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Aerosol jet fog (ajFOG) deposition of aluminum oxide phosphate thin films from an aqueous fog

Published online by Cambridge University Press:  27 September 2016

Nishit M. Murari ,
Ryan H. Mansergh ,
Yu Huang ,
Matthew G. Kast ,
Douglas A. Keszler  and
John F. Conley Jr.
Nishit M. Murari
Affiliation:
School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331-5501, USA
Ryan H. Mansergh
Affiliation:
Department of Chemistry, Oregon State University, Corvallis, Oregon 97331-4003, USA
Yu Huang
Affiliation:
Department of Chemistry, Oregon State University, Corvallis, Oregon 97331-4003, USA
Matthew G. Kast
Affiliation:
Department of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403-1253, USA
Douglas A. Keszler
Affiliation:
Department of Chemistry, Oregon State University, Corvallis, Oregon 97331-4003, USA
John F. Conley Jr.*
Affiliation:
School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331-5501, USA
*
a) Address all correspondence to this author. e-mail: jconley@eecs.oregonstate.edu
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Abstract

A new lab-based aerosol jet fog (ajFOG) deposition system with an atomizer consisting of two opposing jets located within the deposition chamber is introduced and its capabilities are examined. The unique opposing configuration of the atomizer enables the formation of a highly uniform fog even from low volatility precursors. Aluminum oxide phosphate (AlPO) thin films were deposited onto Si wafers at room temperature and sub-atmospheric pressure by using an aqueous precursor. Films were characterized by spectroscopic ellipsometry, x-ray diffraction and reflectivity, scanning electron microscopy, and metal/oxide/semiconductor (MOS) capacitor electrical measurements. Film thickness uniformity, density, surface roughness, and charge transport mechanisms were found to be comparable to spin-coated thin films deposited using the same precursor, demonstrating the effectiveness of this aerosol technique. A process model was developed to predict film thickness as a function of precursor concentration, exposure time, fog settling time, and number of exposures.

Keywords

thin filmspray depositionenvironmentally benign
Type
Articles
Information
Journal of Materials Research , Volume 31 , Issue 21 , 14 November 2016 , pp. 3303 - 3312
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Copyright
Copyright © Materials Research Society 2016 

