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RF-MEMS multi-mode-matching networks for GaN power transistors

Published online by Cambridge University Press:  01 April 2014

Sascha A. Figur ,
Friedbert van Raay ,
Rüdiger Quay ,
Larissa Vietzorreck  and
Volker Ziegler
Sascha A. Figur*
Affiliation:
EADS Innovation Works, München, Germany. Phone: +49 89 60729054
Friedbert van Raay
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics (IAF), Freiburg, Germany
Rüdiger Quay
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics (IAF), Freiburg, Germany
Larissa Vietzorreck
Affiliation:
Technische Universität München, Lehrstuhl für Hochfrequenztechnik, München, Germany
Volker Ziegler
Affiliation:
EADS Innovation Works, München, Germany. Phone: +49 89 60729054
*
Corresponding author: S.A. Figur Email: sascha.figur@eads.net
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Abstract

This work presents radio-frequency-microelectromechanical-system (RF-MEMS)-based tunable input- and output-matching networks for a multi-band gallium nitride (GaN) power-amplifier applications. In the first part, circuit designs are shown and characterized for a fixed operation mode of the transistor, i.e. either a maximum-output-power- or a maximum-power-added-efficiency (PAE)-mode, which are finally combined into a multi-mode-matching network (M3N); the M3N allows to tune the operation mode of the transistor independently of its operational frequency. The matching networks are designed to provide optimum matching for the power amplifier at three to six different operating frequencies for maximum-output-power- and maximum-PAE-mode. In the frequency range from 3.5 to 8.5 GHz, return losses of 10 dB and higher were measured and insertion losses of 0.5–1.9 dB were demonstrated for the output-matching networks. Further characterizations were performed to test the dependency on the RF-input power, and no changes were observed up to power levels of 34 dBm when cold-switched.

Keywords

Si-based Devices and IC TechnologiesRF-MEMS and MOEMS
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 6 , Issue 5: MEMSWAVE Symposium 2013 , October 2014 , pp. 447 - 458
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2014 

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