto, R.: A 20-W Chireix outphasing transmitter for WCDMA base stations. IEEE Trans. Microw. Theory Tech., 55 (2007), 2709–2718.CrossRefGoogle Scholar
[2]Diet, A.; Berland, C.; Villegas, M.; Baudoin, G.: EER architecture specifications for OFDM transmitter using a class E amplifier. IEEE Microw. Wirel. Compon. Lett., 14 (2004), 389–391.CrossRefGoogle Scholar
[3]Pedro, J.C.; Garcia, J.A., Cabral, P.M.: Nonlinear distortion analysis of polar transmitters. IEEE Trans. Microw. Theory Tech., 55 (2007), 2757–2765.CrossRefGoogle Scholar
[4]Sokal, N.O.; Sokal, A.D.: Class E – a new class of high efficiency tuned single-ended switching power amplifiers. IEEE J. Solid-State Circuits, SSC-10 (1975), 168–176.Google Scholar
[5]You, F.; He, S.B.; Cao, T.; Tang, X.H.: Class E power amplifier design with a modified load network, in 2008 Int. Conf. on Microwave and Millimeter Wave Technology Proc., Nanjing, China, 2008.Google Scholar
[6]You, F.; He, S.B.; Tang, X.H.; Cao, T.: Performance study of a class-E power amplifier with tuned series-parallel resonance network. IEEE Trans. Microw. Theory Tech., 56 (2008), 2190–2200.Google Scholar
[7]Raab, F.H.: Class-F power amplifiers with maximally flat waveforms. IEEE Trans. Microw. Theory Tech., 45 (1997), 2007–2012.Google Scholar
[8]Wei, C.J. et al. : Analysis and experimental waveform study of inverse class-F mode of microwave power FET's, in IEEE MTT-S Int. Microwave Symp., Boston, 2000.Google Scholar
[9]Inoue, A. et al. : Analysis of class-F and inverse class-F amplifiers, in IEEE MTT-S Int. Microwave Symp., Boston, 2000.Google Scholar
[10]Kee, S.D.; Aoki, I.; Rutledge, D.: 7-MHz, 1.1-kW demonstration of the new E/F(2,odd) switching amplifier class E, in IEEE MTT-S Int. Microwave Symp., Phoenix Arizona, 2001.Google Scholar
[11]Kee, S.: The Class E/F Family of Harmonic-tuned Switching Power Amplifiers, Ph.D. Dissertation Abstracts International, California Institute of Technology, Pasadena, CA, 2001.Google Scholar
[12]Kee, S.; Aoki, I.; Hajimiri, A.; Rutledge, D.: The class E/F family of ZVS switching amplifiers. IEEE Trans. Microw. Theory Tech., 51 (2003), 1677–1690.CrossRefGoogle Scholar
[13]Kee, S.D.; Aoki, I.; Hajimiri, S.-A.; Rutledge, D.B.: Class E/F Switching Power Amplifiers, U.S. Patent 6,724,255, 2004.Google Scholar
[14]Grebennikov, A.: High-efficiency class FE tuned power amplifiers. IEEE Trans. Circuits Syst. I: Regul. Pap., 55 (2008), 3284–3292.Google Scholar
[15]Mury, T.; Fusco, V.F.: Series-L/parallel-tuned versus shunt-C/series-tuned class-E power amplifier comparison. IEE Proc., Circuits Devices Syst., 52 (2005), 709–717.Google Scholar
[16]Mury, T.; Fusco, V.F.: Analysis of the effect of finite DC blocking capacitance and finite DC feed inductance on the performance of inverse class E amplifiers. IEE Proc., Circuits Devices Syst, 153 (2006), 129–135.CrossRefGoogle Scholar
[17]Mury, T.; Fusco, V.F.: Transmission line matching effects on the performance of shunt-C/series-tuned and series-L/parallel-tuned class- E amplifiers, in Asia-Pacific Microwave Conf., Suzhou, China, 2005.CrossRefGoogle Scholar
[18]Mury, T.; Fusco, V.F.: Inverse class-E amplifier with transmission-line harmonic suppression. IEEE Trans. Circuits Syst. I, Regul. Pap., 54 (2007), 1555–1561.Google Scholar
[19]Mihai, A.: RF Power Amplifiers, Noble publication Corporation, Atlanta, 2001.Google Scholar