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SIP antenna on 0.13 µm SiGe technology at 79 GHz for SRR automotive radar
Published online by Cambridge University Press: 18 January 2010
Abstract
This paper describes the analysis and the design of an integrated antenna on 0.13 µm SiGe BICMOS technology. A non-resonant dipole antenna integrated on SiGe is electromagnetically coupled to a radiating element reported on a printed circuit board (PCB) substrate. This integrated solution, also compatible with system in package (SIP) concept, provides significant improvements with respect to direct System On Chip (SoC) integration. The main objective of this SIP antenna lies on the optimization of integrated millimeter wave front-ends modules, considering the immediate antenna environment (especially the lossy substrate and technological dielectric/metallic levels), in order to achieve performances compatible with short range radar specifications at 79–81 GHz. One solution, using a RT/Rogers Duroid 6006 PCB (er = 6, thickness h = 127 µm), is presented, providing a 2.93 dBi gain, and 45% radiation efficiency antenna.
Keywords
- Type
- Original Article
- Information
- International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 6: 2009 National Microwave Days in France , December 2009 , pp. 529 - 536
- Copyright
- Copyright © Cambridge University Press and the European Microwave Association 2010