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Footnotes

Contributing Editor: Gary L. Messing

References

REFERENCES

Miikkulainen, V., Leskela, M., Ritala, M., and Puurunen, R.L.: Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trend. J. Appl. Phys. 113, 021301 (2013).Google Scholar
Niesen, T.P. and De Guire, M.R.: Review: Deposition of ceramic thin films at low temperatures from aqueous solution. Solid State Ionics 151, 61 (2002).CrossRefGoogle Scholar
Kast, M.G., Enman, L.J., Gurnon, N.J., Nadarajah, A., and Boettcher, S.: Solution-deposited F: SnO2/TiO2 as a base-stable protective layer and antireflective coating for microtextured buried-junction H2-evolving Si photocathodes. ACS Appl. Mater. Interfaces 6, 22830 (2014).Google Scholar
Norrman, K., Siahkali, A.G., and Larsen, N.B: Studies of spin coated polymer films. Annu. Rep. Prog. Chem, Sect. C. 101, 174 (2005).CrossRefGoogle Scholar
Singh, V.K., Sasaki, M., Song, J.H., and Hane, K.: Techniques for preparing defect-free spray coated resist films on three-dimension micro-electromechanical systems. Jpn. J. Appl. Phys. 44, 2016 (2005).Google Scholar
Golego, N., Studenikin, S.A., and Cocivera, M.: Properties of dielectric BaTiO3 thin films prepared by spray pyrolysis. Chem. Mater. 10, 2000 (1998).Google Scholar
Kawaharamura, T., Uchida, T., Sanada, M., and Furuta, M.: Growth and electrical properties of AlO x grown by mist chemical vapor deposition. AIP Adv. 3, 032135 (2013).Google Scholar
Huffman, M.: Liquid source misted chemical deposition (LSMCD)—A critical review. Integr. Ferroelectr. 10, 39 (1995).CrossRefGoogle Scholar
Piao, J., Katori, S., Kawaharamura, T., Li, C., and Fujita, S.: Fabrication of silicon oxide thin films by mist chemical vapor deposition method from polysilazane and ozone as source. Jpn. J. Appl. Phys. 51, 090201 (2012).CrossRefGoogle Scholar
Akaiwa, K. and Fujita, S.: Electrical conductive corundum-structured α-Ga2O3 thin films on sapphire with tin-doping grown by spray-assisted mist chemical vapor deposition. Jpn. J. Appl. Phys. 51, 070203 (2012).Google Scholar
Chung, H.J., Choi, J.H., Lee, J.Y., and Woo, S.I.: Preparation and electrical properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition. Thin Solid Film 382, 106 (2001).Google Scholar
Rothon, R.N.: Solution-deposited metal phosphate coatings. Thin Solid Films 77, 149 (1981).Google Scholar
Meyers, S.T., Anderson, T.J., Hong, D., Hung, C.M., Wager, J.F., and Keszler, D.A.: Solution-processed aluminum oxide phosphatez thin-film dielectrics. Chem. Mater. 19, 4023 (2007).Google Scholar
Dobbelaere, T., Roy, A.K., Vereecken, P., and Detavernier, C.: Atomic layer deposition of aluminum phosphate based on the plasma polymerization of trimethyl phosphate. Chem. Mater. 26, 6863 (2014).Google Scholar
De Gennes, P.G.: Wetting: Statics and dynamics. Rev. Mod. Phys. 57, 827 (1985).Google Scholar
Tanner, L.H.: The spreading of silicone oil drops on horizontal surfaces. J. Phys. D.: Appl. Phys. 12, 1473 (1979).Google Scholar
Cormier, S.L., McGraw, J.D., Salez, T., Raphaël, E., and Dalnoki-Veress, K.: Beyond Tanner's law: Crossover between spreading regimes of a viscous droplet on an identical film. Phys. Rev. Lett. 109, 154501 (2012).Google Scholar
Bonn, D., Eggers, J., Indekeu, J., Meunier, J., and Rolley, E.: Wetting and spreading. Rev. Mod. Phys. 81, 739 (2009).Google Scholar
Rigaku. PDXL: Integrated X-ray Powder Diffraction Software (Rigaku Corporation, Tokyo, Japan, 2010).Google Scholar
Bruker: NanoScope Analysis (Bruker Corporation, Billerica, MA, 2013).Google Scholar
Schroeder, D.K.: Semiconductor Material, and Device Characterization, 3rd ed. (John Wiley & Sons, Hoboken, NJ, 2005); p. 328.Google Scholar
Alemayehu, M., Davis, J.E., Jackson, M., Lessig, B., Smith, L., Sumega, J.D., Knutson, C., Beekman, M., Johnson, D.C., and Keszler, D.A.: Tunable dielectric thin films by aqueous, inorganic solution-based processing. Solid State Sci. 13, 2037 (2011).Google Scholar
Jiang, K.. Meyers, S.T., Anderson, M.D., Johnson, D.C., and Keszler, D.A.: Functional ultrathin films and nanolaminates from aqueous solutions. Chem. Mater. 25, 210 (2013).Google Scholar
Smith, S.W., Wang, W., Keszler, D.A., and Conley, J.F. Jr.: Solution based prompt inorganic condensation and atomic layer deposition of Al2O3 films: A side-by-side comparison. J. Vac. Sci. Technol., A 32, 041501 (2014).CrossRefGoogle Scholar
Anderson, J.T., Wang, W., Jiang, K., Gustafsson, T., Xu, C., Gafunkel, E.L., and Keszler, D.A.: Chemically amplified dehydration of thin oxide films. ACS Sustainable Chem. Eng. 3, 1081 (2015).Google Scholar
Wang, W.: Ph.D. Dissertation, “Synthesis and characterizations of Aluminum Oxide Based Materials – from Molecules to Devices,” Oregon State University, Corvallis, 2013.Google Scholar
Frenkel, J.: On pre-breakdown phenomena in insulators and electronic semi-conductors. Phys. Rev. 54, 647 (1938).CrossRefGoogle Scholar
Jeong, D.S., Park, H.B., and Hwang, C.S.: Reasons for obtaining an optical dielectric constant from the Poole–Frenkel conduction behavior of atomic-layer-deposited HfO2 films. Appl. Phys. Lett. 86, 072903 (2005).Google Scholar
Alimardani, N., King, S.W., French, B.L., Tan, C., Lampert, B.P., and Conley, J.F. Jr.: Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes. J. Appl. Phys. 116, 024508 (2014).Google Scholar
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