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Vertical displacement detection of an aluminum nitride piezoelectric thin film using capacitance measurements

Published online by Cambridge University Press:  06 March 2009

Mahmoud Al Ahmad  and
Robert Plana
Mahmoud Al Ahmad*
Affiliation:
University of Toulouse, LAAS CNRS, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex 4, France.
Robert Plana
Affiliation:
University of Toulouse, LAAS CNRS, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex 4, France.
*
Corresponding author: M.A. Ahmad E-mail: al-ahmad.mahmoud@ieee.org
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Abstract

Piezoelectric materials have a strong interaction between their mechanical and electrical properties that translates into innovative components and circuits architectures. This work describes an original method using the electromechanical properties of the aluminum nitride (AlN) piezoelectric material to characterize its vertical extension when an electric field is applied. The novel techniques based on measurements of a planar parallel plate AlN capacitor without and with bias employing an impedance analyzer. The parallel plate capacitor theory and piezoelectric material analysis are used to calculate the vertical displacement of the AlN film.

Keywords

Aluminum nitrideCharacterizationsMaterial parametersPiezoelectric material
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Issue 1 , February 2009 , pp. 5 - 9
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

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