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Small- and large-signal modeling of InP HBTs in transferred-substrate technology

Published online by Cambridge University Press:  11 March 2014

Tom K. Johansen ,
Matthias Rudolph ,
Thomas Jensen ,
Tomas Kraemer ,
Nils Weimann ,
Frank Schnieder ,
Viktor Krozer  and
Wolfgang Heinrich
Tom K. Johansen*
Affiliation:
Department of Electrical Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark
Matthias Rudolph
Affiliation:
Brandenburg University of Technology, D-03046 Cottbus, Germany Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Thomas Jensen
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Tomas Kraemer
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Nils Weimann
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Frank Schnieder
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Viktor Krozer
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Wolfgang Heinrich
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
*
Corresponding author: T. K. Johansen; Email: tkj@elektro.dtu.dk
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Abstract

In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a direct parameter extraction methodology dedicated to III–V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies.

Keywords

ModelingSimulation and characterization of devices and circuitsLinear and non-linear CAD Techniques
Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 6 , Issue 3-4: European Microwave Week 2013 , June 2014 , pp. 243 - 251
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2014 

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References

REFERENCES

[1]Jensen, T.; Kraemer, T.; Al-Sawaf, T.; Krozer, V.; Heinrich, W.; Traenkle, G.: Multifinger InP HBT's in transferred-substrate technology for 100 GHz power amplifiers, in 7th European Microwave Integrated Circuits Conf., Amsterdam, The Netherlands, 2012.Google Scholar
[2]Scott, D.W.; Monier, C.; Wang, S.; Radisic, V.; Nguyen, P.; Cavus, A.; Deal, W.R.; G.-Aitken, A.: InP HBT transferred to higher thermal conductivity substrate. IEEE Trans. Electron Device Lett., 33 (2012), 507–509.Google Scholar
[3]Camnitz, L.H.; Moll, N.: An analysis of the cutoff-frequency behavior of microwave heterojunction bipolar transistors, in Compound Semiconductor Transistors, Tiwari, S. (ed.), Physics and Technology, IEEE Press, pp. 21–46, 1993.Google Scholar
[4]Rudolph, M.: Introduction to Modeling HBTs, Artech House, Norwood, MA, 2006.Google Scholar
[5]Degachi, L.; Ghannouchi, F.M.: An augmented small-signal HBT model with its analytical based parameter extraction technique. IEEE Trans. Electron Devices, 55 (2008), 968–972.CrossRefGoogle Scholar
[6]Gobert, Y.; Tasker, P.J.; Bachem, K.H.: A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor. IEEE Trans. Microw. Theory Tech., 45 (1997), 149–153.Google Scholar
[7]Johansen, T.K.; Krozer, V.; Nodjiadjim, V.; Konczykowska, A.; Dupuy, J.-Y.; Riet, M.: Improved extrinsic base resistance extraction for submicronmeter InP/InGaAs DHBT models. IEEE Trans. Electron Devices, 58 (2011), 3004–3011.CrossRefGoogle Scholar
[8]Kraemer, T.; Rudolph, M.; Schmueckle, F.J.; Wuerfl, J.; Traenkle, G.: InP DHBT process in transferred-substrate technology with f t and f max over 400 GHz. IEEE Trans. Electron Devices, 56 (2009), 1897–1903.Google Scholar
[9]Johansen, T.K.; Krozer, V.; Hadziabdic, D.; Jiang, C.; Konczykowska, A.; Dupuy, J.-Y.: A novel method for HBT intrinsic collector resistance extraction from S-parameters, in Asia-Pacific Microwave Conf., Bangkok, Thailand, 2007.Google Scholar
[10]Rios, J.M.M.; Lunardi, L.M.; Chandrasekhar, S.; Miyamoto, Y.: A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors, IEEE Trans. Microw. Theory Tech., 45 (1997), 39–45.CrossRefGoogle Scholar
[11]Suh, Y.; Shin, J.-H.; Kim, B.; Heo, D.; Radhavan, A.; Laskar, J.: Direct extraction method for internal equivalent circuit parameters of HBT small-signal hybrid-Π model, in IEEE MTT-S Int. Microwave Symp., 2000.Google Scholar
[12]Horng, T.S.; Wu, J.M.; Huang, H.H.: An extrinsic-inductance independent approach for direct extraction of HBT intrinsic circuit parameters, in IEEE MTT-S Int. Microwave Symp., 2001.Google Scholar
[13]Versleijen, M.P.J.G.: Distributed high frequency effects in bipolar transistors, in Proc. of Bipolar Circuits and Technology Meeting, 1999.Google Scholar