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18O study of the oxidation of reactively sputtered Ti1−xAlxN barrier

Published online by Cambridge University Press:  31 January 2011

M. C. Hugon ,
F. Varniere ,
F. Letendu ,
B. Agius ,
I. Vickridge  and
A. I. Kingon
M. C. Hugon
Affiliation:
Laboratoire de Physique des Gaz et des Plasmas, Université de Paris Sud, 91405 Orsay, France
F. Varniere
Affiliation:
Laboratoire Charles Fabry, Université Paris Sud, 91403 Orsay, France
F. Letendu
Affiliation:
Laboratoire de Physique des Gaz et des Plasmas, Université de Paris Sud, 91405 Orsay, France
B. Agius
Affiliation:
Laboratoire de Physique des Gaz et des Plasmas, Université de Paris Sud, 91405 Orsay, France
I. Vickridge
Affiliation:
Groupe de Physique des solides (GPS), Tour 23, Université Paris 6 et 7, 75251 Paris, France
A. I. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina
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Abstract

The preparation of high-permittivity perovskite materials requires high-temperature (550–750 °C) oxidizing environments, providing stringent limitations on the choice of electrode materials. To minimize interdiffusion and oxidation reactions, an electrically conductive diffusion barrier such as Ti1−xAlxN is needed below the electrode material (Pt, IrO2, RuO2…). Ti1−xAlxN films were deposited by multitarget reactive sputtering in a mixture of Ar and N2. The stability of these films has been investigated under typical conditions for crystallization of perovskite dielectrics. Sample composition was characterized using Rutherford backscattering spectroscopy and nuclear reaction analysis. In particular, the concentration depth profiles of both 18O and 27Al were measured before and after RTA treatments via the narrow resonances of 18O(p,α)15N at 151 keV (FWHM = 100 eV) and 27Al(p,γ)28Si at 992 keV (FWHM = 100 eV). The different 18O excitation curves show that the oxidation resistance increases with Al incorporation. The Al excitation curves indicate a uniform Al content for as-deposited TixAl1−xN and reveal Al diffusion to the surface during the oxidation process which indicates the formation of an Al-rich oxide layer at the TixAl1−xN surface, leaving a layer depleted in Al below it.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 9 , September 2001 , pp. 2591 - 2599
Copyright
Copyright © Materials Research Society 2001

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