Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-14T16:47:42.011Z Has data issue: false hasContentIssue false
  • English
  • Français

3C–SiC/Si/3C–SiC epitaxial trilayer films deposited on Si(111) substrates by reactive magnetron sputtering

Published online by Cambridge University Press:  03 March 2011

Q. Wahab ,
L. Hultman ,
I.P. Ivanov ,
M. Willander  and
J-E. Sundgren
Q. Wahab
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
L. Hultman
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
I.P. Ivanov
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
M. Willander
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
J-E. Sundgren
Affiliation:
Department of Physics, Linköping University, S-581 83 Linköping, Sweden
Get access

Abstract

A trilayer epitaxial structure of 3C-SiC/Si/3C-SiC was grown on Si(111) substrate by reactive magnetron sputtering. The layered structure consisted of a 300 nm thick Si layer sandwiched between two 250 nm thick 3C-SiC layers. Cross-sectional transmission electron microscopy (XTEM) showed that all layers were epitaxial to each other. The 3C-SiC layers contained stacking faults and double positioning domains with a high density in the second SiC layer. The Si layer showed the lowest density of planar faults, but developed growth facets. Observation was made of stacking faults propagating from 3C-SiC to Si layer as well as stacking faults originating at the termination of 3C-SiC double positioning boundaries into Si. The termination of Si stacking faults during growth of SiC is also reported.

Type
Rapid Communication
Information
Journal of Materials Research , Volume 10 , Issue 6 , June 1995 , pp. 1349 - 1351
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Wahab, Q., Karlsteen, M., Nur, O., Hultman, L., Willander, M., and Sundgren, J-E., unpublished results.Google Scholar
2Dmitriev, V. A., Irvine, K., and Spencer, M., Appl. Phys. Lett. 64, 318 (1994).CrossRefGoogle Scholar
3Kim, K., Choi, S-D., and Wang, K. L., Thin Solid Films 225, 235 (1993).CrossRefGoogle Scholar
4Nishino, S., Powell, J. A., and Will, H. A., Appl. Phys. Lett. 42, 460 (1983).CrossRefGoogle Scholar
5Powell, J. A., Matus, L. G., and Kuezmarski, M. A., J. Electrochem. Soc. 134, 1558 (1987).CrossRefGoogle Scholar
6Davis, R. F., Thin Solid Films 181, 1 (1989).CrossRefGoogle Scholar
7Motoyoma, S., Morikawa, N., Nasu, M., and Kaneda, S., J. Appl. Phys. 68, 101 (1990).Google Scholar
8Zhou, G. L., Ma, Z., Lin, M. E., Shen, T. C., Allen, L. H., and Morkoc, H., J. Cryst. Growth 134, 167 (1993).Google Scholar
9Yoshinobu, T., Mitsui, H., Tarui, Y., Fuyuki, T., and Matsunami, H., J. Appl. Phys. 72, 2006 (1992).Google Scholar
10Wahab, Q., Hultman, L., Sundgren, J-E., and Willander, M., J. Mater. Sci. Eng. B 11, 61 (1992).Google Scholar
11Wahab, Q., Glass, R. C., Ivanov, I. P., Birch, J., Sundgren, J-E., and Willander, M., J. Appl. Phys. 74, 1663 (1993).Google Scholar
12Wahab, Q., Sardela, M. Jr., Hultman, L., Henry, A., Willander, M., Janzén, E., and Sundgren, J-E., Appl. Phys. Lett. 65, 725 (1994).CrossRefGoogle Scholar
13Wahab, Q., Hultman, L., Ivanov, I. P., Willander, M., and Sundgren, J-E., Thin Solid Films (1995, in press).Google Scholar
14Yoo, W. S. and Matsunami, H., Jpn. J. Appl. Phys. 30, 545 (1991).CrossRefGoogle Scholar